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SEMICONDUCTOR TECHNICAL DATA


   
 16 AMPERE PEAK
POWER TRANSISTOR
DARLINGTON NPN
The BU323A is a monolithic darlington transistor designed for automotive ignition, SILICON
switching regulator and motor control applications. 400 VOLTS
COLLECTOR
• VCE Sat Specified at –40_C = 2.0 V Max. at IC = 6 A. 175 WATTS
• Photoglass Passivation for Reliability and Stability.

BASE

≈1k ≈ 30

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CASE 1–07

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
EMITTER
TO–204AA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(TO–3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating Symbol Value Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage VCEO(sus) 400 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage VCBO 600 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage VEBO 8.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous IC 10 Adc
Peak (1) 16

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current — Continuous IB 3.0 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25_C PD 175 Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
@ TC = 100_C 100 Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Derate above 25_C 1.0 W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction TJ, Tstg – 65 to + 200 _C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case RθJC 1.0 _C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum Lead Temperature for Soldering TL 275 _C
Purposes: 1/8″ from Case for 5 Seconds
v
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.

REV 7

 Motorola, Inc. 1995 3–231

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
BU323A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Typ Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (Figure 1) VCEO(sus) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
L = 10 mH

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 200 mAdc, IB = 0, Vclamp = Rated VCEO) 400

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter sustaining Voltage (Figure 1) VCER(sus) Vdc
(IC = 3 A, RBE = 100 Ohms, L = 500 µH)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Unclamped 475

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (Rated VCER, RBE = 100 Ohms) ICER 1 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (Rated VCBO, IE = 0) ICBO 1 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VEB = 6 Vdc, IC = 0) IEBO 40 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain hFE

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 3 Adc, VCE = 6 Vdc) 300 550
(IC = 6 Adc, VCE = 6 Vdc) 150 350 2000

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 10 Adc, VCE = 6 Vdc) 50 150

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage VCE(sat) Vdc
(IC = 3 Adc, IB = 60 mAdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
1.5
(IC = 6 Adc, IB = 120 mAdc) 1.7

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 10 Adc, IB = 300 mAdc) 2.7
(IC = 6 Adc, IB = 120 mAdc, TC = – 40_C)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
2.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter Saturation Voltage VBE(sat) Vdc
(IC = 6 Adc, IB = 120 mAdc) 2.2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 10 Adc, IB = 300 mAdc) 3
(IC = 6 Adc, IB = 120 mAdc, TC = – 40_C)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
2.4

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage (IC = 10 Adc, VCE = 6 Vdc) VBE(on) 2.5 Vdc
Diode Forward Voltage (IF = 10 Adc) Vf 2 3.5 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz) Cob 165 350 pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Storage Time (VCC – 12 Vdc, IC = 6 Adc, ts 7.5 15 µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Fall Time IB1 = IB2 = 0.3 Adc) Fig. 2 tf 5.2 15 µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
FUNCTIONAL TESTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Second Breakdown Collector Current with IS/B See

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Forward Biased Figure10

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Pulsed Energy Test (See Figure 12) IC2L / 2 550 mJ
1 Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.

ftest = 200 Hz
VCC = 12 Vdc
VCC = 16 Vdc PULSE WIDTH = 1 ms
UNCLAMPED ≈ 15 Vdc 2 Ω/20 W
L IC = 6 Adc
0V
* 0 Vdc
t1 CLAMPED
20 ms 47 C C
1N4001 B 40 B
470 TUT
BC337 1N4001 TUT
* Vclamp
≈ 1K ≈ 30 ≈ 1K ≈ 30
VCER 51 100
VCEO
100
* Adjust t1 such that E E
* IC reaches Required
* value. IB = 0.3 Adc

Figure 1. Sustaining Voltage Test Circuit Figure 2. Switching Times Test Circuit

3–232 Motorola Bipolar Power Transistor Device Data

 BU323A

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

2000 3

TJ = 150°C TJ = 25°C
1000
2.5
700
hFE, DC CURRENT GAIN

500
25°C 2
300
200 10 A
1.5
100 3 6
70 VCE = 3 Vdc IC = 0.5 A
50 1
VCE = 6 Vdc
30
20 0.5
0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (AMP)
Figure 3. DC Current Gain Figure 4. Collector Saturation Region
VCE(sat) , COLLECTOR–EMITTER SATURATION VOLTAGE (V)

VCE(sat) , COLLECTOR–EMITTER SATURATION VOLTAGE (V)

1.7 2.2
1.6 2.1
1.5 IC/IB = 50 2.0 TJ = 25°C
1.4 1.9
1.3 1.8
1.2 1.7 TJ
1.1 1.6
1.0 1.5
0.9 1.4
0.8 TJ 1.3
0.7 1.2
0.6 1.1
0.5 1.0
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 5. Collector–Emitter Saturation Voltage Figure 6. Base–Emitter Voltage

10 104
7 VCE = 250 Vdc
ts
5 TJ = 150°C
IC, COLLECTOR CURRENT ( µA)

103
3
2 tf IC = ICES
102
t, TIME ( µs)

1
75°C
0.7 TJ = 25°C 101
0.5 IC/IB = 20
0.3 VCE = 12 Vdc
100 25°C
0.2
FORWARD
0.1 10 –1 REVERSE
0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 – 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8
IC, COLLECTOR CURRENT (AMP) VBE, BASE–EMITTER VOLTAGE (VOLTS)

Figure 7. Turn–Off Switching Time Figure 8. Collector Cutoff Region

Motorola Bipolar Power Transistor Device Data 3–233

BU323A
1

r(t), TRANSIENT THERMAL RESISTANCE

0.7
D = 0.5
0.5
0.3 0.2
(NORMALIZED)

0.2
0.1
0.1 P(pk)
0.05 RθJC(t) = r(t) RθJC
0.07 RθJC = °C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02 PULSE TRAIN SHOWN
0.03 t1
0.01 READ TIME AT t1 t2
0.02 SINGLE PULSE TJ(pk) – TC = P(pk) RθJC(t) DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 2000
t, TIME (ms)

Figure 9. Thermal Response

50 There are two limitations on the power handling ability of a

20 transistor: average junction temperature and second break-
100 µs
IC, COLLECTOR CURRENT (AMP)

10 down. Safe operating area curves indicate IC – VCE limits of

5 5.0 ms the transistor that must be observed for reliable operation,
2 1.0 ms i.e., the transistor must not be subjected to greater dissipa-
1 tion than the curves indicate.
The data of Figure 10 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
0.2 dc
TC = 25°C limits are valid for duty cycles to 10% but must be derated
0.1
when TC ≥ 25_C. Second breakdown limitations do not der-
BONDING WIRE LIMIT
ate the same as thermal limitations. Allowable current at the
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
voltages shown on Figure 10 may be found at any case tem-
0.01 perature by using the appropriate curve on Figure 11.
0.005 TJ(pk) may be calculated from the data in Figure 11. At high
5 10 20 30 50 70 100 200 300 500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im-
Figure 10. Forward Bias Safe Operating Area posed by second breakdown.

INDUCTIVE LOAD
100
<1 11 mH
VCC = 16 Vdc
POWER DERATING FACTOR (%)

80 SECOND BREAKDOWN VZ
t1
DERATING
0 Vdc
47
50 ms C
60 THERMAL 2.2
1N4001 B
DERATING 470
BC337 TUT
0.22
40 ≈ 1K ≈ 30 µF
VZ = 400 V (BU323A) 100
at IZ = 20 mA 1N4001
20 E

0
0 40 80 120 160 200 t1 to be selected such that IC reaches 10 Adc before switch–off.

TC, CASE TEMPERATURE (°C) NOTE: Figure 12 specifies energy handling capabilities in an automotive ignition circuit.

Figure 11. Power Derating Figure 12. Ignition Test Circuit

3–234 Motorola Bipolar Power Transistor Device Data

 BU323A
PACKAGE DIMENSIONS

A
N NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
–T– SEATING 2. CONTROLLING DIMENSION: INCH.
PLANE 3. ALL RULES AND NOTES ASSOCIATED WITH
E REFERENCED TO–204AA OUTLINE SHALL APPLY.
D 2 PL K
INCHES MILLIMETERS
0.13 (0.005) M T Q M Y M DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
U B ––– 1.050 ––– 26.67
L –Y–
V C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
2 E 0.055 0.070 1.40 1.77
G B G 0.430 BSC 10.92 BSC
H 1 H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
–Q– N ––– 0.830 ––– 21.08
Q 0.151 0.165 3.84 4.19
0.13 (0.005) M T Y M U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

CASE 1–07
TO–204AA (TO–3)
ISSUE Z

Motorola Bipolar Power Transistor Device Data 3–235

BU323A

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3–236 Motorola Bipolar Power Transistor Device Data

*BU323A/D*
◊ BU323A/D