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YOGESWARI TOLIA
KIT
DEPTT. OF ELECTRONICS
VLSI DESIGN
GATE LEVEL DESIGN
• Basic Circuit Concepts ,
• Sheet Resistance RS And Its
Concept To MOS.
• Area Capacitance Units ,
• Delays,
.
0
202
1 , VLSI DESIGN
ay
M
Introduction
• The properties of IC interconnections and the
substrate are increasingly important factors
affecting the performance and operation of an
IC. They must be considered in the IC de-sign
loop. A failure to do so may result in lower than
expected performance, higher than expected
dissipation and/or unreliable or in-correct circuit
behavior.
transmitters receivers
schematics physical
Capacitance-only
All-inclusive model
• R=Rs x L/W
B
RAB = ZRsh
Z = L/W
May 1, 2020 VLSI Design
Depending on the various IC technologies the
sheet resistance of various layers are tabled :
LAYERS 5µm 2µm 1.2µm
2ʎ
R=Rs x L/W
Rs for Nmos channel is 10k
2ʎ=5µm
R= 10 K x 5µm/5µm
=10KὨ
Forms the
capacitance Insulating medium
C A / D
C A / D
C 0INSA / D
/ D K 10 4
0 INS
C K 10 4 A
A=WXL
W=2ʎ ; L=2ʎ
2ʎ=5 µm2
Cg=4X10E-4pF/µm2 X25µm2 =10E-2pF
May 1, 2020 VLSI Design
Permittivity
Metal2
May 1, 2020
to polysilicon 0.3
VLSI Design
Capacitance
• Standard unit for a technology node is the
gate - channel capacitance of the minimum
sized transistor (2λ x 2λ), having W=L=feature
Size ,given as Cg
• This is a ‘technology specific’ value
• Aluminium Copper
– Lower resistivity
– Higher immunity to Electromigration
main cause
• Due to: VIN
– Device capacitance Vdd
– Interconnect
0
capacitance t
VOUT
delay
50% level
V C L Vdd
t C
I 2 Cox Vdd W
0
t
CSB CDB
Bulk