Sinhgad College of Engineering, Pune -41

Department of Electronics & Telecommunication Engineering

Online sessions for Electronics Circuits 2020 - 21

Unit 1
MOSFET & ITS Analysis

S. A. KOTI
SYLLABUS :
Types of Field Effect Transistors

n-Channel JFET
» JFET
FET p-Channel JFET

MOSFET (IGFET)

Enhancement Depletion
MOSFET MOSFET

n-Channel p-Channel n-Channel p-Channel

EMOSFET EMOSFET
DMOSFET DMOSFET
(Classification of MOSFET)
3
Types of MOSFETS
N-channel P-channel
Enhancement Mode Enhancement Mode
(N-MOSFET) (P-MOSFET)

N-channel P-channel
Depletion Mode Depletion Mode
(N-MOSFET) (P-MOSFET)
 MOSFET Definition
• MOSFET - is a unipolar transistor which acts
as a voltage-controlled current device and is a
device in which current at two electrodes
drain and source is controlled by the action of
an electric field at another electrode gate
having a very thin metal oxide layer in-
between semiconductor and metal

5
 Symbols: N channel E MOSFET

Figure: Circuit symbol for an enhancement-mode n-channel MOSFET.

7
Device Structure

8
• The construction of a MOSFET is a bit similar to
the FET.
• An oxide layer is deposited on the substrate to
which the gate terminal is connected. This oxide
layer acts as an insulator (sio2 insulates from the
substrate),
• Hence the MOSFET has another name as
IGFET.
• In the construction of MOSFET, a lightly doped
substrate, is diffused with a heavily doped
region.
• Depending upon the substrate used, they are
called as P-type and N-type MOSFETs.
 Device Structure
 MOS ≡ Metal-Oxide-Semiconductor structure.
 MOSFET is a four-terminal device:
 Gate (G), Source (S), Drain (D) and Body (B).
 The device size (channel region) is specified by
 channel width (W) and channel length (L).
 Two kinds of MOSFETs:
 n-channel (NMOS) and p-channel (PMOS)
devices
The device structure is basically symmetric in terms of
drain and source.
Source and drain terminals are specified by the
operation voltage.
10
Construction: N channel E MOSFET

Figure: n-Channel E MOSFET showing channel length L and channel width W.

11
Channel Length Modulation
• Channel Length Modulation (CLM) is a
shortening of the length of the
inverted channel region with increase in
drain bias for large drain biases.

• It occurs when transistor is in Saturation

region. i.e. Saturation region, 𝑉𝐺𝑆>𝑉𝑡ℎ
and 𝑉𝐷𝑆> 𝑉𝐺𝑆 - 𝑉𝑡ℎ

• 𝐼𝐷 increases slightly with increasing 𝑉𝐷𝑆 .

• The pinch-off point moves toward the
source as 𝑉𝐷𝑆 increases.

• The length of the channel becomes
shorter with increasing 𝑉𝐷𝑆.
Different regions of operation
1. Cut off region – A MOS device is said to be operating when the gate-to-source voltage is less
than Vth.
• Thus, for MOS to be in cut-off region.
• Cut-off region is also known as sub-threshold region. In this region, the dependence of current
on gate voltage is exponential. The magnitude of current flowing through MOS in cut-off
region is negligible as the channel is not present. The conduction happening in this region is
known as sub-threshold conduction.

2. Linear or non saturation region – For an MOS, as gate voltage increases beyond threshold
voltage, channel is formed between source and drain terminals.
Now, if there is voltage difference between source and drain, current will flow. The magnitude of
current increases linearly with increasing drain voltage. The current is, then, represented as a
linear function of gate-to-source and drain-to-source voltages.
That is why, MOS is said to be operating in linear region.

3. Saturation Region – For an MOS, at a particular gate and source voltage, there is a particular
level of voltage for drain, beyond which, increasing drain voltage seems to have no effect on
current. When a MOS operates in this region, it is said to be in saturation.
NMOS PMOS
oVTN is POSITIVE oVTP is NEGATIVE
oVGS > VTN to turn on oVSG > |VTP| to turn on
oTriode/non-saturation oTriode/non-saturation
region region

oSaturation region oSaturation region

oVDSsat = VGS - VTN oVSDsat = VSG + VTP

 Simplified I – V Equations
Cut-off: VGS< VT
ID = I S = 0
Triode: VGS>VT and VDS < VGS-VT
ID = kn’(W/L)[(VGS-VT)VDS - 1/2VDS2]
Saturation: VGS>VT and VDS > VGS-VT K=
ID = 1/2kn’(W/L)(VGS-VT)2

where kn’= (electron mobility)x(gate capacitance)

= mn(eox/tox) …electron velocity = mnE
and VT depends on the doping concentration and gate material used
DC LOAD LINE

VDS = VDD - IDRD
Applications
MOSFETs are used in digital integrated circuits, such as microprocessors.
Used in calculators.
Used in memories and in logic CMOS gates.
Used as analog switches.
Used as amplifiers.
Used in the applications of power electronics and switch mode power supplies.
MOSFETs are used as oscillators in radio systems.
Used in automobile sound systems and in sound reinforcement systems.
THANK YOU