TOSHIBA TC74HC32AP/AF/AEN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC32AP, TC74HC32AF, TC74HC32AFN (Note) The JEDEC SOP (FX) is not available in QUAD 2-INPUT OR GATE Japan. The TCT4HC32A is a high speed CMOS 2-INPUT OR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. ‘The internal cireuit is composed of 2 stages including buffer i “de high noice tmmuni P(01P14.9.300-258) output, which provide high noise immunity and stable output. Weight 0.969 Typ.) All inputs are equipped with protection circuits against static discharge or transient excess voltage. FEATURES: F(S0P14-P-300-1.27) FN (SOL147-150-1.27) + High Speed =6ns (typ.) at Voo=5V Weight: 0.189 Typ.) Weight :0.129 (Typ) + Low Power Dissipation: PIN_ASSIGNMENT + High Noise Immunity-~ “ees * wai Ch [114 Vee + Output Drive Capability 10 LSTTL Loads 1B 2 13 48 + Symmetrical Output Impedance~-| loy | = lo. = 4mA (min.) v3 124A + Balanced Propagation Delays-~-tpun=tpit 2a 4 Th {] 11 4y + Wide Operating Voltage Range~-Voc (opr.) = 2V~6V 285 10 38 + Pin and Function Compatible with 74L832 2v 6 9 3A GND 7 8 3Y (TOP VIEW) IEC LOGIC SYMBOL TRUTH TABLE a, 1a o is 2 ‘ A] ® ]Y a» —@ © 3 Lo 2 Hw] A | A @ ctw fA 3 “9, 8 sy an 2 H ek 4A 03) oy = ao t t 7 2001-05-17TOSHIBA ABSOLUTE MAXIMUM RATINGS TC74HC32AP/AF/AEN *500mW in the range of Ta= = 40°C~65°C. From’Ta=65°C te 83°C a derating factor of =10mW/*C shall be applied until 300mW. PARAMETER syMBor VALUE UNIT Supply Voltage Range Vec =05-7 Vv DC Input Voltage Vin =O5~Vec+05 Vv DC Output Voltage Vour =0.5~Vee +05 Vv Input Diode Current on #20 mA Output Diode Current lox £20 mA DC Output Current Tour £25 mA DC Vec/Ground Current | lec £50 mA Power Dissipation Po__| _500(DIP)*/180(S0P)_[_mW. Storage Temperature Tag =65~150 e RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL VALUE UNIT Supply Voltage Vec v Input Voltage Vin Vv Output Voltage Vour Vv Operating Temperature _ | Topr *¢ Input Rise and Fall Time | t,, ty ns DC ELECTRICAL CHARACTERISTICS PARAMETER — |symao.| ‘TEST CONDITION Vee unr [min [ Tye. [wax. | MIN. [MAX. 20} 150) - | — | 150] — High - Level =] = fighter, | as) 338 | = 3] = | v 20) — | — | oso] — | 050 Low-Level Me as] = | = [135] = | 13s] v Input Voltage a8] = | = [483] = | 138 woe [HIB TE | = 1B High - Level Vin fons 2008 = = v hn 60/59 | 60 59 v Output Voltage ow | Vitor ut Voltag Mworvic [yaaa ma] 45) 418 | 431 a3] ige—5.2ma| 60| See | 580 | — | 563 | — 2» a] = [oo joa | = [84 lo = 2028 = 1} = |on Low-Level Vine = Output Voltage Vo | Yimorvi. se oo {tt oY Tosd_ma | 45] — | 0.17 | 026 0.33 =52ma_|60| — | ore | 026 | — | 033 input Leakage Covent | Vin=Vec or GND 60] — | — [#01] — [#10 QuiescentSupply Current_| Ice Vin=Vec or GND. 60; - | - | 10 | - | 0] 2001-05-17TOSHIBA TC74HC32AP/AF/AEN [AC ELECTRICAL CHARACTERISTICS (C,=15pF, Vec= 5V, Ta= 25°C, Input t= t= 6ns) PARAMETER SYMBOL TEST CONDITION MIN. TP. max. [UNIT true Output Transition Time | - 4 8 : ns Propagation Delay Time | 7." - 6 R ‘AC ELECTRICAL CHARACTERISTICS (C. = 50pF, Input t.= t= 6ns) Ta=25 __|Ta=—40-85 PARAMETER srmaot | TEST CONDITION 6h aa Tse MAIC T BAT a LUN te 20) - | 3 | 7) —- | 95 Output Transition Time we as|- | 7 | as | = | 19 nL 6o| - | 6 | 3 | - | 6 |, zo) = ae [as T= | 8 Propagation Delay Time us as | - | “s | a5 | - | 1 pes ¥ tom eo | - | 7 | 13 | = | 6 Input Capacitance Gu = [os [0 [= Po J Power Dissipation Capacitance | Cro (1) =[aryT-T-T- 1? Note (1) Cpp is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation : lec (Opt) =Cpp * Vec fivtlec/ 4 (per Gate) 2001-05-17