TOSHIBA TC74HCO8AP/AF/AEN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HCO8AP, TC74HCO8AF, TC74HCO8AFN QUAD 2-INPUT AND GATE (Note) The JEDEC SOP (FX) is not available in Japan, The TC74HCO8A is a high speed CMOS 2INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. ‘The internal cireuit is composed of 2- stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. FEATURES ‘+ High Speed Z = 6nsttyp.) at Voc = 5V loo = 1wA(Max.) at Ta= 25°C + Low Power Dissipation. + High Noise Immunity-~ uti = Vous = 28% Voc (Min.) ( DIP14-P-300-2.54) Weight 0.969 (Typ.) F(SoPt4-P-300-1.27) Weight: 0.189 (Typ.) FN (SOL147-150-1.27) Weight 0.129 Typ.) PIN ASSIGNMENT + Output Drive Capability - 0 LSTTL Loads wai 14 Vec + Symmetrical Output Impedance lox | =lo.=4mA(Min.) we 2 13 48 v3 12 40 + Balanced Propagation Delays----toy=tpHi fh Wide 0 ‘Volt Re Vi 2V~6V 2A 4 q "ay + Wide Operating Voltage Range~ =2y~ perating Voltage Range-~Vec (opr.) nash 10 38 + Pin and Function Compatible with 74,808 rn 6q 9 3A GND 7 8 3y (TOP VIEW) IEC LOGIC SYMBOL TRUTH TABLE o a) 8 By a @ 2a © a ec * tp pt aa © 3o 110) By ap aa 02 ay H ‘hoy ay 4 [A 2001-05-17TOSHIBA TC74HCO8AP/AF/AEN ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT] 500m in the range of Te= Supply Voltage Range Veo =05-7 v =40°C~65°C. From Ta=65°C 05—Va* to 85°C a derating factor of DC Input Voltage Vin 0.5~Vec +05 v to £5°C a derating factor of DC Output Voltage Vour =0.5=Vec 40.5 v until 300mW. Input Diode Current i #20 mA Output Diode Current tox £20 mA DC Output Current Tour 225) mA DC Vec/Ground Current | lec +50 mA Power Dissipation Po | 500 (DIP}*/180(S0P)_| mW. Storage Temperature Tag =65~150 °C RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL UNIT Supply Voltage Vee v Input Voltage Vin. v Output Voltage Vour Vv Operating Temperature | Topr *c Input Rise and Fall Time | t,, ty ns DC ELECTRICAL CHARACTERISTICS PARAMETER —_|symao1, TEST CONDITION Vc qo25e UNIT] (v)_| MIN. | TyP. 20] 150 | — High - Level = Input Voltage Min 43/338 | = v zo] - | - Low-Level oft Input Voltage Mu ay 2 | 2 v lox=—20a | 45] 4a | 45 low = — 20) ORputvelase | Yor | Yoru $0} 53-| 60 v ‘9 worn Toe 4 ma 45 | 4.18 | 431 Ion=—5.2mA | 6.0 | 5.68 | 5.80 wom [8] = [88 [BE] = [8 Hoy = 20jx8 = 1 | = | or Low-Level Vive Output Voltage Vo. | Visorvic sé os oI jv la=4_maA | 45 0.17 | 026| — | 033 lor=s2ma_|60| — | 018 | 026| — | 033 input Leakage Current | lin Vin= Vecor GND so[ — | = [zo1[ = [ero] Quiescent Supply current_| lee Vin=Vec or GND eo] - | — | 10 | — | w0|” 2001-05-17TOSHIBA AC ELECTRICAL CHARACTERISTICS ( C. = 15pF, Vec= 5V, Ta= 25°C, Input t-= t= 6ns) TC74HCO8AP/AF/AEN PARAMETER syiMaoL TEST CONDITION. MIN uN Output Transition Time | 7 Propagation Delay Time ne - ‘AC ELECTRICAL CHARACTERISTICS (C.=50pF, Input t PARAMETER symaot | TEST CONDITION ane unit] r 20 cry Output Transition Time we 45 7 tree 6.0 6 ns ‘a 2.0 2 Propagation Delay Time aH 45 8 pass ¥ fo 6.0 7 Input Capacitance Cau 5 . Power Dissipation Capacitance | Geo (1) 19 p Note(1) Cpp is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: fin tlcc!4(per Gate) lec (opt) = Cop + Vec 2001-05-17