Caricamenti by lin

Negative-resistance read and write schemes for STT-MRAM in 0.13µm CMOS.pdf

Forming-free HfO2 bipolar RRAM device with improved endurance and high speed operation.pdf

A 130.7-mm 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology.pdf

A 0.13 µm 8 Mb Logic-Based Cu Si O ReRAM With Self-Adaptive Operation for Yield Enhancement and Power Reduction.pdf

96 CW Thesis