TOSHIBA TC74HC86AP/AF/AEN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC86AP, TC74HC86AF, TC74HC86AFN QUAD EXCLUSIVE OR GATE (Note) The JEDEC SOP (FX) is not available in Japan, The TCT4HC86A is a high speed CMOS EXCLUSIVE OR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. Input and output buffers are provided which offer high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. FEATURES + High Speed: + Low Power Dissipation: + High Noise Immunity~ + Output Drive Capability ~ toa = 10ns(typ.) at Voo=5V loo = 1#A(Max.) at Ta= 25°C uti = Vn = 28% Voc (Min.) 0 LSTTL Loads P(1P14-P-300-2.54) Weight : 0.969 (Typ.) F(S0P14-7-300-1.27) ‘Weight 0.189 (Typ.) PIN ASSIGNMENT FN (SOL14-150-1.27) Weight : 0.129 Typ.) + Symmetrical Output Impedance-| lon | =lo. = 4mA(Min.) At 14 Vec ‘+ Balanced Propagation Delays~=tp.n=toh L ‘+ Wide Operating Voltage Range-~Voc (opr.) = 2V~6V 1B2 1348 + Pin and Function Compatible with 74886 v3 1 12 44 2a 4 1 ay 285 10 3B 2 6 3A GND 7 3Y (TOP VIEW) IEC LOGIC SYMBOL TRUTH TABLE Oy O oy sy OD gy 2001-05-17TOSHIBA ABSOLUTE MAXIMUM RATINGS TC74HC86AP/AF/AEN PARAMETER srMeoL VALUE TNT] oom in the range of Ta= Supply Voltage Range | Vec =05~7 Vv] ~40°C~65°C. Prom 'Ta= 65°C “eVect w 85°C a derating factor of DC Input Voltage Vin O5~Vec¥05 WV] © B8-Gn decating fasor of DE Output Voltage Vour | = 0.5~Vee ¥0.5 v_] ant auumw' Input Diode Current he £20 mA Output Diode Current | loc £20 mA DC Output Current Tour £25 mA DE Vec/Ground Current_| lec £50 mA Power Dissipation Po | _500(D1)*/ 180 (SOP) _|_mwW Storage Temperature Tata =65~150 *c RECOMMENDED OPERATING CONDITIONS PARAMETER SyMBOL VALUE ONT Supply Voltage Vec v input Voltage Vin v Output Voltage Vour v Operating Temperature | Tope °c Input Rise and Fall Time | te, t ns DC ELECTRICAL CHARACTERISTICS PARAMETER — |symao.| ‘TEST CONDITION Veo Pp —102 25°6 _[To 5 -40-85°C sr [min [ Tye. [wax. | MIN. [MAX. 20} 150) - | — | 150] — High - Level =] = Input Voltage Mw 43/338) = 38 v 20) — | — | oso] — | 050 Low-Level Me a5] = 13s | — | 135 | v Input Voltage 4s} — | — [tas] = | 13s woe [HIB TE | = 1B High-Level Ve low — 201 = = v hn 60/59 | 60 59 v Output Voltage on | WMorvie ut Voltag Mworvic [yaaa ma] 45) 418 | 431 a3] ige—5.2ma| 60| See | 580 | — | 563 | — 2» a] = [oo joa | = [84 lo = 2028 = 1} = |on Low-Level Vine = Output Voltage Vou | ywvorvic < oo es oY Tosd_ma | 45] — | 0.17 | 026 0.33 =52ma_|60| — | ore | 026 | — | 033 input Leakage Current | tn Vin=Vec or GND 60] — | — [#01] — [#10 QuiescentSupply Current_| Ice Vin=Vec or GND. 60; - | - | 10 | - | 0] 2001-05-17TOSHIBA TC74HC86AP/AF/AEN ‘AC ELECTRICAL CHARACTERISTICS ( C, = 15pF, Vec=5V, Ta=25°C, Input t,=t)=6ns ) PARAMETER symao.] TEST CONDITION Max. [UNIT Output Transition Time ow 8 : ns Propagation Delay Time | {" 7 (AC ELECTRICAL CHARACTERISTICS ( C, = 50pF, Input t, = t;= 6ns) Jaze [Ta==40-85°C PARAMETER, symaot | TEST CONDITION nh 85 unr t 30, 95 Output Transition Time vue 45 8 19 tone 6.0 7 16 | is Propagation Delay Time oun 1. pag ¥ tone 6.0 4 21 Input Capacitance Cw 5 10 F Power Dissipation Capacitance | Gro (1) 26 =" Note (1) Crp is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation : fivtlec/4( per Gate) lec (Opt) = Cro Vec 2001-05-17