TRANSISTORS

Characteristics of Transistors

 Input Characteristic - Relationship between input

current and input voltage for the different Output
voltage

 Output Characteristic - Relationship between

output current and output voltage for different
input current
Common Base Configuration
Input Characteristics of CB Configuration

Output voltage-VCB
Input Voltage-VEB
Input Current-IE
Base Width Modulation or Early Effect

 Increase in reverse bias

voltage in CB junction reduces the
base width
 This increases the emitter current
since chance of recombination of
electrons with holes reduces
Output Characteristics of CB Configuration

Input Current-IE
Output voltage-VCB
Output current-IC
Common Emitter Configuration
Input Characteristics of CE Configuration

Output voltage-VCE
Input Voltage-VBE
Input Current-IB
Output Characteristics of CE Configuration

Input Current-IB
Output voltage-VCE
Output current-IC
Common collector Configuration
Input Characteristics of CC
Configuration
Output Characteristics of CC
Configuration
 Collector Current Expression

 For CB Configuration
Total Collector Current consists of
i. The part of emitter current which reaches
collector terminal α IE
ii. The leakage current due to minority
carriers across base to collector junction
on account being reverse biased.
Total Collector Current, IC = α IE + Ileakage
 IC = α IE + ICBO
Wkt IE = IC + IB
 IC = α (IC + IB ) + ICBO
 IC = α/ (1-α) IB + ICBO α /(1-α)
Collector Current Expression

 For CE Configuration
Total Collector Current, IC = α IE + Ileakge
 IC = α IE + ICBO
Wkt IE = IC + IB
 IC = α (IC + IB ) + ICBO
 IC = α/ (1-α) IB + ICBO α /(1-α)
 Let ICEO= ICBO α /(1-α)

The collector current becomes,

IC = β IB + ICEO
Collector Current Expression

 For CC Configuration
Wkt, IC = α IE + Ileakge
i.e., IC = α IE + ICBO
Wkt IE = IC + IB
 IE = α IE + ICBO + IB
 IE= IB / (1-α) + ICBO /(1-α)

The collector current becomes,

IC = IE = (β+1) IB +(β+1) ICBO
 COMPARISON OF DIFFERENT CONFIGURATION

CHARACTER CB CE CC

Input Resistance Very low about Very low about Very high about
100 Ohm 750 Ohm 750 KOhm

Output Resistance Very high about High about Very low about
450 Kohm 45 KOhm 50 Ohm

Voltage Gain About 150 About 500 Less than 1

Current Gain Less than 1 Greater than 1 Greater than 1

(20 to 250)

Application High Frequency Audio Impedance matching

application Frequency
FET (Field Effect Transistors)

 FET’s (Field – Effect Transistors) are much like BJT’s (Bipolar Junction
Transistors).

Similarities:
 Amplifiers
 Switching devices
 Impedance matching circuits

Differences:
 FET’s are voltage controlled devices whereas BJT’s are current
controlled devices.
 FET’s also have a higher input impedance, but BJT’s have higher gains.
 FET’s are less sensitive to temperature variations and because of there
construction they are more easily integrated on IC’s.
Schematic Symbol of JFET
 Construction of JFET

There are two types of JFET’s:

n-channel and p-channel.
The n-channel is more widely used.

There are three terminals: Drain (D) and Source (S)

are connected to n-channel
Gate (G) is connected to the p-type material
Construction of JFET
Basic Operation of JFET

 JFET operation can be compared to a water spigot:

 The source of water pressure – accumulated electrons at

the negative pole of the applied voltage from Drain to
Source
 The drain of water – electron deficiency (or holes) at the
positive pole of the applied voltage from Drain to Source.
 The control of flow of water – Gate voltage that controls
the width of the n-channel, which in turn controls the flow
of electrons in the n-channel from source to drain.
N-Channel JFET Layout

There are three basic operating conditions for a

JFET:
VGS = 0, VDS increasing to some
positive value

VGS < 0, VDS at some positive value

Voltage-Controlled Resistor
 VGS=0V,VDS increases to some positive
value
If the gate-source voltage is zero (VGS=0) and the
drain-source voltage is increased, three changes
occur within the transistor:
• The depletion region between the n- and p-
regions grows in size.
• The n-channel becomes smaller and resistance
is increased.
• Despite the increased resistance, the current
from the source to the drain increases due to the
increasing drain-source voltage.
Pinch-off

If VGS = 0 and VDS is further increased to a

more positive voltage, then the depletion
zone gets so large that it pinches off the n-
channel.

This suggests that the current in the n-channel

(ID) would drop to 0A, but it does just the
opposite: as VDS increases, so does ID.
 VGS<0,VDS at some positive value

• When a reverse voltage VGS is applied

between the gate and source, the width of the
depletion layers is increased. This reduces
the width of conducting channel, thereby
increasing the resistance of n-type bar.
Consequently, the current from source to
drain is decreased.
• On the other hand, if the reverse voltage on
the gate is decreased, the width of the
depletion layers also decreases. This
increases the width of the conducting
channel and hence source to drain current.
Characteristics of JFET
Drain Characteristics

Drain Current equation is

given by

VGS 2
ID  IDSS(1  )
VP
Transfer Characteristics
Voltage controlled Resistor
 The region to the left of the pinch-off point is
called the ohmic region.
 The JFET can be used as a variable resistor,
where VGS controls the drain-source resistance
(rd). As VGS becomes more negative, the
resistance (rd) increases.
MOSFET (Metal Oxide Semiconductor
Field Effect Transistor)
Two types of MOSFET
1.Depletion type MOSFET-operated in two modes
Depletion mode
Enhancement mode

2. Enhancement type MOSFET-operated in only one mode

Enhancement mode
Lay-out & Symbol-Depletion MOSFET
Working of Depletion
MOSFET
Depletion Mode Enhancement Mode
Drain & Transfer Characteristics
Lay-out & Symbol-Enhancement MOSFET

N-Channel P-Channel
Working of Enhancement
MOSFET
Drain & Transfer Characteristics