Types of Field Effect Transistors

n-Channel JFET
FET JFET p-Channel
JFET
MOSFET (IGFET)

Enhancement Depletion
MOSFET
MOSFET

n-Channel p-Channel n-Channel p-Channel

EMOSFET
EMOSFET DMOSFET DMOSFET

(Classification of MOSFET)
 FET Vs BJT
Few important advantages of FET over conventional Transistors
1. Unipolar device: operation depends on only one type of charge carriers
(h or e)
2. Voltage controlled Device (gate voltage controls drain current)
3. Very high input impedance (109-1012 )
4. Source and drain are interchangeable in most Low-frequency
applications
5. Low Voltage Low Current Operation is possible (Low-power
consumption)
6. Less Noisy as Compared to BJT
7. No minority carrier storage (Turn off is faster)
8. Self limiting device.
9. Very small in size, occupies very small space in ICs
10. Low voltage low current operation is possible in MOSFETS.
 Introduction to
JFET
• Unipolar device (one polarity of charge
carrier)
• Voltage controlled (gate voltage controls
drain current)
• High input impedance (109-1012 )
• No minority carrier storage
• Source and drain are interchangeable in
most low-frequency applications
 JFET : SYMBOLS

Drain
Drain

Gate
Gate

Source
Source

n-channel JFET p-channel JFET

The junction
FET
JFET
ConstructionThere are two types of JFET’s: n-channel and p-
channel.
The n-channel is more widely used.

There are three terminals: Drain (D) and Source (S) are connected to n-
channel Gate (G) is connected to the p-type material
JFET Operating Characteristics
There are three basic operating conditions for a JFET:

A. VGS = 0, VDS is a minimum value depending on IDSS and the

drain and source resistance
B. VGS < 0, VDS at some positive value and
C. Device is operating as a Voltage-Controlled Resistor

For an n channel JFET, VGS may never be positive*

For an p channel JFET, VGS may never be negative*
• Operation
• the reverse-biased gate junction produced a depletion layer in the region of the
channel
• the gate volt controls the thickness of the depletion layer and hence the thickness of the
channel
• consider an n-channel device
• the gate will always be negative with respect to the source to keep the junction
between the gate and the channel reverse- biased
• making the gate more negative increases the thickness of the depletion layer, reducing
the width of the channel – increasing the resistance of the channel.
Operation of JFET at Various Gate Bias Potentials

Figure: The nonconductive depletion region becomes broader with increased reverse
bias. (Note: The two gate regions of each FET are connected to each other.)
 Output or Drain (VD-ID) Characteristics of n-
JFET

Figure: Circuit for drain characteristics of the n-channel JFET and its Drain
characteristics.
Non-saturation (Ohmic) V    V 
DS  GS P
Region: 
2 I  V 2 
The drain current is given I  DSS
2   V V V 
 DS
 DS

 2  
D V P

by P 
GS
V
Saturation (or Pinchoff)  V  

Region: V DS   GS P 
I  V   2
I  DSS   V 
2
 V 
  V GS and I  I  1 
D V 2 P  GS 
P    D V

  P
Where, IDSS is the short circuit drain current, VPis the pinch
DSS off
voltage
Simple Operation and Break down of n-Channel
JFET

Figure: n-Channel FET for vGS =

0.
N-Channel JFET Characteristics and Breakdown

Break Down
Region
Transfer (Mutual) Characteristics of n-Channel JFET

 V 2 IDSS

I  I  1  
DS DSS VGS
 P 

VGS (off)=VP

Figure: Transfer (or Mutual) Characteristics of n-Channel

JFET
JFET Transfer Curve
This graph shows the value of ID for a given value of VGS
• FET output
characteristics
 JFET uses
• Small Signal Amplifier (In Saturation region)

• Voltage Controlled Resistor (In Ohmic

region)

• Switch (In cut off region)

THANK YOU