TOSHIBA TC74HC157, IS8AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC157AP, TC74HC157AF, TC74HC157AFN TC74HC158AP, TC74HC158AF, TC74HC158AFN TC74HC157AP/AF/AFN QUAD 2-CHANNEL MULTIPLEXER TC74HC15BAP/AF/AFN QUAD 2-CHANNEL MULTIPLEXER (INVERTING) (Wote)_The JEDEC SOP (FN) snot avalabe in Japan. ‘The TC74HC157A and TCTAHC158A are high speed CMOS 2-CHANNEL MULTIPLEXERS fabricated with silicon gate C2MOS technology. ‘They achieve the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. »(01P16.9-300-254a) The TC74HC158A is an inverting multiplexer while the Weight: 1.005 Typ) TC74HCIB7A is a non-inverting. ‘When STROBE is held high, selection of data is inhibited ~~ and all the outputs become low in the case of HC157A or| | "MQ gqatl® 8 « high in the case of HC158A. 1 ‘The SELECT decoding determines whether the A or B inputs | | F(sop167.300-1.27) FN (SOLI6.°-150-1.27) get transferred to their corresponding ¥ (¥) outputs. Weight: 0.189 (Typ) Weight :0.139 Typ.) AAll inputs are equipped with protection circuits against static | PIN ASSIGNMENT discharge or transient excess voltage TC7AHCIS7A, FEATURES SELECT 1 16 Vec + High Speed --tpg= 10ns(typ.) at Voc = 5V v2 15 ST + Low Power Dissipation Ico =4uA(Max.) at Ta=25°C 1B 3 14 40 + High Noise Immunity-~ fun = Vout = 28% Voc (Min.) v4 13:48 + Output Drive Capability 0 LSTTL Loads 2a 5 12 ay + Symmetrical Output Impedance-~-| lon | 4mA\(Min.) 2B 6 113A + Balanced Propagation Delays tpun=tpr 27 10 38 + Wide Operating Voltage Range Voc (opr.) = 2V~6V Guo 8 9 av «Pin and Function Compatible with 7418157/158, (TOP view) ‘TRUTH TABLE TCTAHCISBA, INPUTS ‘OUTPUTS SELECT 1 16 Vee ST _ | Seer fy (S7A)]¥ (158A) 1A 2 15 ST H x v H Bw 3 14 an t v v H Wa 13 48 T T Hl T 2A 5 12 4Y T a T Hl 2B 6 11 30 T a a T w7 10 38 Xi Don't care GND 8 9 (Top VIEW) T 2001-05-17TOSHIBA TC74HC157, 1S8AP/AF/AFN IEC LOGIC SYMBOL TCT4HCIS7A TC74HC158A, z 2001-05-17TOSHIBA TC74HC157, 1S8AP/AF/AFN ABSOLUTE MAXIMUM RATINGS PARAMETER srMeoL VALUE TNT] oom in the range of Ta= Supply Voltage Range | Vec =05~7 Vv] ~40°C~65°C. Prom 'Ta= 65°C “eVect w 85°C a derating factor of DC Input Voltage Vin O5~Vec¥05 WV] © B8-Gn decating fasor of DE Output Voltage Vour | = 0.5~Vee ¥0.5 v_] ant auumw' Input Diode Current he £20 mA Output Diode Current | loc £20 mA DC Output Current Tour £25 mA DE Vec/Ground Current_| lec £50 mA Power Dissipation Po | _500(D1)*/ 180 (SOP) _|_mwW Storage Temperature Tata =65~150 *c RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL VALUE ONT Supply Voltage Vee 2-6 v Input Voltage Vin O-Vec v Output Voltage Vour O-Vee v Operating Temperature | Tope =40~85 *¢ = 1000 (Vec Input Rise and Fall Time | te, t¢ | 0~ 500(Ve ns 0~ 400(Vec= DC ELECTRICAL CHARACTERISTICS PARAMETER — |symao.| ‘TEST CONDITION Voc p78 25° _|Ta 5 40-85° sr (4 [win [ Tye. [max. | Min. [MAX. 20; 150) - | — | 150] — High - Level Vie as[aas| — | = [ais] - |v Input Voltage asyais} — | — | sas] - 20) — | — | oso] — | oso Low: Level ve as] = | = [135] = | 13s] v Input Voltage éo| — | = | v0] = | 80 20/19 }20 | - [19 | — love-20a | 45} aa fas | — Jaa | — High - Level Vive 60/59 |60 | - | 59 | - Vou | Yin v Output Volta worVic put Voltage Miwory =a ma] a5] 418 | 431 a3] g2—5.2ma| 60| see | 580 | — | 563 | — 2» a$| = foo jor | = [84 loc = 2028 = 1} = |on Low-Level Vine = Output Voltage Vor | Yiorvic se ao {es oY To=d_ma | 45] — | 0.17 | 026 0.33 i=52ma_|60| — | ore |o26| — | 033 input Leakage Curent | tn Vin=Vec or GND 60] — | — [#01] — [#10 Quiescentsupply current_| Ice Vin =Vec or GND 60] - | - | 40] — | 00] 2001-05-17