Documenti di Didattica
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V2.1 2007/4/10
2004/4/5
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Annular Ring
1 2
Through Hole
Dielectric
2004/4/5
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2004/4/5
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/ V-Cut
AOI H
Multi-Layer Process
2004/4/5
AOI
6/58
Artwork
( ( ) (Glass Photo-mask) )
7 mil
p
< 1500 < 800
Artwork Punch
pin
2004/4/5
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Barco/SilverWriter
2004/4/5
: 4000~25400 dpi : 18"x24", 28"x 32" : < 0.16 mil, 4 Qm : < 0.08 mil, 2 Qm : < 0.5 mil, 12.7 Qm : < 0.58 mil, 12.7 Qm Throughput: PCB 18"x24", 4000 dpi, 2 min/pcs : 7 mil : 18"x24"~28"x 32"( ) : 20"x24", 20"x26", 22"x26", 22"x28", 24"x28", 24"x30" 9/58
Kodak ARX7
Toolings
Artwork
Pin
/Pad
SMT x3
Coupon
2004/4/5
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+
AOI
+ +
PP
X-Ray
2004/4/5
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H
Dry Film Lamination Roller Coating
PCB -Cu CCL
2004/4/5
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- Resolution
Resolution
L/S = 3/3 mil s 0.45 mil L/S Tolerance
Conventional s20% Impedance control s15%, s10%, s7.5%
Resist
Thickness Thick uniformity
Exposure
Energy uniformity s10%, s 5% Light angle: CHA + DA
H Developing Ex. 1 oz Cu: 4/4 5/3 Break point position Ex. 0.5 oz Cu: 3/3 3.5/2.5 Uniformity Error Budget Example Etching Uniformity Artwork
DPI resolution Positioning error Compensation factor error 15/58 Etching time Etching factor
2004/4/5
- Registration
Registration
Requirement: Align Top and Bottom side patterns Specification:
4 Layer PCB: < 1mil 6 Layer PCB: < 0.5 mil
Error Budget
Artwork target position error
Plotting error Distance shrinkage error
Manual alignment
Solid cross and edge
Automatic alignment
Solid circle and Ring
2004/4/5 16/58
CCD capture error (back light angle) Image processing software error Mechanical adjustment error Exposure error
H : : 1.0, 1.3 mil 8 ~ 12 Qm
Exposure
: 45 ~ 60 mj/cm2 : 80 ~ 120 mj/cm2 UVE-M500, M550, UVE-A220, A280
2004/4/5 17/58
Holding
15 min
Mylar
Developing
1 ~ 2% Na2CO3 / 30 ~ 32 rC (Break Point) 50 ~ 75% (Scum)
DES
H
CuCl2 FeCl3
Etching
H H ( )
Stripping
3 ~ 5% NaOH 45 ~ 55 rC
2004/4/5
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2004/4/5
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Etch Progression
Etch 3/3 on 1 oz Cu
Undercut = (R-T)/2 Etch factor=2t/(B-T) Extent of etch = R/B
2004/4/5
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H
Etch 3/3 on 1 oz Cu Spec: 3/3 s 0.45 mil (15%)
Etch time Top Bottom Mid mil 90 s 2.9 110 s 2.4 125 s 2.1 140 s 1.95 165 s 1.5 mil 6.0 4.0 3.3 3.0 2.4 mil 4.45 3.2 2.7 2.48 1.95 Bottom Under Etch Space cut factor mil 0.0 2.0 2.7 3.0 3.6 0.05 0.30 0.45 0.525 0.75 0.90 1.75 2.33 2.67 3.11
Unit: mil
2004/4/5 21/58
H
1995~1996 / 175 m 7 mil 50 m 2 mil 3 (Y/X) 50 m 2 mil 125 m 5 mil 35 m 1.4 mil 4 50 m 2 mil 1997~2000 / 125 m 5 mil 25 m 1 mil 3 50 m 2 mil 75 m 3 mil 10 m 0.4 mil 4 50 m 2 mil 2001~2010 / 100 m 4 mil 25 m 1 mil 4 50 m 2 mil 50 m 2 mil 15 m 0.6 mil 5 25 m 1 mil
Attribute
H Core
2004/4/5
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Pre-Treatment
Scrubbing
p Now ,
Pumice Pumice
H
, , H2SO4+H2O2 H Micro Etch
2004/4/5
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Capacity:
3 m/min for outer layer 2.5 m/min for inner layer
Induction heater
Up to 120 s 3 rC
Pre Heat
40 ~ 50 rC
Cooling
10 ~ 15 min
2004/4/5
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PCB:
Roller Coating
Roller Coating 8~12 Qm
Oven
Roller Oven IR PCB
2004/4/5
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UVE-M500
5KW Mylar
2004/4/5
: 740 x 610,
29/58
:85%
UVE-A220
CCDx2 n
pin
x2
2004/4/5
UVE-A220/A280
PCB Layout
PCB
2004/4/5
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Open/Short AOI Automatic Optical Inspection
Inline Off-Line
L/S, , Registration
H 0.7 mil
2004/4/5
: : :
Drilling
, PCB 3 or 4 , : , ,
2~3
Pin p Pin p p p Pin p , , J3.175 mm=125 mil 4000 /ft2 Spindle , 8~16 rpm 2 / , 7~8K /hr, 2000 Ex. , 6 spindles, 24 panel/cycle
2004/4/5
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Debur Desmear
KMnO4 NaMnO4
Copper Plating
Panel Plating 0.3 ~ 0.5 mil
Plasma
Throwing Power
/
2004/4/5
Pattern Plate
)
H
H
1.3, 1.5 mil
2004/4/5
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- Resolution
Resolution Error Budget Example
L/S = 3/3 mil L/S Tolerance
Conventional s20% Impedance control s15%, s10%, s7.5%
Exposure
Uniformity Light angle
Developing Cu Plating
Uniformity
Artwork
DPI Compensation
Cu Etching
Uniformity Etching factor
Resist
Thickness
2004/4/5
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- Registration
Registration
Requirement:
Align circuit pattern to via holes
Automatic alignment
Solid circle and Hole
Error Budget
Artwork/PCB pitch error
Dimensional stability
Specification: Ring
+5 mil ring: < 2 mil +3 mil ring: < 1 mil
2004/4/5
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Attribute
2004/4/5
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Exposure
45 ~ 70 mj/cm2 CCD 20 Qm UVE-A250, A800
Developing
1 ~ 2% Na2CO3 /
2004/4/5
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Copper Plating
Pattern Plating 0.5 ~ 0.7 mil 1 mil ~ 1010 Amin Ex. 20A, ~50 min
Tin/Lead Plating
,
2004/4/5
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Stripping
3 ~ 5% NaOH 45 ~ 50 rC
SES
Etching
H ( ( ) )
2004/4/5
Tin/Lead Stripping
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Attribute
1995~1996 / 200 m 8 mil 40 m 1.6 mil 0.3 (X/Y) 150 m 6 mil 20 m 0.8 mil 0.25
1997~2000 / 150 m 6 mil 30 m 1.2 mil 0.3 100 m 4 mil 15 m 0.6 mil 0.25
2001~2010 / 100 m 4 mil 20 m 0.8 mil 0.3 75 m 3 mil 15 m 0.6 mil 0.2
2004/4/5
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UVE-M565
HEPA
2004/4/5
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UVE-M565
s10 Qm
2004/4/5
s 25 Qm
47/58
UVE-M565
PCB Layout
UVE-A800
2004/4/5
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UVE-A800
CCD
2004/4/5
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UVE-A800
PCB Layout
2004/4/5
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L/S
Annular Ring
Ex. +5mil ring
Via
, Ring
Short
2004/4/5
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1st 1st UV
2004/4/5
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Pad min. D
pad
a b
Accuracy = (a-b)/2
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Post cure Ex. 0.8 mil + 4 mil Solder Mask Over Bare Copper
SMOBC
UV
2004/4/5
Pre Cure (Tack Dry)
75rCs1rC, 25 min 75rC, 35 min 75rC, 45 min 2H, SMO-7A/8A CCO-7-6, 8
Post Cure
150rC s3rC, 60 min 6~8H SMO-7A/8A CCO-7-12
Exposure
400~600 mj/cm2
UVE-M720
UV
/ ( UVC-754MD )
Developing
57/58
UVE-M720
7KW Mylar
2004/4/5
: 810 x 610,
:85%
58/58