TOSHIBA TC7W125FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7W125FU DUAL BUS BUFFER The TC7W125FU is a high speed CMOS DUAL BUS BUFFERS fabricated with silicon gate CMOS technology. It achieve the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The require 3-state control input G to be set high to place the output into the high impedance. All inputs are equipped with protection circuits against static discharge or transient excess voltage, $5076-.0.65 FEATURES Weight : 0.02g (Typ) © High Speed tpd = 10ns (Typ.) at Voc =5V © Low Power Dissipation ==" Ig¢=2uA (Max) at Ta =25°C High Noise Immunity: VIH=VNIL=28% Vcc (Min.) © Output Drive Capability: 15 LSTTL Loads © symmetrical Output Impedance ~~ ioH|=IoL=6mA (Min.) © Balanced Propagation Delays ~~~ tpLH5tpHL © Wide Operating Voltage Range =~ Vcc (opr) =2~6V MARKING MAXIMUM RATINGS VPE NAME PARAMETER SYMBOL VALUE UNIT Lor no. Supply Voltage Range Vec =05-7 Vv W125 DC Input Voltage Vin =05~Vec+05| V ead DC Output Voltage Vout | -05-Vec+05 | V Input Diode Current ik £20 mA (Output Diode Current ToK £20 mA PIN ASSIGNMENT (TOP VIEW) DE Output Current tour 235 mA DC Vec/ Ground Current ee 2375 mA Power Dissipation Pp 300 mW) [Storage Temperature Tstg =65~150__ | °C Lead Temperature (105) TL 260 °C T 2001-05-31TOSHIBA TC7W125FU LOGIC DIAGRAM ‘TRUTH TABLE = UN) INPUTS | OUTPUTS Sas PyL@ y, GTA Y. , 24 2 x Zz L& v2 L L H H X : Don't Care Z : High Impedance RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL VALUE UNIT Supply Voltage Vee 26 Vv Input Voltage Vin O=Vec Vv [Output Voltage Vout O=Vcc Vv [Operating Temperature Toor =40~85 =C 0=1000 (Wee =2.0V) Input Rise and Fall Time tr tf | 0~ 500 (Vec=4.5V) |_ ns 0~ 400 (vec =6.0V) DC ELECTRICAL CHARACTERISTICS Test] Ta=25°C flax -a0mes PARAMETER |SYMBOL|ciR-| TEST CONDITION unit Git Vec | min. | TP. [MAx,| MIN, [MAX. 20; 1s)—]—] 13] — igh-tevel put | yy, | - as }3as} — | — | 315] — | v ‘9 60 | 42] — | — | 42| ~ 20; —|—| 05 05 Howtevel put | yy | _ as | — | — | 135 1.35) Vv oo | — | —| 18| — | 18 20 | 19, 20) — | 19, — pigh-Level viyevin |'OH= "298 | EO | $5 Go| — | s0| — Joutput Vottage | YOH | — Jor vi. = =v Ton=-6mA | 45 [418,431] — | 413] — lou=-78ma | 6.0 | 5.68|580| — | 563] — 20; — | oof oi] — | o7 lor=208 | 45 | — | 00] o1/ — | o1 Low-Level vow | — |vin=vie 60 | — | oo] o1 oa] v [Output Voltage Tor=emA [45 | — [0.17] 0.26] — | 033 lor=7.8ma_| 60 | — | 0.18| 0.26] — | 033 State Output _ Vin oF Vip + + loff-state Current|_!02 Vee or GND 60 | = | = [#05] — | #50 input Leakage =Vec or + current tin | — |Vin=Vec or GND 60} — | — | 201 £10] pA Quiescent Supply =Vec or uiesce lee | — |Vin=Vcc or GND so} —|—|] 20 200TOSHIBA TC7W125FU ‘AC ELECTRICAL CHARACTERISTICS (Input t,=ty=6ns) Git] _conomion _[c_ | Vec | min, [ Tye. [Max.| MIN. [MAX 20] — | 20 60 | — 75 output Transvion| tun | _ solas}—le| alot THL 60 | — 5 10 | — 13, 20] — | 30 | 90] — | 15 sofas|—| a] wl —] 23 Propagation trun | _ 60 | —| | 15|—| 2 ey tine | ee vs0| 45) — | 18 | 26| — | 33 so | —| 2| 2|—| 2] 20] — | 30 | 90] — | 115 so|as| —| 1] | —| 23 parecer | | deen sta fol sli ime ZH = = iso] 45 | — | 14 | 26] — | 33 60 | — | i2| 2| — | 28 20 | — | 24 | 100] — | 125 vrput Obie | tpiz | _ so| as} — | i | '20| — | ‘05 PH 6.0 | — | 10 7 | — 21 input Capacitance| Gy | — = =[—-T=[s,w[— | 0 Output [Capacitance our | — = Pepe] ef] | Power Dissipation [Capacitance cpp — | Note (1) —-}|—-]—-|2]/-]-]- Note (1) : Cpp is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation lec (opr) = CPD-Vec fin +!cc/2 (per Gate)