Sei sulla pagina 1di 1

High-mobility ultrathin semiconducting films prepared by spin

coating
Afzali David B. Mitzi, Laura L. Kosbar, Conal E. Murray,
Matthew Copel & Ali
ISLAH UD DIN (42618) & RASOOL BKISH
ABSTRACTS MATERIALS & METHODS’
The research for thin-film semiconductors
provide simultaneously high carrier mobility and
convenient solution-based deposition with the
resulting expectations of new technologies
(such as flexible or wearable computers, large-
area high-resolution displays and electronic
paper) and lower-cost device fabrication.

PREPARATIONS
The spin-coat deposition is based on the low-
temperature decomposition of highly soluble
hydrazinium precursors. Hydrazine is a
molecule made up of two nitrogen and two
hydrogen atoms. To dissolve the
semiconducting material, the researchers
combined a very strong hydrazine solvent with
equal numbers of chalcogen atoms and
semiconducting metal chalcogenide molecules
(such as sulphur and tin sulphide, respectively).
While hydrazine is generally not a good solvent
for metal chalcogenides, the presence of the
extra chalcogen atoms both improves solubility
and enables control over the film's final
composition and grain structure.
5N2H4 + 2S + 2SnS2 → N2(gas) + 4N2H+5 + Sn2S64-

RESULTS
Figure Device characteristics for spin-coated chalcogenide channel layers. a, Drain
current,ID,versusdrainvoltage,VD,asafunctionofgatevoltage,VG,foraspin-coatedtin sulphide channel layer, deposited from solution
(1), and having a channel length L¼14 m mandchannelwidthW¼500 m m.b, PlotsofI D and I D1/2 versus VG at constant VD ¼85V,
used to calculate current modulation, Ion/Ioff, and saturation regime mobility, msat, for the tin sulphide channel. c, Plots of ID versus
VD, as a function of VG, for a spincoated SnS1.4Se0.5 channel with L¼14 m m and W¼250 m, deposited from solution (2). d, Plots
of I D and I D1/2 versus VG at constant VD ¼85V for the SnS1.4Se0.5 film.
REFERENCES
• IBM T. J. Watson Research Center, PO Box 218,
Yorktown Heights, New York 10598, USA.
• Zaslavsky, A. et al. Ultrathin silicon-on-insulator
vertical tunneling transistor. Appl. Phys. Lett. 83,
1653–1655 (2003).
• Sirringhaus, H. et al. High-resolution inkjet printing
of all-polymer transistor circuits. Science 290,
2123–2126 (2000).
• Afzali, A., Dimitrakopoulos, C. D. & Breen, T. L.
High-performance, solution-processed organic thin
film transistors from a novel pentacene precursor.
J. Am. Chem. Soc. 124, 8812–8813 (2002).

RESEARCH POSTER PRESENTATION DESIGN © 2015

www.PosterPresentations.com

Potrebbero piacerti anche