TOSHIBA TC74HCU04AP/AF/AEN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HCU04AP, TC74HCU04AF, TC74HCU04AFN HEX INVERTER (Note) The JEDEC SOP (FX) is not available in Japan, The TC74HCUO4A is a high speed CMOS INVERTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. Since the internal cireit is composed of a single stage inverter, it ean be used in analog applications such as erystal osellators All inputs are equipped with protection circuits against static discharge or transient excess voltage. FEATURES: «+ High Speed: + Low Power Dissipation P(1P14-P-300-2.54) Weight : 0.969 (Typ.) Ngee 1 FN (SOL14-150-1.27) Weight : 0.129 Typ.) F(S0P14-7-300-1.27) ‘Weight 0.189 (Typ.) PIN ASSIGNMENT + High Noise Immunity Vout }0%Vo (Min.) + Output Drive Capability 10 LSTTL Loads 1A 4 14 Vec ‘+ Symmetrical Output Impedance~-| lon | =lo. = 4mA(Min.) v2 13 6A + Balanced Propagation Delays-~~ty.n™ v4 + Wide Operating Voltage Range- Voo(opr.) = 2V~6V 2A 3 12 6Y + Pin and Function Compatible with 74L804 ay 4 [] 11 5a ast YH sv BY 6 f}9 4a ow 7] he av (TOP VIEW) IEC LOGIC SYMBOL TRUTH TABLE 1A 20 a Y EN L 4 an 5A H i 6a 2001-05-17TOSHIBA TC74HCUO4AP/AF/AEN ABSOLUTE MAXIMUM RATINGS PARAMETER srMeoL VALUE TNT] oom in the range of Ta= Supply Voltage Range | Vec =05~7 Vv] ~40°C~65°C. Prom 'Ta= 65°C “eVect w 85°C a derating factor of DC Input Voltage Vin O5~Vec¥05 WV] © B8-Gn decating fasor of DE Output Voltage Vour | = 0.5~Vee ¥0.5 Vv] antl suum’ Input Diode Current he £20 mA Output Diode Current | loc £20 mA DC Output Current Tour £25 mA DE Vec/Ground Current_| lec £50 mA Power Dissipation Po | _500(D1)*/ 180 (SOP) _|_mwW Storage Temperature Tata =65~150 *c RECOMMENDED OPERATING CONDITIONS PARAMETER SyMBOL VALUE ONT Supply Voltage Vec 2-6 v input Voltage Vin O=Vec v Output Voltage Vour O=Vec v Operating Temperature | Tope =40=85 °C DC ELECTRICAL CHARACTERISTICS PARAMETER — |symao.| ‘TEST CONDITION Voc p78 25° _{Ta 5 40-85° sr (4 [win [ Tye. [max. | MIN. [MAX. 2017 | - | - wz] — High - Level zfs = Input Voltage Min 43 | 38 = /38) 24% 20) - | — [oa | — | oa Low-Level =] = Input Voltage Me eyo] 2 p83) 2 yee yy 20/18 |20 | - [19 | — sigh evel VneVi flon=-20a | 45] a0 | 45 | — Jaa | = Gutputvorage | Yon meet stein = feat = Min=GNO |ign=—5.2ma| 60| 568 | 580 | — | 563 | — 20; - |oo |o2 | — | oz Low-Level Vw=Vin floc=200a | 45] — Joo |os | — | os Output Voltage Vo. £0 or | 05 os |v Vacva lim=4.ma [45] — | 017] 026| — |o33 in=Vec_|igtss2ma__|60| — | 018 | 026| — | 033 input Leakage Current | tn Vin=Vec or GND 60] — | — [#01] — [#10 QuiescentSupply Current_| Ice Vin=Vec or GND. 60; - | - | 10 | - | 0] 2001-05-17TOSHIBA TC74HCUO4AP/AF/AEN ‘AC ELECTRICAL CHARACTERISTICS ( C, = 15pF, Vec= 5V, Ta=25°C, Input t,=ty=6ns) PARAMETER syiwot] TEST CONDITION MIN. Tye. | MAX. [UNIT] Output Transition Time ow - 4 8 ns Propagation Delay Time | fi" - 4 8 ‘AC ELECTRICAL CHARACTERISTICS (C, = 50pF, Input t,=t;=6ns) Taz2ec _[Ta==40-85C PARAMETER syaot | TEST CONDITION ast aN AT MCT UN t 20, - | 3% | 7B] - | % Output Transition Time on 45 | — 8 | i | - | 19 a eo | - | 71/3 )]-|we) : 20, = [we ye >= a Propagation Delay Time ous 45 _ 12 _ 15 pes ¥ tom 6.0 = 5 10. = 13, Input Capacitance Cw = 9 [15 | — 15 . Power Dissipation Capacitance | Cro(1) =[s |---|? Note (1) Cpp is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation : lec (Opt) =Coo * Vec * fin + lec! 6( per Gate) 2001-05-17