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ISSUES TO ADDRESS...
How are electrical conductance and resistance characterized? What are the physical phenomena that distinguish conductors, semiconductors, and insulators? For metals, how is conductivity affected by imperfections, T, and deformation? For semiconductors, how is conductivity affected by impurities (doping) and T?
Chapter 18- 1
Si (doped)
45 m
(b)
0.5 mm
Fig. (d) from Fig. 18.25, Callister 6e. (Fig. 18.25 is courtesy Nick Gonzales, National Semiconductor Corp., West Jordan, UT.)
Chapter 18- 2
ELECTRICAL CONDUCTION
Ohm's Law:
voltage drop (volts) current (amps)
DV = I R
resistance (Ohms)
DV I r L A
rL L A As
Resistance: R
I s r
Chapter 18- 3
CONDUCTIVITY: COMPARISON
Room T values (Ohm-m)
-1
Selected values from Tables 18.1, 18.2, and 18.3, Callister 6e.
Chapter 18- 4
What is the minimum diameter (D) of the wire so that DV < 1.5V? 100m < 1.5V
-1
Energy States:
-- the cases below for metals show that nearby energy states are accessible by thermal fluctuations.
Chapter 18- 6
Semiconductors:
--Higher energy states separated by a smaller gap.
Chapter 18- 7
Resistivity
increases with:
--temperature --wt% impurity --%CW
r rthermal r thermal
Adapted from Fig. 18.8, Callister 6e. (Fig. 18.8 adapted from J.O. Linde, Ann. Physik 5, p. 219 (1932); and C.A. Wert and R.M. Thomson, Physics of Solids, 2nd ed., McGraw-Hill Book Company, New York, 1970.)
rdef
Chapter 18- 8
r 30x10
Ohm m
1 s 3.3x10 6 (Ohm m) 1 r
Chapter 18- 9
Adapted from Fig. 19.15, Callister 5e. (Fig. 19.15 adapted from G.L. Pearson and J. Bardeen, Phys. Rev. 75, p. 865, 1949.)
# holes/m 3
s ne e p e h
# electrons/m 3
hole mobility
Chapter 18- 11
electron mobility
Extrinsic:
--n p --occurs when impurities are added with a different # valence electrons than the host (e.g., Si atoms)
s n e e
s p e h
Comparison: intrinsic vs
extrinsic conduction...
--extrinsic doping level:
1021/m3 of a n-type donor impurity (such as P). --for T < 100K: "freeze-out" thermal energy insufficient to excite electrons. --for 150K < T < 450K: "extrinsic" --for T >> 450K: "intrinsic"
Adapted from Fig. 18.16, Callister 6e. (Fig. 18.16 from S.M. Sze, Semiconductor Devices, Physics, and Technology, Bell Telephone Laboratories, Inc., 1985.)
Adapted from Fig. 19.15, Callister 5e. (Fig. 19.15 adapted from G.L. Pearson and J. Bardeen, Phys. Rev. 75, p. 865, 1949.)
Chapter 18- 13
SUMMARY
Electrical conductivity and resistivity are:
--material parameters. --geometry independent.
ANNOUNCEMENTS
Reading:
Core Problems:
Self-help Problems:
Chapter 18- 0