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CONTINUOUS
Digital
The quantities are represented not by
proportional quantities but by symbols
called digits.
Example:
digital watch
Discrete (step by step)
Advantages of Digital Techniques
1. Easier to design.
2. Information storage is easy
3.Accuracy & Precision are greater
4. Operation can be Programmed
5. Less affected by noise
6. Can Fabricated on IC.
Limitations of Digital techniques
THE WORLD
IS MAINLY ANALOG
Representing Binary Quantities
Logic 1: Logic 0:
Representing Binary Quantities
Logic 1: Logic 0:
Representing Binary Quantities
Logic 1: Logic 0:
Representing Binary Quantities
Logic 1: Logic 0:
Representing Binary Quantities
Logic 1: Logic 0:
DATA
REPRESENTATION
Standard Digital Codes
Computers process information in digital form. Characters are
assigned a 7 or 8 bit code to indicate its character. This 7 or 8 bit code
becomes a number (usually hexadecimal) that the computer can work
with. The characters stored in a computer include the following:
A
B A+B=out
A B Out
0 0 0
0 1 1
Truth Table:
1 0 1
1 1 1
2. AND Gate
A
B AB=out
A B Out
0 0 0
Truth Table: 0 1 0
1 0 0
1 1 1
2. NOT Gate or Inverter
A A
A Out
0 1
Truth Table: 1 0
UNIVERSAL GATES
2. NAND Gat
A
B AB=out
A B Out
0 0 1
Truth Table: 0 1 1
1 0 1
1 1 0
UNIVERSAL GATES
2. NOR Gate
A
B A+B=out
A B Out
0 0 1
0 1 0
Truth Table:
1 0 0
1 1 0
BOOLEAN ALGEBRA
Post. 2 (a)X+0 = X (b)X * 0 = 0
Theorem 2 (a)X+1 = 1
(b)X * 1 = X
Theorem 1 (a)X+X = X
(b)X * X = X
Post. 5 (a)X+X = 1
(b)X * X = 0
Commulative: (a)X + Y = Y + X (b)XY = YX
Associative: (a) X + (Y+Z)=(X+Y)+Z
(b)X(YZ)=(XY)Z
Distributive: (a)X(Y+Z)=XY + XZ
(b)X+YZ=(X+Y)(X+Z)
De Morgan: (a)(X+Y)=X Y
(b)(XY)=X + Y
Absorption: (a)X + XY = X
(b)X(X+Y)=X
Involution: X=X
ANOTHER PRESENTATION:
__
X = X’
Example:
_
A*A = A’ *A = 0
EXAMPLES:
1. Simplify the expression :
y =AB’D + AB’D’
= AB’(D+D’) by Postulate 5 a
= AB’
2. Z = (A’+B) (A+B)
= A’A +A’B + BA +BB by dist. Property
= 0 +A’B + AB + B by Post. 5b : Th. 1b
= B (A’ +A) + B by factoring
= B + B by theorem 1a
Z= B
Sum – Of – Products Form:
(SOP)
- each of these SOP expressions
consists of two or more AND
terms (products) that are Ored
together.
Examples:
1. ABC + A’BC’
2. AB= A’BC’ + C’D’ +D
3. A’B +CD’+EF+GK+HL’
Product – Of – Sums Form(POS)
- it consists of two or more OR
terms (sums) that are ANDed
together.
Examples:
1. (A + B’ +C) ( A+C)
2.(A+B’)(C’+D)F
3.(A+C)(B+D’)(B’+C)(A+D’+E’)
3. Z = ( A + B’ +C )’
= A’ [ ( B’*C)’]
=A’ [ B’’+C’ ]
= A’ [ B + C’ ]
= A’B + A’C’
4. W= [(A+BC)(D+EF)]’
= (A+BC)’ + (D+EF)’
= A’ (BC)’ + D’ (EF)’
= A’ ( B’+C’) + D’(E’+F’)
=A’B’ +A’C’ +D’E’ +D’F’
Seat Work:
1. Out = ABCDE
2. OUT = ABCD
UNIVERSALITY OF NAND & NOR GATES
Karnaugh map
Step 1:
Choose an element of ON-set not already covered by an implicant
Step 2:
Find "maximal" groupings of 1's and X's adjacent to that element.
Remember to consider top/bottom row, left/right column,
adjacencies. (always a power of 2 number of elements).
Repeat Steps 1 and 2 to find all prime implicants
Step 3:
Revist the 1's elements in the K-map. If covered by single prime
implicant, it is essential, and participates in final cover. The 1's it
covers do not need to be revisited
Step 4:
If there remain 1's not covered by essential prime implicants, then
select the smallest number of prime implicants that cover the
remaining 1's
Simplification of Boolean
Functions
A. The MAP METHOD
* 2 Variables : A, B
10 10
A’ B’ A B’
10 10
A’ B AB
Example a:
Example a:
OUT = A’B’ + AB
3 VARIABLES:
3 VARIABLES:
OUT = A’BC’+ABC’+A’BC+ABC
=B
OUT = A’B’C’ + A’B’C + AB’C’ +AB’C
= B’
3 VARIABLES:
OUT = A’C’+A’B+AC+BC
WORDED PROBLEM:
1.) A 4-bit number is represented
as A3 A2 A1 A0, where A3 A2
A1 and A0 represent the
individual bits with A0 equal to
the LSB. Design a logic circuit
that will produce a HIGH output
whenever the binary number is
greater than 0010 and less than
1000.
Seat work :
Figure 2. Shows a diagram for an automobile
alarm circuit used to detect certain
understanding conditions. The three switches
are used to indicate the status of the door by
the driver’s seat, the ignition, and the
headlights, respectively. Design the logic
circuit with these three switches as inputs so
that will be activated whenever either of the
following conditions exists:
* The headlights are on while the ignition is
off.
* The door is open while the ignition is on.
LET D = DOOR
I = IGNITION
L = LIGHT
3 VARIABLES:
Experiment No. 1
Combinational Logic Circuit
General Objectives:
1. To be able to understand the
basic principles of Logic Circuit
and Switching theory and its
principles.
Worded Problem:
“X”
- IT IS EITHER
LOGIC 1 OR
LOGIC 0
ENCODERS
Edge-Triggered Flip-flops
An edge-triggered flip-flop
changes states either at the
positive edge (rising edge) or
at the negative edge (falling
edge) of the clock pulse on the
control input. The three basic
types are introduced here: S-
R, J-K and D.
The S-R, J-K and D inputs are called synchronous
inputs because data on these inputs are
transferred to the flip-flop's output only on the
triggering edge of the clock pulse.On the other
hand, the direct set (SET) and clear (CLR) inputs
are called asynchronous inputs, as they are inputs
that affect the state of the flip-flop independent of
the clock. For the synchronous operations to
work properly, these asynchronous inputs must
both be kept LOW.
Edge-triggered S-R flip-flop
As S = 1, R = 0. Flip-
flop SETS on the
rising clock edge.
Edge-triggered J-K flip-flop
Edge-triggered D flip-flop
Pulse-Triggered (Master-Slave) Flip-flops
Data Lock-Out Flip-flops
The data lock-out flip-flop is similar to the pulse-triggered (master-
slave) flip-flop except it has a dynamic clock input. The dynamic
clock disables (locks out) the data inputs after the rising edge of the
clock pulse. Therefore, the inputs do not need to be held constant
while the clock pulse is HIGH.
The logic symbols of S-R, J-K and D data lock-out flip-flops are
shown below. Notice they all have the dynamic input indicator as
well as the postponed output symbol.
Operating Characteristics
Propagation Delay Time - is the interval of time
required after an input signal has been applied
for the resulting output change to occur.
Ring Counters
Johnson Counters
Shift Register Counters
Johnson Counters
Sequential Logic Circuits
S R Q(next) Q Q(next) S R
0 0 Q 0 0 0 X
0 1 0 0 1 1 0
1 0 1 1 0 0 1
1 1 ? 1 1 X 0
J K Q(next) Q Q(next) J K
0 0 Q 0 0 0 X
0 1 0 0 1 1 X
1 0 1 1 0 X 1
1 1 Q'
1 1 X 0
Continuation…
EXCITATION
TABLE
CHARACTE- Q
Q(next) D
RISTIC
TABLE
0
0 0
D Q(next) 0
1 1
0 0 1
0 0
1 1 1
1 1
T Q(next) Q
Q(next) T
0 Q 0
0 0
1 Q' 0
1 1
1
0 1
1
1 0
Analysis of
Sequential Circuits
00 11 01 0 0
01 11 00 0 0
10 10 11 0 1
11 10 10 0 1
Figure 5. State
Diagram of
circuit in Figure
4.
NAME STATE DIAGRAM
SR
JK
00 00 01
01 10 01
10 10 11
11 11 00
0 0 0 X
0 1 1 X
1 0 X 1
1 1 X 0
Flip-flop
Present State Next State Input Inputs
Q0 Q1 Q0 Q1 x J0K0 J1K1
00 00 0 0X 0X
00 01 1 0X 1X
01 10 0 1X X1
01 01 1 0X X0
10 10 0 X0 0X
10 11 1 X0 1X
11 11 0 X0 X0
11 00 1 X1 X1
J0 = Q1*x' K0 = Q1*x
J1 = x K1 = Q0'*x' + Q0*x = Q0¤x
Example 1.4 Design a sequential circuit whose state tables are
specified in Table 12, using D flip-flops.
00 00 01 0 0
01 00 10 0 0
10 11 10 0 0
11 00 01 0 1
0 0 0
0 1 1
1 0 0
1 1 1
Table 14. Excitation table
Flip-
Present flop
State Next State Input Inputs Output
Q0 Q1 Q0 Q1 x D0 D1 Z
00 00 0 0 0 0
00 01 1 0 1 0
01 00 0 0 0 0
01 10 1 1 0 0
10 11 0 1 1 0
10 10 1 1 0 0
11 00 0 0 0 0
11 01 1 0 1 1
Figure 16. Karnaugh maps
The simplified Boolean expressions are:
D0 = Q0*Q1' + Q0'*Q1*x
D1 = Q0'*Q1'*x + Q0*Q1*x + Q0*Q1'*x'
Z = Q0*Q1*x
Figure 17. Logic diagram of the sequential circuit.
(Solution at the Handouts)
SeatofWork:
Design Counters
This example is taken from T. L. Floyd, Digital Fundamentals, Fourth Edition,
Macmillan Publishing, 1990, p.395.
Chapter 6
Combinational Logic Design Practices
Adders, subtractors,
ALUs
Source:http://iweb.tntech.edu/oelkeelany/31
10S07/lectures/Lec5-10.ppt
Prev…
XOR (2-level, 3-level)
Equivalent symbols
XNOR
Parity Circuits (Odd, even)
Daisy chain
Tree
Comparators
Iterative
Parallel
Adders/Subtractors
Half Adder
Full Adder
Ripple Adder
Full Subtractor
Ripple Subtractor
Adder/ Subtractor Circuit
Half Adder: adds two 1-bit
operands
Truth table :
X Y HS=(X+Y) CO X
0 0 0 0 HS
Y
0 1 1 0
1 0 1 0 CO
1 1 0 1
HS X Y
CO X Y
Full Adders: provide for carries
between bit positions
Basic building block is “full adder”
1-bit-wide adder, produces sum and carry outputs
Truth table:
Full Adders: provide for carries
between bit positions
Basic building block is “full adder”
1-bit-wide adder, produces sum and carry outputs
Truth table:
X Y Cin S Cout
0 0 0 0 0
0 0 1 1 0
0 1 0 1 0
0 1 1 0 1
1 0 0 1 0
1 0 1 0 1
1 1 0 0 1
1 1 1 1 1
Full Adders: provide for carries
between bit positions
Basic building block is “full adder”
1-bit-wide adder, produces sum and carry outputs
Truth table:
X Y Cin S Cout
S is 1 if an odd number 0 0 0 0 0
of inputs are 1. 0 0 1 1 0
0 1 0 1 0
COUT is 1 if two or 0 1 1 0 1
more of the inputs are 1 0 0 1 0
1. 1 0 1 0 1
Recall: Table 2-3, pp32 1 1 0 0 1
1 1 1 1 1
Full-adder circuit
Full-adder circuit
Full-adder circuit
Ripple adder
Uses carry
look-ahead
internally
16-bit group-
ripple adder
Subtraction
Subtraction is the same as addition of the
two’s complement.
The two’s complement is the bit-by-bit
complement plus 1.
Therefore, X – Y = X + Y’ + 1
Full Subtractor = full adder, almost
Ripple Adder can be used as a Subtractor by inverting Y and setting the initial carry ( CIN ) to 1
Using Adder as a Subtractor
Ripple Adder can be used as a Subtractor by inverting Y and setting the initial carry ( CIN ) to 1
MSI Arithmetic Logic Units (ALU )
74x181
ALU performs Arithmetic and Logical Functions
S0
- A , B : 4 bits inputs
- S3,S2,S1,S0 : Function select S1
G
- M=0 : Arithmetic operations +=Plus , - = Minus S2
M=1 : Logical operations : += OR , . =AND S3 P
Example : M A=B
Inputs Functions CIN
S3 S2 S1 S0 M=0 M=1 A0 F0
0 0 0 0 F= A-1+CIN F=A’ B0 F1
0 1 1 0 F= A-B-1+CIN F=A XOR B’ A1 F2
1 0 0 1 F= A+B+CIN F=A XOR B B1 F3
1 0 1 1 F=(A OR B)+ CIN F=A+B
A2
1 1 0 0 F= A+A+CIN F= 0000 COUT
B2
1 1 1 1 F=A+CIN F=A
A3
B3
Buffer or Driver
A Y
YA
Symbol Equation
Truth
Table
A Y
0 0
1 1
Tri-State Buffer or Driver
E
A Y
YA
Symbol Equation
Truth
Table
A E Y
0 0 Z
Z = high
0 1 0
impedance
1 0 Z
1 1 1
Memory Storage Registers
D D
SET
Q
Qn+1 d d 1 0 0
Clk d d 0 1 1
CLR
Q d 0 1 1 Qn
Rst
d 1 1 1 Qn
0 1 1 0
1 1 1 1
Equation (rising
clock) Truth
Qn 1 Dn Table
• Q changes to D on rising edge of Clk
Basic Memory Devices
Registers
Basic
Counters
Asynchronous
Synchronous
Up / Down
Modulo Counters
MEMORY DEVICES
Source:http://notes.ump.edu.my/fkee/BEE1213/Addie/Chapt
er%209%20-%20%20Memory%20Devices.ppt
MEMORY TERMINOLOGY
Memory Cell – A device or an electrical circuit used to store a single
bit (0 or 1). Ex: flip-flop
Memory Word – A group of bits (cells) I memory that represents
instructions or data of some type. Ex: Register consisting of 8 FFs
can be considered to be a memory
Byte – A special term used for a group of 8 bits
Capacity –A way of specifying how many bits can be stored in a
particular memory device or complete memory system. Ex : memory
that can store 4096 20-bit words. Total capacity of 81,920 bits.
(4096x20). The number of words in a memory is often a multiple of
1024. 1K represent 1024=210. 1M = 220=1,048,576.
1G=230=1,073,741,824
EXAMPLE
A certain semiconductor memory chip is specified as
2K x 8. How many words can be stored on this chip?
What is the word size? How many total bits can this
chip store?
Solution: 2K = 2 x 1024 = 2048 words
Each word is 8-bits (one byte). The total number of bits
is therefore
2048 x 8 =16,384 bits
EXAMPLE
Which memory stores the most bits: a 5M x 8 memory
or a memory that stores 1M words at a word size of 16
bits?
Solution:
5M x 8 = 5 x 1,048,576 x 8 = 41,943,040 bits
1M x 16 = 1,048,576 x 16 =16,777,216 bits
The 5M x 8 memory stores more bits.
MEMORY TERMINOLOGY
Density- Another term for capacity
Address – A number that identifies the location of a word
in memory.
Read operation – the operation whereby the binary word
stored in a specific memory location (address) is sense and
then transferred to another device.
Write operation – The operation whereby a new word is
placed into a particular memory location.
Access Time – A measure of memory device’s operating
speed. It is the amount of time required to perform a read
operation.
MEMORY TERMINOLOGY
Volatile Memory – Any type of memory that requires the
application of electrical power in order to store
information. If electrical power is removed, all information
stored in the memory will be lost
Random-Access Memory (RAM) – Memory in which the
actual physical location of a memory word has no effect on
how long it takes to read from or write into that location
Sequential-Access Memory (SAM)- A type of memory in
which the access time is not constant but varies depending
on the address location.
MEMORY TERMINOLOGY
Read/Write Memory – Any memory that can be read or written
into with equal ease
Read-Only Memory (ROM). A broad class of semiconductor
memories designed for applications where the ratio of read
operations to write operations is very high.
Static Memory Devices – Semiconductor memories devices in
which the stored data will remain permanently stored as long as
power is applied, without the need for periodically rewriting the
data into memory
Dynamic Memory Devices – Semiconductor memory devices in
which the stored data will not permanently stored, even with power
applied, unless the data are periodically rewritten into memory.
MEMORY TERMINOLOGY
Main Memory – Also referred to as the computer’s
working memory. It stores instructions and data the CPU is
currently working on. It is the highest-speed memory in
the computer and is always a semiconductor memory.
Auxiliary Memory – Also referred to as mass storage
because it stores massive amounts of information external
to the main memory. It is slower in speed than main
memory and is always nonvolatile. CDs are common
auxiliary devices.
READ-ONLY MEMORIES
The read-only memory is type of semiconductor memory
designed to hold data that either are permanent or will not
change frequently.
During normal operation data can be read from ROM.
Data can be entered electrically –programming or burning-
in the ROM.
Some ROMs cannot have their data changed once they have
been programmed; others can be erased and reprogrammed
as often as desired.
A major use for ROMs is in the storage of programs in
microcomputers. When the microcomputer is turned on, it
can immediately begin executing the program stored in
ROM
ROM BLOCK DIAGRAM
ROM BLOCK DIAGRAM
Has 3 sets of signals: address inputs, control inputs, and data
outputs.
Store 16 words because it has 24=16 possible addresses, and each
word contains 8-bit because there are 8 data outputs.
This is a 16 x 8 ROM.
The most common numbers of data outputs for ROMs are 4, 8,16
bits with 8-bit word being the most common.
Control input CS-Chip Select – an enable input that enables or
disabled the ROM outputs
Many ROMs have two or more control inputs that must be active
in order to enable the data outputs so that data can be read from
the selected address.
ROM BLOCK DIAGRAM
CS input shown in figure is active-LOW; therefore, it must
be in the LOW state to enable the ROM data to appear at
the data outputs
Notice that there are no R/W input because the ROM
cannot be written into during normal operation.
THE READ OPERATION
16 different data words are stored at the 16 different address
locations.
In order to read a data word from ROM, we need to do 2
things :
Apply the appropriate address inputs
Activate the control inputs.
Ex: if we want to read the data stored at location 0111 of the ROM, we
must apply A3A2A1A0=0111 to the address inputs and then apply a
LOW to CS. The address inputs will be decoded inside the ROM to
select the correct data word, 11101101, that will appear at outputs D7
to D0. If CS is kept HIGH the ROM outputs will be disabled and will
be in the Hi-Z state.
TYPES OF ROM
MASK PROGGRAMMED ROM
Has its storage location written into by the manufacturer
according to the customer’s specifications.
A mask is used to control the electrical interconnections on the
chip.
A special mask is required for each different set of information
to be stored in the ROM.
Disadvantage – of this type of ROM is that cannot be
reprogrammed in the event of a design change requiring a
modification of the stored data
Is the most economical approach when a large quantity of
identically programmed ROMs are needed.
TYPES OF ROM
PROGRAMMABLE ROM
(PROM)
For lower-volume applications, manfacturers have
developed fusible-link PROMs that are user-
programmable; that is, they are not programmed
during the manufacturing process but are custom-
programmed by the user.
Once programmed, cannot be erased and
reprogrammed
If the programmed in the PROM must be changed,
the PROM must be thrown away.
ERASABLE
PROGRAMMABLE ROM
(EPROM)
Can be programmed by the user and can be erased
and reprogrammed as often as desired.
Nonvolatile memory that will hold its stored data
indefinitely
The programming process is usually performed by
a special programming circuit that is separate from
he circuit in which the EPROM will eventually be
working.
EPROMs are available in a wide range of capacities
and access times; devices with a capacity of 512K x
8 and can access time of 20 ns are commonplace
ERASABLE
PROGRAMMABLE ROM
(EPROM)
Disadvantages:
1. They must be removed from their circuit to be erased
and reprogrammed
2. The erase operation erases the entire chip-there is no
way to select only certain addresses to be erased
3. The erase and reprogramming process can typically take
20 minutes or more.
ERASABLE
PROGRAMMABLE ROM
(EPROM)
ELECTRICALLY ERASABLE
PROM (EEPROM)
The disadvantages of the EPROM were overcome by the
development of the electrically erasable PROM (EEPROM) as
an improvement over the EPROM.
The erasing and programming of an EPROM can be done in
circuit ( without UV light source and a special PROM
programmer unit)
Advantages: ability to erase and rewrite individual bytes (8-bit
words) in the memory array electrically.
During a write operation, internal circuitry automatically erases
all of the cells at an address location prior to writing in the new
data. This byte erasability makes it much easier to make
changes in the data stored in an EEPROM
CD ROM
The disks are manufactured with a highly reflective surface.
To store data on the disks, a very intense laser beam is focused on a very
small point on the disks. The heat from this beam burns a light diffracting
pit at that point on the disk surface.
Digital data are stored on the disk one bit at a time by burning or not
burning a pit into the reflecting coating
The digital information is arranged on the disk as a continuous spiral of
data points
In order to read the data, a much less powerful laser beam is focus onto the
surface of the disk.
At any point the reflected light is sensed as either a 1 or a 0.
This optical system is mounted on a mechanical carriage that moves back
and forth along the radius of the disk, following the spiral of data as the
disk rotates.
FLASH MEMORY
Flash memory cell is like the simple singe-transistor EPROM
cell, being only slightly larger.
Allows electrical erasability but can be built with much higher
densities than EEPROMs.
The cost of flash memory is considerably less than for
EEPROM
Rapid erase and write times.
Use bulk erase operation in which all cells on the chip are erase
simultaneously
This bulk erase process typically requires hundreds of
milliseconds compares to 20 minutes for UV EPROMs
RAM
Any memory address location is as easily accessible as
any other.
Is used in computers for the temporary storage of
programs and data.
The contents of many RAM address locations will be read
from and written to as the computer executes a program.
This requires fast read and write cycle times for the RAM
so as not to slow down the computer operation
Disadvantage – it is volatile and will lose all stored
information if power is interrupted or turned off.
Advantage- can be written into and read from rapidly
with equal ease
STATIC RAM (SRAM)
Can store data as long as power is applied to the
chip.
SRAM memory cells are essentially flip-flops that
will stay in a given state (store a bit) indefinitely
provide that power to the circuit is not interrupted.
Main applications of SRAM are in areas where only
small amounts of memory are needed or where high
speed is required.
DYNAMIC RAM (DRAM)
High capacity, low power requirement, moderate
operating speed.
DRAM stores 1s and 0s as charges on a small MOS
capacitor. Because of the tendency for these charges to
leak off after a period of time, DRAM require periodic
recharging or the memory cells; this called refreshing
the DRAM.
Have 4 times the density of SRAM
The main internal memory of the most personal
microcomputers uses a DRAM because of its high
capacity and low power consumption
Analog to Digital Conversion
Source:http://cslab.cnu.ac.kr/lecture/pro01/(5)ADC.ppt
255
Why ADC ?
Digital Signal Processing is more popular
Easy to implement, modify, …
Low cost
Consists of
Amplifier, Filters
ADC
Chap 0 256
n bits ADC
Number of discrete output
LSB size
Basic I/O Relationship Q = LSB = FS / 2n
ADC is Rationing Quantization Error
System 1/2 LSB
Reference
• Fraction: 0 ~ 1
Chap 0 257
Converter Errors
Offset Error
Integral Linearity Error
Nonlinear Error
Can be eliminated by initial adjustments Hard to remove
Chap 0 258
Terminologies
Converter Resolution Conversion Time
The smallest change Required time (tc) before the
Chap 0 259
More on Conversion Time
Example
8-bit ADC
Chap 0 260
S/H increase Performance
S/H (Sample and Hold)
Analog circuits that quickly
Chap 0 261
Analog Input Signal
Typically, Differential or Single- Matching input signal and
ended input signal of a single
polarity input range
Typical Input Range Prescaling input signal
0 ~ 10V and 0 ~ 5V using OP Amp
If Actual input signal does not
In a final stage of
span Full Input range
preconditioning circuit
Some of the converter output
Chap 0 262
Converting bipolar to unipolar
Input signal is scaled and an offset
is added
Using unipolar converter when input Add
signal is bipolar offset
Scaling down the input scaled
Adding an offset
Bipolar Converter
If polarity information in output
is desired
Bipolar input range
Typically, 0 ~ 5V
Bipolar Output
2’s Complement
Offset Binary
Sign Magnitude
…
Chap 0 263
Outputs and Analog Reference
Signal
I/O of typical ADC
Chap 0 264
Control Signals HBE / LBE
Start From CPU
From CPU To read Output word after
Initiate the conversion EOC
process HBE
• High Byte Enable
BUSY / EOC
LBE
To CPU • Low Byte Enable
Conversion is in progress
0=Busy: In progress
1=EOC: End of
Conversion
Chap 0 265
A/D Conversion Techniques
Counter or Tracking ADC
Successive Approximation ADC
Most Commonly Used
Software Implementation
Shaft Encoder
Chap 0 266
Counter
Block diagram Type ADC
Operation
Reset and Start Counter
Output of DAC
Vi < VDAC
• Continue counting
Vi = VDAC
• Stop counting
Digital Output = Output of
Counter
Waveform Disadvantage
Conversion time is varied
Chap 0 267
Tracking Type ADC
Tracking or Servo Type Can be used as S/H circuit
By stopping desired instant
Using Up/Down Counter
Digital Output
to track input signal
continuously Long Hold Time
Chap 0 268
Successive Approximation ADC
Most Commonly used in Block Diagram
medium to high speed
Converters
Based on approximating the
input signal with binary code
and then successively revising
this approximation until best
approximation is achieved
SAR(Successive
Approximation Register) holds
the current binary value
Chap 0 269
Successive Approximation ADC
Circuit waveform Conversion Time
n clock for n-bit ADC
Fixed conversion time
Serial Output is easily
generated
Bit decision are made in
serial order
Logic Flow
Chap 0 270
Dual Slope Integrating ADC
Operation Excellent Noise Rejection
T1
Integrate vi dt High frequency noise cancelled
0
t2 out by integration
Reset and integrate
0 Vr dt Proper T eliminates line noise
1 i ( AVG ) t 2Vr
Thus T v 1
Chap 0 271
Voltage to Frequency ADC
VFC (Voltage to Frequency Low Speed
Converter) Good Noise Immunity
Convert analog input High resolution
voltage to train of pulses For slow varying signal
Counter
Generates Digital output by
With long conversion
time
counting pulses over a fixed
interval of time Applicable to remote data
sensing in noisy environments
Digital transmission over
a long distance
Chap 0 272
Parallel or Flash ADC
Very High speed conversion
Up to 100MHz for 8 bit
resolution
Video, Radar, Digital
Oscilloscope
Single Step Conversion
2n –1 comparator
Encoder
Resolution is limited
Large number of
comparator in IC
Chap 0 273
Software Implementation
Implementation with Limited Practical Use
software using Availability of Good
microprocessor performance with very
Counting reasonable Cost
Shifting
Inverting
Code Conversion
…
Chap 0 274
Shaft Encoder Binary Encoder
Misalignment of mechanism
output
Encoding
Optical or Magnetic Sensor
Applications
Machine tools, Industrial
Gray Encoder
robotics, Numerical control
Misalignment causes 1 LSB
error
Chap 0 275
ASM
Asynchronous
State Machine
End of presentations!
Thank you!
God Bless…