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K p+ n i n+ A
1020
|ND-NA|
1016
1012 x
E ideal
real
x
E(t) EAC (T/4)
IMPATT diode
Eb
T=0
n(x,t)
x V(t)=VDC +vAC (t)
E(t) E(t)=EDC + EAC (t)
EAC (T/2)=0
Eb EDC ≈ Eb
T=T/4
n(x,t)
x
E(t) EAC (3T/4) τ T=T/4
Eb n(x,t)
T=T/2
x
E(t) EAC (T)=0
Eb
T=3T/4
n(x,t)
x
V IMPATT I-V Characteristics
vAC V DC
t
0 T/2 T 3T/2 2T 5T/2
Qinj iAC ~-vAC
rAC <0
PAC =iAC vAC /2<0
t Power is
0 T/2 T 3T/2 2T 5T/2
transferred
I to the field
iAC
IDC
t
0 T/2 T 3T/2 2T 5T/2
Classification
Device structure is based on the doping profile. The three basic
types of Impatt diodes are:-
1. Single drift region (SDR) - The SDR diode consists of a
single avalanche zone and a single drift zone with p+nn+ structure.
2. Double drift region (DDR) – A DDR diode has a p+pnn+
structure that consist of two drift layers, one for electrons and other
for holes on either side of the central avalanche zone.
3. Double avalanche region (DAR) – The DAR diode has a
p+nipn+ structure that consist of one drift zone sandwiched
between two avalanche zones. The electrons and holes from the
two junctions travel across the central i-region in opposite
directions and deliver power.
Applications
These diodes make excellent microwave
generators for many applications like:-
1. Parametric amplifier,
2. Parametric up converter,
3. Parametric down converter,
4. Negative resistance parametric
amplifier.
Summary
• IMPATT stands for Impact Avalanche And Transit
Time
• Operates in reverse-breakdown (avalanche)
region
• Applied voltage causes momentary breakdown
once per cycle
• This starts a pulse of current moving through the
device
• Frequency depends on device thickness
• IMPact Ionization Transit Time
• IMPATT devices can be used for oscillator and
amplifier applications
• They can be fabricated with Si, GaAs, and InP
• Can be used up 400 GHz.
• Noisy oscillator
• In general, IMPATTs have 10 dB higher AM
noise than that of Gunn diodes
• IMPATT diode is not suitable for use as a local
oscillator in a receiver.
Thank You…