Prof. D. M. Chandwadkar, K.K.

Wagh Institute of Engineering Education & Research, Nashik

INTRODUCTION TO POWER ELECTRONICS

Scope of Discussion
 Basics of Power Electronics  Power conversion and basic principle  Categories of power conversion  Power Semiconductor Devices: Diode,

Thyristor, IGBT etc  Protection of Thyristors and IGBTs

Power Electronics
 Definition
Application of Electronics (solid state devices) for conversion and control of power

 Application areas  Power conversion techniques:

Linear Switch Mode Resonant

Power Conversion
 Block Diagram
Power input Power Converter Control input Controller Reference Power output Feedforward ( measurements of input signals ) Feedback (measurements of output signals )

 Types of power converters

Rectifiers : AC DC Conversion Converters: AC Controlled DC : Possibly control dc voltage, ac current Inverters : DC - AC : Produce sinusoid of controllable magnitude and frequency Choppers : DC- DC :Change and control voltage magnitude

Importance of Efficiency
 High efficiency leads to low power loss within

converter  Small size and reliable operation is then feasible  Efficiency is a good measure of converter performance  Reduce losses: proper selection and use of devices

Power Switches
 Switch Ideal Characteristics Practical Characteristics  Limitations of Electromechanical switches  Power Semiconductor Devices as switches Diode Power BJT Power MOSFET IGBT Thyristors : SCR, Triac

P-N Junction Diodes

 Forward Bias
Current flows from P to N

 Reverse Bias
No Current flows

Diode cont
 Unidirectional (Single Quadrant switch)  Uncontrolled
Forward biased diode = switch in ON condition
Can conduct positive on state current

Reverse biased diode = switch in OFF condition

Can block negative off state voltage

 Where do we use diodes ?  Selection criterion / Ratings  Requirement related to behavior/ characteristics
Rectifiers (General Purpose) Converters (General Purpose) Inverters (Fast Recovery) Choppers (Fast Recovery)

 Types

Diode Characteristic

Freewheeling diode
 Switching inductor current  Direction of diode is important  What will happen if diode is connected in

opposite way?

What is a transistor?
 A transistor is a 3 terminal electronic device made of semiconductor material.  Transistors have many uses, including amplification, switching, voltage regulation, and the modulation of signals

Transistor
 An active switch, controlled by terminal B  Single-quadrant switch  Can conduct positive on state current  Can block positive off-state voltage

Transistor
  

Bipolar Junction Transistors NPN Transistor Most Common Configuration Base, Collector, and Emitter
Base is a very thin region with less dopants Base collector junction reversed biased Base emitter junction forward biased Fluid flow analogy: If fluid flows into the base, a much larger fluid can flow from the collector to the emitter If a signal to be amplified is applied as a current to the base, a valve between the collector and emitter opens and closes in response to signal fluctuations

PNP Transistor essentially the same except for directionality

Transistor cont
 BJT (Bipolar Junction Transistor)
npn
Base is energized to allow current flow

pnp
Base is connected to a lower potential to allow current flow

 Parameters of interest
Current gain ( ) Minimum voltage drop across the collector and emitter when transistor is saturated VCE(SAT)

Power BJT
 Unidirectional  Controlled switch
Forward biased + sufficient base current = switch in ON condition (Saturation Region) Reverse biased = switch in OFF condition (Cutoff Region) Forward biased + n0 or insufficient base current = switch in OFF condition (Cutoff Region)

 Where do we use BJTs in PE?

Inverters (Medium Switching frequency) Choppers (Medium Switching frequency)

 Limitations

BJT Characteristics

Driver Circuit
 Requirement  Simple circuit  Protection (FWD)

Comparison
 BJT has been replaced by MOSFET in low   

voltage (<500V) applications BJT is being replaced by IGBT in applications at voltages above 500V A minority-carrier device: compared with MOSFET, the BJT Exhibits slower switching, but lower onresistance at high voltages Continuous base drive required

Power MOSFET
 Unidirectional / Reverse Diode  Controlled switch
Forward biased + sufficient Gate Voltage= switch in ON condition Reverse biased = switch in OFF condition Forward biased + n0 or insufficient Gate Voltage = switch in OFF condition

 Where do we use MOSFETs in PE?

Inverters (Fast Switching) Choppers (Fast Switching)

 Comparison with Power BJT  Limitations

MOSFET Characteristics

  

Easy to control by the gate Optimal for low-voltage operation at high switching frequencies On-state resistance a concern at higher voltage ratings

MOSFET cont
 A majority-carrier device: fast switching speed  Voltage controlled device  Care is must while handling  Typical switching frequencies: tens and hundreds of kHz  On-resistance increases rapidly with rated blocking voltage  Easy to drive  The device of choice for blocking voltages less than 500V  1000V devices are available, but are useful only at low power

levels (100W)
 Part number is selected on the basis of on-resistance rather

than current rating

IGBT
 IGBT = Insulated Gate Bipolar Transistor  Combine of BJT and MOS in Darlington

configuration
 Gate drive (voltage drive)

IGBT cont
 Unidirectional  Controlled switch
Forward biased + sufficient Gate Voltage= switch in ON condition Reverse biased = switch in OFF condition Forward biased + n0 or insufficient Gate Voltage = switch in OFF condition

 Where do we use IGBTs in PE?

Inverters (Fast Switching) Choppers (Fast Switching)

IGBT cont
 Becoming the device of choice in 500-1700V      

applications, at power levels of 1-1000kW Positive temperature coefficient at high current easy to parallel and construct modules Forward voltage drop: diode in series with onresistance. 2-4V typical Easy to drive similar to MOSFET Slower than MOSFET, but faster than Darlington, GTO, SCR Typical switching frequencies: 3-30kHz IGBT technology is rapidly advancing next generation: 2500V

IGBT cont
 Compared to BJT and Power-MOS, IGBT has
Higher on-state voltage and current density Higher input impedance Rapid switching times Lower conduction losses Less silicon area because the gate driver circuit is simpler

 Becomes a popular switching device in medium

and high power applications (>100W)

 To increase voltage rating (>1000V), need to use

series-connected IGBTs

IGBT Characteristics

IGBT: Switching Losses

Energy dissipation over a period:
Edissipate ! iC (t ) v VCE (t ) dt

To minimize loss -> faster turn-on and turn-off For faster turn-on > increase gate drive voltage > decrease series gate resistance For faster turn-off > reduce tailing current > short minority carrier lifetime

IGBT: Safe Operating Area

Current and voltage boundary within which the IGBT can be operated without destructive failure Long duration of simultaneous high voltage and current across IGBT leads to thermal breakdown > Reduce overcurrent and overvoltage > Imply slower turn-on and turn off!! Trade-off between speed (switching losses) and overshoot voltage (circuit reliability)

Comparison
 Table

Thyristors
 SCR

Power Converters
 Diode rectifiers  Converters  Choppers  Inverters

Diode Rectifiers
 Rectifiers

Converters
 Classification
No. of phases Quadrant operation

 Performance parameters  1

converters
Semi converter Full converter

 3

converters

DC DC Converters (Choppers)
 Principle of operation  Classification  Step down chopper (Buck converter)  Step up chopper (Boost converter)  Applications

Inverters
 Inverter  3 phase Inverters

Snubbers
 Need of sunbber circuit  For SCR
dv/ dt , di/ dt

 For Transistors
Safe operating area (SOA)

Function: Protect semiconductor devices by:

 Limiting device voltages during turn-off transients  Limiting device currents during turn-on transients  Limiting the rate-of-rise (di/dt) of currents through

the semiconductor device at device turn-on  Limiting the rate-of-rise (dv/dt) of voltages across the semiconductor device at device turn-off  Shaping the switching trajectory of the device as it turns on/off

Protection of switching devices and circuits:

Switching devices and circuit components may fail due to the following reasons. Overheating thermal failure Overcurrent Overvoltage usually happens during turn-off Excessive di /dt Excessive dv /dt Switching loss excessive switching loss is a major contributing factor of overheating.

Power electronic circuits and their switching devices and components can be protected from overcurrent by placing fuses at suitable locations. Heat sinks, fins and fans are used to take the excess heat away from switching devices and other components. Snubber circuits are required to limit di/dt, dv/dt and overvoltage during turn-on and turnoff.

 Thank you!