TOSHIBA TC74HCOOAP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HCOOAP, TC74HCOOAF, TC74HCOOAFN QUAD 2-INPUT NAND GATE (Note) The JEDEC SOP (FX) is not available in Japan, The TCTAHCOOA is a high speed CMOS 2INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. ‘The internal circuit is composed of 8 stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. FEATURES «+ High Speed: tos 6nsttyp.) at Voc =5V + Low Power Dissipation Igo = 1A(Max.) at Ta=25°C + High Noise Immunity + Output Drive Capability + Symmetrical Output Impedance Voit = Vit = 28% Voc (Min.) 10 LSTTL Loads | lon | =lo. =4mA(Min.) ( DIP14-P-300-2.54) Weight 0.969 (Typ.) Ngee 1 F(SoPt4-P-300-1.27) Weight: 0.189 (Typ.) FN (SOL147-150-1.27) Weight 0.129 Typ.) PIN ASSIGNMENT Symmetrical ped A 14 Vee «+ Balanced Propagation Delays tyun= tpi 1B 2 13.48 «+ Wide Operating Voltage Range Voc (opr.) =2V~6V H + Pin and Function Compatible with 74L800 v3 [I 12 40 2A 4 11 ay 2B 5 f] 10 38 2 6 flo 3a ono 7 fs 3y (TOP VIEW) IEC LOGIC SYMBOL TRUTH TABLE Oy Oy ® sy OD gy 2001-05-17TOSHIBA TC74HCOOAP/AF/AEN ABSOLUTE MAXIMUM RATINGS PARAMETER syMBor VAWE ONT] sso0mW in the range of Te= Supply Voltage Range | Vec =05~7 V_| = 40°C~65°C. From Ta=65°C —05~1 to 85°C a derating factor of DC Input Voltage Vin 0.5~Vee +05 Vv 10 ee ee (actor of DC Output Voltage Vour =05~Vec +05 Vv] antilsu0mw: Input Diode Current lie +20 mA ‘Output Diode Current lox £20 mA DC Output Current Tour £25 mA DC Vcc / Ground Current Nee. +50 mA Power Dissipation P| _500(DIF)/180(S0P)_|_ mw. ‘Storage Temperature Tstg = 65~150 °C RECOMMENDED OPERATING CONDITIONS PARAMETER SyMa0L VALUE UNIT ‘Supply Voltage Veo Vv. Input Voltage Vin Vv Output Voltage Vour, Vv Operating Temperature | Topr *€ Input Rise and Fall Time | tr, tr ns DC ELECTRICAL CHARACTERISTICS PARAMETER — |sywpot| ‘TEST CONDITION Vee wa525 uNtT (4 | win. | Tye. | max. | min, | Max. 2.0 | 1.50 _ _ 1.50 _ High - Level Vw 45/315 | — - [35] - |v Input Voltage #3) 238 | = | = | 238] = 20) — - 0.50 0.50 Low - Level Vie 45) = - 1.35 = 135 | V Input Voltage 60] — = 1.80 1.80 20/18 [20 | - [19 | — lon=—200a | 45} aa fas | = | aa | High - Level Vin= 60/59 |60 | ~ |59 | — Vow | YN v Output Volt worVis put Voltage Vor ama ma] 4s) 418 | 431 413 | — lon=—5.2ma | 60 | 568 | 580 | — | 563 | — aoa | a8) — | 00 | on ot lov =20uA = 1 1 Low-Level Vine = = Output Voltage Vou | Vinorvi. £0 $0 }o4 oi tv T=4 mA | 45 0.17 | 026 0.33 l=52ma_| 60 — | 018 | 026 033 Input Leakage Current dn Vin = Vcc or GND 6.0] — = | £01 +10 Quiescent Supply Current dec, Vin = Vcc or GND 60] — = 1.0 = 10.0 HA 2001-05-17TOSHIBA AC ELECTRICAL CHARACTERISTICS ( C. = 15pF, Vec= 5V, Ta= 25°C, Input t-= t= 6ns) TC74HCOOAP/AF/AFN PARAMETER syiMaoL TEST CONDITION. MIN MAX. [UNIT Output Transition Time | - 8 Propagation Delay Time | {" - 2 ‘AC ELECTRICAL CHARACTERISTICS ( C. = 50pF, Input t, -40~85°C | PARAMETER symaot | TEST CONDITION ane fun] ho 20, - | 3 95 Output Transition Time oe as | — 7 19 aH 6.0 = 6 16 | ns * B= | % 3 Propagation Delay Time eH = s fo 60 | — 8 16 Input Capacitance Cau = 5 10 | oF Power Dissipation Capacitance | Coo(1) = [2 =|? Note(1) Cpp is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: lec (opt) = Cop + Vec fin tlcc!4(per Gate) 2001-05-17