Semiconductor devices and Rectifiers

• Introduction to Semiconductor devices and its classification

• Structure of P – N junction diode

• P – N junction diode characteristics

• Half – wave rectifier

• Concept of Ripple factor, Efficiency and Voltage regulation

• Full – wave rectifier

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Introduction to Semiconductors

 If the no. of valence electrons are exactly 4, the material electrical

properties lie in between those of conductors and insulators, such
materials are called as semiconductors. Eg., Germanium, Silicon.

 Semiconductor materials are having negative temperature co-

efficient resistance. As temperature increases, resistance
decreases and acts as conductor and vice versa.

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Classification of semiconductors

 Intrinsic semiconductor

 Extrinsic semiconductor

• P – Type semiconductor

• N – Type semiconductor

 An intrinsic semiconductor is one which is made from the

semiconductor material in its extremely pure form.

 Common examples of intrinsic semiconductors are pure silicon

and germanium.

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 Pure silicon crystal (intrinsic semiconductor)

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 The properties of an intrinsic semiconductor can be significantly
altered by adding to it some impurities.

 The process of adding impurity is called as doping. The impurity

added is known as doping agent.

 The semi conductor to which impurity is added is known as

impure or extrinsic semiconductor.

 Usually the doping agents are either pentavalent atoms having 5

valency electrons such as arsenic, phosphorous or trivalent atoms
have 3 valency electrons such as gallium, indium aluminum, boron
etc.
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 Depending of the type of doping agent used, the extrinsic
semiconductors are classified into

• P – Type semiconductor

• N – Type semiconductor

 When a small quantity of trivalent impurity is added to intrinsic

semiconductor, then it called as P- Type semiconductor.

 When a small quantity of pentavalent impurity is added to intrinsic

semiconductor, then it called as N- Type semiconductor.

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 Pure silicon crystal (intrinsic semiconductor)

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 Structure of P – N Junction Diode

 It consists of a N-type semiconductor layer and P-type

semiconductor layer. The two layers are sandwiched and formed
as p-n junction diode.

 When a junction b/w a P and N type material is formed, the carriers

(free electrons and holes) diffuse from a higher-concentration side
to lower-concentration side and formed depletion region at the
junction.

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 Based on the applied voltage, there are three possible “biasing”
conditions for the P-N Junction Diode, which are as follows:

 Zero Bias – No external voltage is applied to the PN junction diode.

 Forward Bias– The voltage potential is connected positively to the

P-type terminal and negatively to the N-type terminal of the Diode.

 Reverse Bias– The voltage potential is connected negatively to the

P-type terminal and positively to the N-type terminal of the Diode.

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P – N junction with No Bias

 In this case, no external voltage is applied to the P-N junction

diode; and therefore, the electrons diffuse to the P-side and
simultaneously holes diffuse towards the N-side through the
junction, and then combine with each other.

 Due to this an electric field is generated by these charge carriers.

The electric field opposes further diffusion of charged carriers so
that there is no movement in the middle region.

 This region is known as depletion width or space charge.

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P – N junction with Forward Biasing

 In the forward bias condition, the negative terminal of the battery

is connected to the N-type material and the positive terminal of the
battery is connected to the P-Type material.

 Due to the attractive force that is generated in the P-region the

electrons are attracted and move towards the positive terminal.
Simultaneously the holes are attracted to the negative terminal of
the battery.

 By the movement of electrons and holes current flows.

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P – N junction with Reverse Biasing

 When a diode is connected in a Reverse Bias condition, a positive

terminal is connected to the N-type material and a negative
terminal is applied to the P-type material.

 The positive voltage applied to the N-type material attracts

electrons towards the positive electrode and away from the
junction, while the holes in the P-type end are also attracted away
from the junction towards the negative electrode.

 The result is that a high potential barrier is created thus preventing

current from flowing through the semiconductor material.
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