TOSHIBA TC74ACO4P/F/EN/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74AC04P, TC74AC04F, TC74ACO4FN, TC74ACO4FT HEX INVERTER (Note) The JEDEC SOP (FX) is not available in Japan, The TCT4ACO4 is an advanced high speed CMOS INVERTER fabricated with silicon gate and double-layer metal wiring C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. ‘The internal circuit is composed of 8 stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against satic discharge or transient excess voltage. FEATURES: + High Speed + Low Power Dissipation: ty =8.2ns(typ.) at Veo = 5V loo = 4uA(Max.) at Ta=25°C P(0IP14-?.300.2.54) FN (SOL14--150-1.27) ‘Weight : 0.969 (Typ.) Weight: 0.129 (Typ.) ne ee 1 1 F(SOP14-7-300-1.27) FT (TSSOPI47-0084-0 65) Weight: 0.189 Typ.) Weight: 0.06g (ry) PIN ASSIGNMENT ++ High Noise Immunity-~ n= Vn = 28% Voc (Min.) i 4 + Symmetrical Output Impedance--| lo | =lo. = 24mA(Min.) wad 14 Vee Capability of driving 500 ty 2 hy 13 6A Cay of nthY popes ‘+ Wide Operating Voltage Range Vcc (opr) =2V~5.5V a5 q YH 10 sy + Pin and Function Compatible with 74F04 w 6Gh¥ ote a ono 7] Y he av (Tor view) IEC LOGIC SYMBOL TRUTH TABLE 2001-05-17TOSHIBA TC74ACO4P/F/EN/ET ABSOLUTE MAXIMUM RATINGS PARAMETER [svmeor VALUE ONT] sso0m in the range of Ta= Supply Voltage Range Vee =05~70 V_| = 40°C~65°C. From Ta=65°C 5a to 85°C a derating factor of DC input Voltage Vin 05~Vec+ 05 Vv] 2 98'Ca deratingfectorof DE Output Voltage Vour =05~Vec +05 V_] uptosvomw. Input Diode Current ie #20 mA Output Diode Current lox 50 mA, DC Output Current Tour 50 mA, DE VedGround Current tec +150 mA, Power Dissipation Po _|500(DIP}*/180 (SOP/TSSOP)| mW Storage Temperature Tag = 65~150 °C RECOMMENDED OPERATING CONDITIONS PARAMETER. Svwa0L VALUE UNIT Supply Voltage Vec 2.055 v Input Voltage Vin O-Vec v Output Voltage Vour O-Vec v Operating Temperature | Topr =40~85 °C 0~ 100(Vee= 3.320.3V) Input Rise and Fall Time | dt/dv | > "Oo (Wec= SEF 02y) | ns/v DC ELECTRICAL CHARACTERISTICS PARAMETER | symsoL TEST CONDITION ve e225 __fTas —80-85°Cl un [min [7ye. Jwax. | min, [ax. 20] 150 | — 150 | — High Level Vw 0) 210) — 210} — |v Input Voltage 55|385| - | — | 385] - 20| - | — | os0| — | 050 Low “Level Vi 30) - | - | 080) - | 080] v Input Voltage 35| - | = | v65| — | 165 20/19 [20 | - [19 | - low=—S0ea | 30/29 | 30 | - | 29 | = High - Level 4s|4aa [45 | - |4aa | - Output Voltage Vou | ViweVu [=—ama | 30] 258] — | — | 248] — | ~ lon=—24ma | 45] 394] — | — | 330] — lon=—75ma*| 55| — | — | — | 385] — 20 oo [or | — [or laesora | 39) - | oo /o1 | — | or 1 | = [on Low-Level Output Voltage Vo | ViweVin Toetama [30] — | — | 036] — | oaa| ¥ l=2ama | as] = 036 | — | 044 l=7smar_|55| — | — | =| — | 165 inputteskage Curent | lin [Viw=Vec Or GND ss|— [= [eoa[ = [ei Quiescent Supply Current [ec [Vin=Vec or GND ss] — | — | 40; — [400 |“ "This spee indicates the capability of driving 500 transmission ines One output should be tested at a time for a 10ms maximum duration, 2001-05-17TOSHIBA TC74ACO4P/F/EN/ET ‘AC ELECTRICAL CHARACTERISTICS (C.=50pF, R,= 5000, Input t,=t)=3ns) TEST CONDITION Ta= 25°C Tax —40~ 85°C] PARAMETER sria0. Vec(V) | MIN. | Tye. | MAX. | MIN. | MAX tou 3.3403) — 57 98 1.0 11.2 Propagation Delay Time | {tt sotos| — a3} 2b] 1 | 3g | ns Input Capacitance Cw = 5 10 = 10 Power Dissipation Capacitance _| Ceo (i) a a Note (1) Coo is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation : leclopr.) = C po * Vee fin +lec/6( per Gate) 2001-05-17