LOGO

Gallium Nitride
Contents Properties of GaN Structure of GaN Applications Processing Techniques Metalorganic CVD An Introduction to MOCVD Application Example Moleculer Beam Epitaxy An Introduction to MBE Application Example
2

Gallium Nitride
GaN is semiconductor commonly used
in bright light emitting diodes (LEDs) since 1990s.
GaN Crystal

Properties

http://en.wikipedia.org/wiki/File:GaNcrystal.jpg

Wide and direct energy gap,

High heat capacity,

Environmentally friendly compared to Arsenic, Resistance to effects of radiation.

Gallium Nitride
Structure of GaN Hexagonal (Alpha) GaN

Cubic (Beta) GaN

Zinc Blende Meta Stable

Wurtzite
Stable

Direct Energy Gap (~3.2 eV)

4

Direct Energy Gap (~3.4 eV)

Gallium Nitride
Applications

LED white lambs, Traffic lambs, Full-color printers and scanners, Key material for high frequency and high power transistors, Blue-Ray Discs laser diode readers, Nano scale electronics, Solar cell arrays for satellites, Microwave radio-frequency power amplifiers.

Gallium Nitride
Processing Techniques

Metalorganic CVD (MOCVD)

Moleculer Beam Epitaxy (MBE)

Metalorganic CVD

A. Damla Serarslan, 521111001

Metalorganic CVD

A chemical vapour deposition method of epitaxial growth of materials, especially compound semiconductors The surface reaction: organic compounds or metalorganics + metal hydrides containing the required chemical elements Formation of the epitaxial layer: pyrolysis of the constituent chemicals at the substrate surface The growth of crystals is by chemical reaction

Metalorganic CVD
Principle of operation: transport of precursor molecules (group-III metalorganics + group-V hydrides or alkyls) by a carrier gas (H2, N2) onto a heated substrate; surface chemical reactions. The process takes place not in a vacuum, but from the gas phase at moderate pressures (2 to 100 kPa). Wide application for devices such lasers, LEDs, solar cells, photodetectors

Metalorganic CVD

10

Metalorganic CVD
Reactors Chamber material must be nonreactive with the chemicals being used. It must also withstand high temperatures. (stainless steel or quartz) Components:
Gas handling system Pressure maintenance system Gas exhaust and cleaning system

11

Metalorganic CVD

Carrier Gas Material Sources Gas Handling System

Exhaust System
12

Reactor

Gas Handling System Gas is introduced via 'bubblers'. In a bubbler a carrier gas is bubbled through the metalorganic liquid, which picks up some metalorganic vapour and transports it to the reactor.

13

Metalorganic CVD
Material Sources Volatile precursor molecules transported by the carrier gas Growth of III-V semiconductors:
Group III: generally metalorganic molecules (trimethyl- or triethyl- species) Group V: generally toxic hydrides (AsH3; PH3 flammable as well); alternative: alkyls (TBAs, TBP).

14

Application Example
Suat ner Ik

15

LOGO

High Quality GaN Nanowires Synthesized Using a CVD Approach

Blue light emitting diodes

16

 GaN is a new generation of semi conductors .

The growth of GaN nanowires over large area substrate is very important for the application of nanowires and need to be optimized.Control of morphology is also important because surface roughness will affect the near band-gap emissions.

17

How can it be produced? High quality GaN nanowires are syntesized on a large area Si substrate by direct reaction of gallium with ammonia using InCl3 as a catalyst. A polished Si wafer of 10x20mm2 was cleaned in %80 HCl solution for 30 min and rinsed with distilled water.Thin layer of gallium melt is deposited on the surface of S wafer and several drops of InCl3 ethanol solution are spread over the surface of the gallium layer. The Si substrate is placed in a quartz boat in a tube furnace which evacuated to about 20mTorr and purged with argon. The temperature of the furnace was increased to 920C at a rate of 30C/min under a constant flow of argon.Kept 920C for 20 min. under constant flow of ammonia.Then the furnace is cooled to room temperature,a layer of light yellow products can be visible on the surface of Si in the quartz boat.
18

The products are first characterized by X-ray diffraction.

The sharp diffraction peaks reveal that GaN nanowires synthesized in high quality.

19

It is visible that the GaN nanowires are grown over a large on the substrate.Very densed GaN nanowires.

The nanowires have a very smooth and straight morpology .

These GaN nanowires have extreme uniformity in diameter around 80nm,smooth morphology which is obviously advantageous in nanodevice applications.
20

 The catalysts play an important role in the synthesis of the nanowires.Eutectic liquid droplets (under proper temperature with the reactants ) diameter is very important for final diameter of nanowires.

21

MBE
Introduction and Background
What is epitaxy? Molecular Beam Epitaxy

22

MBE
Experimental Methods
Vacuum consideration Growth chamber details Growth characterization and rate monitors Beam flux, stoichiometry
A commercial MBE system delivered by VG Semicon

23

MBE

Illustration of the deposition chamber

24

MBE
Diagnostic instruments for MBE Auger Electron Spectroscopy(AES, SEM) Ellipsometry Laser interferometric method Reflection High-Energy Electron Diffraction (RHEED) Surface Acoustic Wave Devices (Quartz Crystal Microbalances)
25

MBE
Advantages of MBE Technique Clean growth environment Precise control of the beam fluxes and growth condition Easy implementation of in situ diagnostic instruments Compatibility with other high vacuum thin-film processing methods (metal evaporation, ion beam milling, ion implantation)
26

MBE
Molecular Beam Epitaxy in Industry
Research & prototypes High-frequency receivers Portable phones DIRECTV Optoelectronics DVD Digital cameras Superconductors YBa2Cu3O7-d
27

 Application Examples of GaN with MOCVD and Molecular Beam Epitaxy methods

Kbra elik Malzeme Bilimi Ve Mhendislii 521112003

28

 GaN-based semiconductors have been studied for their use in high-brightness green, blue, and white light-emitting diodes (LEDs); laser diodes; ultraviolet photo-detectors; and high power or high temperature microelectronic devices. GaN heteroepitaxy; the growth of GaN on foreign substrates, is still a standard process in the optoelectronic industry. The relatively low price and availability of sapphire make it one of the most suitable substrates for GaN heteroepitaxy

Ga2O3 Pulsed Laser Deposition on Conventional Sapphire Substrate GaN Metalorganic Chemical Vapor Deposition (MOCVD) on Ga2O3 InGaN Light-Emitting Diode (LED) structure was successfully fabricated on the GaN/Ga2O3/sapphire
29

 The growth atmosphere played a more important role in the crystallinity of GaN on Ga2O3 thin film N2 atmosphere and H2 atmosphere has been studied The Ga2O3 interlayer completely decomposed within the surrounding H2 at the elevated temperature Reduction reaction of Ga2O3 by H2 gas at high temperature

30

GaN formed as grains, not as a layer

 SEM micrograph of GaN grown on a Ga2O3 interlayer in an H2 ambient It is clear that GaN formed as grains, not as a layer

31

 The light emitting images of the InGaN LED fabricated on the GaN/Ga2O3/sapphire with a 50 mA operating current are shown High brightness blue emitting

32

The growth of heavily Mg-doped GaN thin film on Si substrate by Molecular Beam Epitaxy
The wide band gap semiconductors of IIInitrides such as GaN, AlN and their alloys, have received considerable attention as ideal materials for optoelectronic and hightemperature/high-power devices due to their unique properties, such as large direct band gap, high breakdown field and high thermal conductivity Mg-doped GaN could be converted into conductive p-type material by low-energy electronbeam irradiation (LEEBI) The growth of GaN thin film on Silicon substrate has a number of advantages as compared to other substrates including lower cost, excellent wafer quality, and more design flexibility with current silicon electronic circuit system
33

The growth of heavily Mg-doped GaN thin film on Si substrate by Molecular Beam Epitaxy

P-type GaN on Si was normally grown by using molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). MBE and MOCVD have been demonstrated and reported to be two of the advanced growth techniques for fabricating IIInitrides compound semiconductors with high crystal quality for device applications. However, MBE offers a number of potential advantages over MOCVD for the growth of IIInitride materials. For instances, more efficient use of source materials, higher accuracy in controlling the epilayers, as well as no requirement for post-growth annealing for the activation of p-type dopant

34

The growth of heavily Mg-doped GaN thin film on Si substrate by Molecular Beam Epitaxy

The growth of heavily Mg doped GaN on Si (111) by Plasma-assisted Molecular Beam Epitaxy (PAMBE) has been done. The structural and optical characteristics of the grown p-GaN were analyzed

35

LOGO

36

References
The growth of heavily Mg-doped GaN thin film on Si substrate by Molecular Beam Epitaxy Thin Solid Film 2011 756-760 MOCVD growth of GaN on sapphire usingGa2O3 interlayer J. Of Electrochemical society 158 H1172 2011 R. L. Moon and Y.-M. Houng, in Chemical vapor deposition Principles and applications, edited by M. L. Hitchman and K. F. Jensen, Academic Press, London, 1993 G. B. Stringfellow, Organometallic vapor phase epitaxy: theory and practice, Academic Press, Boston, 1989

37