TOSHIBA TC74HC125AP/AF/AFN, 126AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC125AP, TC74HC125AF, TC74HC125AFN TC74HC126AP, TC74HC126AF TC74HC125AP/AF/AFN QUAD BUS BUFFER (Note) The JEDEC SOP (FN) is not available in TC74HC126AP/AF QUAD BUS BUFFER Japan. The TC74HC125A/126A are high speed CMOS QUAD BUS BUFFERs fabricated with silicon gate C2MOS technology. ‘They achieve the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The TC74HC125A requires the 3-state control input G to be " ° " P(01PI4-7-3002.58) set high to place the output into the high impedance state, Weight 0.969 Typ.) whereas the TC74HC126A requires the control input to be set low to place the output into high impedance. . All inputs are equipped with protection circuits against static tk discharge or transient excess voltage. “ NN F(SOP14-P.300-127) FN (SOL14-P-150-1.27) FEATURES Weight: 0.189 (Typ.)__ Weight 0.129 Typ.) + High Speed- “tog 10ns(typ.) at Voc=5V PIN ASSIGNMENT + Low Power Dissipation: Ico = 4uA(Max.) at Ta=25°C ; i TevaHCTR5A 1 High Notse Immunity Vn Vat =28% Vor Min) - * output Deive Capabiity----- 18 LSTTL Loads 161 8 Ve + Symmetrical Output Impedance-| lox | 6mA(Min.) 1a 20h 113 4G ¢ Balanced Proj ition Delays toLH= tort opagal ion Delays~ toun=toHt 2 3 12 40 + Wide Operating Voltage Range Voc (opr.) =2V~6V Y {pin and Function Compatible with 7418125/126 4 nay 2a 5 10 3G 6 a 38 co 7 3 av (TOP VIEW) TEC LOGIC SYMBOL revascr26a ic ff 114 vec TevaHc125a rerancr264 a? Fis ac 6 OMS LOy 16 ONES LOLy A ee ia gy ae Lv | xe lm 368 Ory 2s af fi ay 3g Ws @) a ®) 2a 5 {] 10 3G x G [sy 36 av 8 Gast ay 2a (nt) 2 6 9 3A as 3 [dey 49 fe ay —— eno 70] 8 3Y (TOP VIEW) T 2001-05-17TOSHIBA TC74HC125AP/AF/AFN, 126AP/AF TRUTH TABLE TC7AHC1258 TC74HC1268 INPUTS OUTPUTS INPUTS ‘OUTPUTS c A Y 6 A Y H x z t x z L L L 4 L L L 4 H H H H X: Don't Care X: Don't Care 2: High Impedance 2: High Impedance 2Z 2001-05-17TOSHIBA TC74HC125AP/AF/AFN, 126AP/AF ABSOLUTE MAXIMUM RATINGS PARAMETER syMBoL VALUE ONT] «500m in the range of Ta= Supply Voltage Range | Vec =05~7 Vv = 40°C~65°C. From Ta=65°C 05Ver Ww 86°C a derating factor of DC Input Voltage Vin 0.5~Vec +0.5 Vv to Eee gemmting factor of DC Output Voltage Vour =05~Vec +05 Vv] until 300mw’ input Diode Current ix #20 mA ‘Output Diode Current lox £20 mA DC Output Current Tour 235 mA DC Vcc / Ground Current Nee. +75 mA Power Dissipation Po | 500 (DIP}*/180(S0P)_|_mW. ‘Storage Temperature Tstg = 65~150 °C RECOMMENDED OPERATING CONDITIONS PARAMETER SyMa0L VALUE UNIT ‘Supply Voltage Vee 2~6 Vv Input Voltage Vin 0~Vec Vv. ‘Output Voltage Vour O=Vec Vv ‘Operating Temperature | Topr = 40~85 °C O~ 1000 (Vcc: Input Rise and Fall Time | t,, te O~ 500 (Ve ns. 0~ 400 (Vec= DC ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL | TEST CONDITION Vec [ra=—40-85°¢] UNIT W MIN. [MAX 20/150) - | — | 450] — High - Level a = hgdLWSSe Yin ag\ais| — | - | ais) - |v 20[ = 050] — | 050 Low - Level = = Input Voltage Mi é3| = | = | tae] = | 138 | Y tov=—2oa | 49/42 | 29 | = | aa | = High - Level Vin oe" [ed] 55 | 68 5:9 Vou v Otkput Voitage VworVin [a6 ma] 45] 418] 431] — [4a] — lon=—7.8mA | 6.0 | 5.68 | 5.80 = 5.63 = 20/ - |o90 |o1 | - | oa sexsi ve | Yoty, [oc [HB] = [8B BE |S 18 Wy - Lev on | Vn, = = v Output Voltage MnworVn Tze ma | 45] — | 0.17 | 0.26 0.33 It=7ema_| eo] = | 018 | O26 | — | 033 3: State Output Vn=Vyi OF Vi, ~T- fz = Off - State Current loz Vec or GND 60 205 £50 Input Leakage Current tw Vin = Voc or GND eo; — | — |#0a| — [210] “A Quiescent supply Curent | lec Vin=Vec or GND, 6o[ = [= [40 [= [00 2001-05-17