TOSHIBA TC74HC10AP/AF/AEN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC10AP, TC74HC10AF, TC74HC10AFN TRIPLE 3-INPUT NAND GATE (Note) The JEDEC SOP (FX) is not available in Japan, ‘The TCTAHCI0A is a high speed CMOS 3-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. ‘The internal circuit is composed of 8 stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. FEATURES ‘+ High Speed Z = 6nsttyp.) at Voc = 5V loo = 1wA(Max.) at Ta= 25°C + Low Power Dissipation. + High Noise Immunity-~ = 28% Voc (Min.) ( DIP14-P-300-2.54) Weight 0.969 (Typ.) F(SoPt4-P-300-1.27) Weight: 0.189 (Typ.) FN (SOL147-150-1.27) Weight 0.129 Typ.) PIN ASSIGNMENT ni a4 1d Vec + Output Drive Capability }0 LSTTL Loads A Hw v 1B 2 f] 13 1¢ + Symmetrical Tmpedance~-| lox | =lo. = 4mA(Mir ‘Symmetrical Output Impedance-| lor | mA(Min.) oA 3 Hew + Balanced Propagation Delays~ tp.=tput 2B 4 Hn 3c + Wide Operating Voltage Range- Vog (opr.) = 2V~6V 2c 5 f} 10 38 + Pin and Funetion Compatible with 74L810 2 6 {]9 30 GND 7 8 3Y (Tor view) IEC LOGIC SYMBOL TRUTH TABLE X: Don’t Care. 2001-05-17TOSHIBA TC74HC10AP/AF/AEN ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT] s500mW in the range of Te= Supply Voltage Range | Vcc =05~7 V_ | =40°C~65°CFrom'Ta =65°C ao5m to 85°C a derating factor of DC Input Voltage Vin O5~Vec+05 v to B5°C a derating factor of DC Output Voltage Vour =0.5~Vec #05 v ‘until 300mW. Input Diode Current oe #20 mA Output Diode Current lox £20 mA DC Output Current Tour £25 mA DC Vec/Ground Current_| cc £50 mA Power Dissipation Po__| 500 (DIP)*/180(S0P)_|_mw. Storage Temperature Tag =65~150 i RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL VALUE UNIT Supply Voltage Vee 2-6 v Input Voltage Vin 0=Vec Vv Output Voltage Vour O-Vee v Operating Temperature | Topr —40~85 *C (0~ 1000 (Vec Input Rise and Fall Time | t, tr | O~ 500(Ve ns O~ 400 (Vee DC ELECTRICAL CHARACTERISTICS PARAMETER _|syaot, TEST CONDITION Vc qo256 UNIT] (W) | min. | tye. [max. | min. [MAx. 20,150] — | — | 150 High - Level Vw 45/315) — | — | 3.15 v Input Voltage a3/333) 2 | = | 38 20] — | — [oso] — | oso tow Level Vi as) - | - | 135] - | 135] v Input Voltage a3] = | = 433) = 148 zo; 19 [20 | — | 19 lon=— 208 | 45] 44 |as | = laa | = High - Level Vive 60/59 |6o0 | — | 59 Vow | Ye v Output Volt norVic put Vortage Vor Tima ma] 45) 418 | 431 a3 lon=—5.2mA | 60| 5.68 | 5.80 | — | 563 | — aoa | a8) — | 00 | on ot Hoy = 20jx8 = 1 | = | on Low-Level Vive = = Output Voltage Vou | vivorvic £0 $0 }o4 oi tv Tas4_ma | 45 0.17 | 0.26 0.33 lou=s2ma_|60| — | o18 | 026| — | 033 input Leakage Current | liv Vin= Vecor GND 6o| — | — [#o1[ — [#10 Quiescent Supply Current_| lec Vin=Vec or GND 60; - | - | 10] - | 0] 2001-05-17TOSHIBA TC74HC10AP/AF/AEN AC ELECTRICAL CHARACTERISTICS ( C. = 15pF, Vec= 5V, Ta= 25°C, Input t-= t= 6ns) PARAMETER [svwao.] __TEST CONDITION min, [ve | MAX. [UNIT tu Output Transition Time | - 4 8 Propagation Delay Time | {" - 6 2 AC ELECTRICAL CHARACTERISTICS (C, = 50pF, Input t, = t= 6ns) Ta=25c PARAMETER syagot | TEST CONDITION apt aN Rv MACY MN Tao UNT t 207 - ~s |e) - | Output Transition Time a 45 | — 7 | 15 | — | 19 Hn 6o| = | 6 | 3 | = | 6 | ns ws 20] — [a7 | 7 | — | 95 Propagation Delay Time t ue 45 _ 9 1S - 19, ot eo|- | s| 3] - | 6 Input Capacitance Cou = 5 | 10 | — 10 | Power Dissipation Capacitance | Cro (1) =[3 T= T-T- 1]? Note (I) Opp is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ec (opr) =Coo * Vec * fin +lec/ 4 ( per Gate) 2001-05-17