TOSHIBA TC74HCO4AP/AF/AEN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HCO4AP, TC74HCO4AF, TC74HCO4AFN HEX INVERTER (Note) The JEDEC SOP (FX) is not available in Japan, The TCT4HCO4A is a high speed CMOS INVERTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages, including buffered output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against satic discharge or transient excess voltage. FEATURES: « High Speed: + Low Power Dissipation + High Noise Immunity Vea 28% Vc (Min.) + Output Drive Capability 10 LSTTL Loads + Symmetrical Output Impedance--| lon | =lo. =4mA(Min.) + Balanced Propagation Delays: pun =tpne + Wide Operating Voltage Range~ Voc (opr.) = 2V~6V ( DIP14-P-300-2.54) Weight 0.969 (Typ.) Ngee 1 F(SoPt4-P-300-1.27) Weight: 0.189 (Typ.) FN (SOL147-150-1.27) Weight 0.129 Typ.) PIN ASSIGNMENT 1A 1Y 20 iy ot 13 6A q 12 6y LY 2 2 + Pin and Function Compatible with 74LS04 wad f]11 5a a sf ¥ tio sv a» 6HG¥ te aa oor ¥,te a (TOP VIEW) IEC LOGIC SYMBOL TRUTH TABLE 2001-05-17TOSHIBA TC74HCO4AP/AF/AEN ‘ABSOLUTE MAXIMUM RATINGS PARAMETER SvaMBOL VALUE TNT] «soon in the range of Ta= Supply Voltage Range | Vcc =05~7 Vv] =40°C~65°C. From 'Ta= 65°C —o5er to 85°C a derating factor of DC Input Voltage Vin 05~Vee+05 V_] BBG decaing factor of DC Output Voltage Vour |= 0.5~Vec+0.5 Vv] until som Input Diode Current ic £20 mA Output Diode Current | loc £20 mA DC Output Current lout 225 mA DC Vec/Ground Current | lec £50 mA Power Dissipation Po | _500(01)*/ 180 (SOP) _|_mW Storage Temperature Tata =65~150 *c RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL oNT Supply Voltage Vec v Input Voltage Vw v Output Voltage Vour v Operating Temperature | Tope °C = 1000 (Ve Input Rise and Fall Time | te, ¢ | 0~ 500(Ve ns O= A00(ve DC ELECTRICAL CHARACTERISTICS PARAMETER — |symao.| ‘TEST CONDITION Voc p78 25° _|Ta 5 40-85° sr (4 [win [ Tye. [max. | Min. [MAX. 20/150, — | — | 150] — High - Level =] c = i tee Yi 45] 38 a3] = |v 20, - | = [oso] — | oso Low-Level =f = Input Voltage Me 6o| - | = | ta] = | ta] * aoa |45| aa | a5 aa low = —20A = = OStput Voltage Vow | Yor, £9} 58 | 60 38 v ut Voltag iworvi. =a_ma[ 45] 418] 437 | — [43 te=—5.2ma| 60| 568 | 5a0| — | 563 | — 20, - Joo [or | — [oa lo=20.a | 45} — | oo for | — Jon Ciiput Vonage — | Yo | WME, so} — 109 104 git ut Voltag worn Tama | 45] = | 017 | 026 033 i=52ma_|60| — | ore | 026 | — | 033 input Leakage Curent | tn Vin=Vec or GND 60] — | — [#01] — [#10 Quiescentsupply current_| Ice Vin =Vec or GND 60; - | - | 10 | - | 0] 2001-05-17TOSHIBA TC74HCO4AP/AF/AEN [AC ELECTRICAL CHARACTERISTICS (C,=15pF, Vec= 5V, Ta= 25°C, Input t= t= 6ns) PARAMETER SYMBOL TEST CONDITION MIN. TP. max. [UNIT true Output Transition Time | - 4 8 : ns Propagation Delay Time | 7." - 6 R ‘AC ELECTRICAL CHARACTERISTICS (C, =50pF, Input t,= t= 6ns) Ta=25 __[Ta=~40-85 PARAMETER srmaou | TEST CONDITION Fah an [RPT MC AMIN Mo [NT t 20); - | 0] 5) - | % Output Transition Time we as| - | 8 | 15 | - | 19 an eo| - | 7) 3|- |e), " zo} |e] el= |e Propagation Delay Time us 45 | - 13 | - | 4 pes ¥ toa eo | - | 3] 3 | - | 6 Input Capacitance Gu = [os [wo [= oy, Power Dissipation Capacitance | Cro(1) =e l-;-{- |? ‘Note (I) Cpo is defined as the value of the internal equivalent capacitance which 1s calculated from the operating current consumption without load. Average operating current can be obtained by the equation lec (opr) =Cro * Vee * fin +lec/ 6 (per Gate) 2001-05-17