EECS 40 Spring 2003 Lecture 16

S. Ross

NMOS (N-Channel Metal Oxide Semiconductor) Transistor

gate source metal n-type metal oxide insulator drain metal n-type

e e e h

h
p-type

h h
metal

e e e h

EECS 40 Spring 2003 Lecture 16

S. Ross

NMOS Transistor in Equilibrium

gate source metal n-type + + + _ _ metal oxide insulator _ drain metal _ n-type + + + _ _

h h
metal

p-type

When the transistor is left alone, some electrons from the ntype wells diffuse into the p-type material to fill holes. This creates negative ions in the p-type material and positive ions are left behind in the n-type material.

EECS 40 Spring 2003 Lecture 16

S. Ross

NMOS Transistor in Cutoff

VGS > 0
- +

gate drain metal n-type + + + _ _

source metal n-type + + + _ _

metal oxide insulator _ _ _ _ p-type

h
metal

When a small, positive VGS is applied, holes move away from the gate. Electrons from complete atoms elsewhere in the p-type material move to fill holes near the gate instead.

EECS 40 Spring 2003 Lecture 16

S. Ross

NMOS Transistor Channel

VGS > VTH(N)
- +

gate drain metal n-type + + + _ _

source metal n-type + + + _ _

metal oxide insulator ee_ e _e_ e _ _ p-type

h
metal

When VGS is larger than a threshold voltage VTH(N), the attraction to the gate is so great that free electrons collect there. Thus the applied VGS creates an induced n-type channel under the gate (an area with free electrons).

EECS 40 Spring 2003 Lecture 16

S. Ross

NMOS Transistor Drain Current

- +

VGS > VTH(N)

- +

gate

VDS > 0
drain metal n-type + + + _ _

source metal n-type + + + _ _

metal oxide insulator ee_ e _e_ e _ _ p-type

h
metal

When a positive VDS is applied, the free electrons flow from the source to the drain. (Positive current flows from drain to source). The amount of current depends on VDS, as well as the number of electrons in the channel, channel dimensions, and material.

EECS 40 Spring 2003 Lecture 16

S. Ross

NMOS Transistor
VGS
- +

VDS
- +

gate

source metal n-type

IG
metal n-type

ID
drain

metal oxide insulator

p-type metal
G

+ _
S

IG ID VDS +
D

GS

EECS 40 Spring 2003 Lecture 16

S. Ross

NMOS I-V CHARACTERISTIC

G

+ _
S

IG ID VDS +
D

GS

Since the transistor is a 3-terminal device, there is no single I-V characteristic. Note that because of the insulator, IG = 0 A. We typically define the MOS I-V characteristic as ID vs. VDS for a fixed VGS.

EECS 40 Spring 2003 Lecture 16

S. Ross

MODES OF OPERATION For small values of VGS, VGS VTH(N), the n-type channel is not formed. No current flows. This is cutoff mode. When VGS > VTH(N), current ID may flow from drain to source, and the following modes of current flow are possible. The mode of current flow depends on the propelling voltage, VDS, and the channel-inducing voltage, VGS VTH(N). When VDS < VGS VTH(N), current is starting to flow. ID increases rapidly with increased VDS. This is triode mode. When VDS VGS VTH(N), current is reaching its maximum value. ID does not increase much with increased VDS. This is called saturation mode.

EECS 40 Spring 2003 Lecture 16

S. Ross

NMOS I-V CHARACTERISTIC Cutoff Mode Occurs when VGS VTH(N) ID = 0 Triode Mode Occurs when VGS > VTH(N) and VDS < VGS - VTH(N)

W ID = nCOX ( VGS VTH(N) ( VDS /2) ) VDS L

Saturation Mode Occurs when VGS > VTH(N) and VDS VGS - VTH(N)

W 1 2 ID = nCOX ( VGS VTH(N) ) (1+ n VDS ) L 2

EECS 40 Spring 2003 Lecture 16

S. Ross

NMOS I-V CHARACTERISTICS ID triode mode saturation mode VGS = 3 V VDS = VGS - VTH(N) VGS = 2 V

VGS = 1 V VDS cutoff mode

EECS 40 Spring 2003 Lecture 16

S. Ross

PMOS (P-Channel Metal Oxide Semiconductor) Transistor

gate source metal p-type metal oxide insulator drain metal p-type

n-type

metal

Same as NMOS, only p-type and n-type switched

EECS 40 Spring 2003 Lecture 16

S. Ross

PMOS Transistor Channel

VGS < VTH(P) < 0
- +

gate drain metal p-type _ _ _ + + +

source metal p-type _ _ _ + + +

metal oxide insulator h +h+h + h + h + n-type

e
metal

When VGS is more negative than a threshold voltage VTH(P), the gate attracts many positive ions and holes (repels electrons) Thus the applied VGS creates an induced p-type channel under the gate (an area with positive ions).

EECS 40 Spring 2003 Lecture 16

S. Ross

PMOS Transistor Drain Current

- +

VGS < VTH(P) < 0

- +

gate

VDS < 0
drain metal p-type _ _ _ + + +

source metal p-type _ _ _ + + +

metal oxide insulator h +h+h + h + h + n-type

e
metal

When a negative VDS is applied, the positive ions flow from the source to the drain. (Positive current flows from source to drain). The amount of current depends on VDS, as well as the number of ions in the channel, channel dimensions, and material.

EECS 40 Spring 2003 Lecture 16

S. Ross

PMOS TRANSISTOR
G

IG
+ _
S

GS

ID VDS +
D

Symbol has dot at gate. NMOS does not. ID, VGS, VDS, and VTH(P) are all negative. These values are positive for NMOS. Channel formed when VGS < VTH(P). Opposite for NMOS. Saturation occurs when VDS VGS VTH(P). Opposite for NMOS.

EECS 40 Spring 2003 Lecture 16

S. Ross

Cutoff Mode Occurs when VGS VTH(P)

PMOS I-V CHARACTERISTIC

ID = 0 Triode Mode Occurs when VGS < VTH(P) and VDS > VGS - VTH(P)

W ID = pCOX ( VGS VTH(P) ( VDS /2) ) VDS L

Saturation Mode Occurs when VGS < VTH(P) and VDS VGS - VTH(P)

W 1 2 ID = pCOX ( VGS VTH(P) ) (1+ p VDS ) L 2

EECS 40 Spring 2003 Lecture 16

S. Ross

PMOS I-V CHARACTERISTICS VDS cutoff mode

VGS = -1 V

VGS = -2 V VDS = VGS - VTH(P) VGS = -3 V saturation mode triode mode ID