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ROM for low power application (Fig. 10-13) ROM timing (Fig. 10-14)
tAA: Access time from address. tACS: Access time from chip select. tOE: Output Enable time. The propagation delay from OE and CS both asserted until the output drivers have left the Hi-Z state. tOZ: Output-Disable Time tOH: Output-Hold time
SRAM timing
Read timing (Fig. 10-22) tAA : Access time from address tACS : Access time from chip select tOE : Output-Enable time tOZ : Output-Disable time tOH : Output-Hold time
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Write timing (Fig. 10-23) tAS: Address setup time before write tAH: Address hold time after write tCSW: Chip-select setup before end of write tWP: Write pulse width tDS: Data setup time before end of write tDH: Data hold time after end of write WE-controlled write versus CS-controlled write (Fig. 10-23)
Standard static RAMs (Fig. 10-24) Asynchronous SRAM and Synchronous SRAM
Reading a DRAM cell destroy the original voltage stored on the capacitor, the DRAM cell must be written back the original data after reading. DRAM refresh (Fig. 10-32) Internal structure of a 64Kx1 DRAM (Fig. 10-33) Multiplexed address inputs RAS_L: Row address strobe to store the higher order bits of the address into the row-address register. CAS_L: Column address strobe to store the lower order bits of the address into the column-address register. Row latches: the latches used to store data input/output from the memory array.
DRAM timing
RAS-only refresh-cycle timing (Fig. 10-34) Read cycle (Fig. 10-35) Write cycle (Fig. 10-36)
Synchronous DRAM
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10.5 Complex Programmable Logic Devices 10.6 Field-Programmable Gate Arrays (FPGA)
Xilinx XC4000 FPGA family Configurable logic block (CLB) (Fig. 10-44) Configurable interconnect structure (Fig. 10-46) CLB and wiring details (Fig. 10-47)
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