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1# $alutare $+S
" I diodi sono polari--ati in inversa1 la corrente inversa e3 $+S - $.H 0
dominata dal termine di genera-ione e ricombina-ione
S1 222- transistor ON
q ni < = NO 222- transistor OFF
I78 9 : 2 !?
: @ area della giun-ione
<= @ larghe--a della regione di svuotamento
!? @ tempo di vita medio dei portatori minoritari Se il transistor e: ON:
" I78 raddoppia per un aumento di 1? D EtipicamenteF a # $+S 2 $.H < $ov
temperatura ambiente I78/:9 1? H15 :/!m2 # $ov ! $>SSat
Capacita3 di 7ate
2# $alutare $>S
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S1 222- regione di saturazione
NO 222- regione lineare

5 - 67 8'tobe* 6:; 6<<: ( )(*(23( 04%&56,(278(2997(

A# $a&c(irotto - Note per i1 cor&o di E1ettronica! !a#$%&'&()(*(+'(%ra-.$.%&r(/01

!
! !"#$
!tudio della polarizzazione
di transistor 01! &'()*M,S . /&

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! VD VD "& $ '"
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5 - 27 Octo9er 27: 2;;7 ( )(*(23( 04%&5er(278(2997(


A# $aschirotto - Note per il corso di 3lettronica C"#itolo ) - +l tr"nsistor M01

!"#$
&'()*M,- . /0&1 &22 . 3&
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D
1# $i fa dapprima un.ipotesi di fun3ionamento del transistor
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VDD "# $ %" spento)
"& $ 234"
S '()*+,( -* +.('/0*+,( $ 1
G
B 9# $i risolve la polari33a3ione del circuito congruentemente
con l.ipotesi fatta
D

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S '()*+,( -* +.('/0*+,( $ 1
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B
si deve ripartire con un.altra ipotesi
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$e l.ipotesi e. verificata allora l.ipotesi fatta e. vera e la
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5 - 67 October 6:, 600: ) - 23 0cto5er 789 7338

"# $aschirotto - .ote 0er i1 corso di 31ettronica! !"#$%&'&()(*(+'(%,"-.$.%&,(/01

Polari''a'ione del transistor M/S P"lari''a'i"ne del transist"r ./0


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5 - 67 8cto9er :;< :==; ( )(*(23( 04%&56,(378(3997(


". Baschirotto - Note per il corso di 3lettronica Ca#it&'&(V(-(I'(tran.i.t&r(/0S

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V - 66 October 9:, 900: ( V(-(23( 0ct&5er(289(2008(

A# $%sc(irotto - Note 0er i1 corso 2i 31ettronic%! C"pitolo V * +l t,"nsisto, MO1!

!"#$%&''$'&"()*+)#*t%$(-&-t"%*./0* !olarizzazione del transistor MO0


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5 - 67 8cto9er :;< :==; V * 23 Octo5e, 289 2::8


! "#!$%&'()*+,,+!-!.+,/!0/*!)1!'+*&+!2)!31/,,*+4)'% !"p$%&'&()(*(+'(%,"-.$.%&,(/01

!olari''a'ione +el transistor .O0 Caratteri'tica in+re''o-u'cita


"serci(io *
"serci(io * (,)
+T- . /+
.T0 1 234. 0 . 1m34+1
, 1 25m7
5i disegni la caratteristica <
Quale e< il massimo valore di =s> + per +.@A1+, C+D
? per tenere il transistor C in
satura(ione D
<l transistor se eE acceso eE in satura(ione in GuantoH
+I5 . +J5 K +J5A+T-

La tensione di drain e< data daF Ler +M+T- il transistor eE spento e GuindiH
<.N
.G 1 4. H ,I?
La tensione minima di satura(ione del drain e<F Ler +K+T- il transistor eE acceso e la corrente < eE data daH

< . 0 OP+ A +T-Q1


.Gmin 1 .J H .T0 1 5. H 234. 1 H234.
<l graRico risulta GuindiH
0(0%'
Ke risulta che ?maM e<F
0(0%

0(02'

4. H .Gmin N34. 0(02


?maM 1 , 1 25m7 1 N45!
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"# $aschir+tt+ - .+te per il c+rs+ di 3lettr+4ica Capit&l& ) * +l tra-sist&r /01

Caratteristica ingresso-uscita Linearizzazione delle caratteristiche


del transistor 012
"serci(io * +III-
#aratteristica di ingresso

.ome approssima(ione si potre44e trascurare 6o2, e


ottenere9

6o : 6;; < 2=k=?=+6i < 6@A-=6o


" Buindi9
6;;
6o : DE2=k=?=+6i < 6@A-

&
,--
%

$ .atura3(one
la caratteristica :i i-gress& e< m&lt& -&-*li-eare
#aratteristica d/uscita
#

"
7(neare
!

! " # $ % &
'( [']

la caratteristica :i uscita e< m&lt& li-eare

5 - 67 8ct+9er :;< :==; ) * 23 0ct&5er 378 3997

A# $asch)rotto - .ote 0er )1 corso d) 31ettron)ca! Capitolo ) * +l transistor /O1

Circuito e*ui+alente per piccolo !"#$%"&'()*%"+,-).&)(/)#(/"$$'-'(


0egnale del tran0i0tor 345 0)1.,-)(2)-(&#,.0"0&'#(345(
!

! #$$%&''()*+(&,-! .(! &%.(,-! +-%&! /(,.($-,.-,0-! .*11*!


2%-34-,+*5!

!
" #a lineari**a*ione ,el generatore ,i corrente risulta
! 67! 484*1-! *1! 9(%94(0&! -34(:*1-,0-! .-1! 0%*,'('0&%! ;($&1*%-!
,-1!9*'&!.(!!<!=!9>-!9&)$&%0*!%"<!! 23 4 23 56789 638 9 6:8;
!

! #$$%&''()*+(&,-! .(! $%()7&%.(,-! /.($-,.-,0-! .*11*! " <re generatori ,i corrente controllati ,a tensioni sono
2%-34-,+*5! necessari=
! !23
gm 4 !678 transcon,uttan*a

? !23
g,s 4 ro 4 !638 con,uttan*a ,@uscita ,el ,rain

!23
gmA 4 !6:8 transcon,uttan*a ,i suAstrato
!
! ?,! $*%*)-0%&! 0($(9&! $-%! :*140*%-! 1*! :-1&9(0*7! .(! %('$&'0*! " <utti Buesti parametri ,ipen,ono ,al punto ,i laDoro
.-1!0%*,'('0&%!@AB!-7!1*!2%-34-,+*!.(!0%*,'(+(&,-!/2C5! 5polari**a*ione; ,el transistor
2C!<!8)DEFB!
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9&%%-,0-!,-11*!9&,2(84%*+(&,-!*!'&4%9-!9&)4,-!

5 - 67 8cto9er :;< :==; ) * 22 Octo4er 67, 6997


". $aschirotto - .ote per il corso 2i 3lettronica Capitolo V - Il transistor MOS

Circuito e*uivalente per piccolo Circuito equivalente per piccolo


segnale segnale
Transconduttanza 5gm7
" #ella regione sottosoglia. Transconduttanza (gm)
Id
gm0 3T
n 5
Inoltre gm dipende da che a sua volta e' funzione della
>come un transistor bipolare con nA1< n!2C temperatura, del campo elettrico trasversale e del
" #ella regione lineare. campo elettrico medio laterale
#W& #W&
gm 0 678o9 7 "! ; %$ 7V=S 0 273 7 "! ; %$ 7V=S
# T & 3/2 ) Ey ,+ m ) 1 ,
= 0 "!T0%$ (
'1 + Ecrit* ( VDS +
" #ella regione di saturazione. '1 + L Esat*
#W& #W&
gm 0 678o9 "! ; %$ 7 BVCS D VTEF 0 273 7 "! ; %$ 7BVCS D VTEF

SPICE usa un'equazione di fitting:

) ucrit - .si , uexp


= 0 ('Cox(VGS Von utra VDS)+*

" #elle situazioni reali la gm e' minore del Halore indicato


dalle e5uazioni

5 - 67 8ctober 27< 2007 V - 46 October 27, 2007

A. Baschirotto - Note per il corso di Elettronica Capitolo V - Il transistor MOS

Circuito equivalente per piccolo Circuito equivalente per piccolo


segnale segnale
Conduttanza d'uscita del drain (gds) Conduttanza d'uscita del drain (gds)
Correnti di valanga
Nella regione lineare
#W&
gds = Cox "! L %$ (VGS VTH VDS)
gds = 2k (VGS VTH VDS)

Nella regione di saturazione (appros. del I ordine) Cariche mobile, accellerate dal campo elettrico nella
gds = 'ID zona di svuotament del drain creano, per ionizzazione
Effetti del second'ordine: da impatto, delle coppie elettrone-lacuna
La riduzione della lunghezza di canale e' stata calcolata Cio' comporta un aumento della corrente di drain ID e
considerando solo la caduta di tensione laterale. Una della corrente di substrato IB
piu' accurata analisi da come risultato:

1 1 Cox -,1(VDS VGS) + 2(VGS Vsat)0/


(L ) (L(1st order) + *s + VDS Vsat .

La tensione di soglia dipende da VDS (per canali corti).


La mobilita' dipende dal campo laterale medio (VDS/L). IS = !ID " !L
L'effetto valanga aumenta ID. La corrente di substrato puo' favorire il latch-up
Il rumore del dispositivo aumenta
L'impedenza di uscita diminuisce
Portatori possono essere intrappolati nell' ossido e cio'
causa una variazione della tensione di soglia VTH
(effetto di elettroni caldi)

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