TRAPATT

AND  Submitted by:-

IMPATT 


ECE-31/16
ECE-33/16
 ECE-34/16
 ECE-35/16
 ECE-36/16
 ECE-37/16
 ECE-38/16
 ECE-39/16
trapatt
TRAPATT DIODE
TRAPATT diode:- Trapped Plasma Avalanche Triggered Transit mode
device.

What is TRAPATT ?
• Its a p-n junction diode characterized by the formation of a trapped
space charge plasma within the junction region.

• It was first reported by Prager in 1967.

• lt is a high efficiency microwave generator

• The TRAPATT diode is typically represented by a current pulse generator

and the diode’s depletion-layer capacitance.
COMPARISON WITH TEDS
 Transferred electron devices generate relatively low-power
microwave radio signals.
 There are no p-n junctions in TEDs so frequency is a function of
load and natural frequency of device.
 In TRAPATT diode there is an ability to switch very high currents
with less than a nanosecond rise and fall times (transition
times).
TYPICAL PARAMETERS
• Power = 1.2 kw at 1.2 GHz
• Maximum efficiency = 75% at 0.6 GHz
• Frequency range (operating) = 0.5 GHz to 50 GHz
STRUCTURE
1. Typically silicon with N type depletion region width = 2.5 to 12.5
micro m.
2. p+ region = 2.5 to 7.5 micro m.
3. Diode’s diameter range = 50 to 750 micro m.
PRINCIPLE OF OPERATION
• A high field avalanche zone propagates through the diode and
fills the depletion layer with a dense plasma of electrons and
holes that become trapped in the low field region behind the
zone.

• The basic operation of the oscillator is a semiconductor p-n

junction diode reversed biased to current densities well in excess
of those encountered in normal avalanche operation.
OPERATION
• A long time is required to remove the
plasma as shown in graph from D to E.

• At point E the plasma is removed, but

residual charge of electron in one end of
the depletion region and residual charge
of holes in other ends.

• At point F all the charges that was

generated has been removed. The point F
to G the diode charges like capacitor.
• The TRAPATT mode can operate at low frequencies
since discharge time of plasma can be considerably
greater than the nominal transit time of the diode at
high field.
• The TRAPATT mode is known as transit-time mode tn
the real sense that the time delay of carriers 1n transit
(i.e. the time between injection and collection) ts
utilized to obtain a current phase shift favorable for
oscillation.
• RF power is delivered by the diode to an external load
when the diode is placed in a proper circuit with the
load.
ADVANTAGES & DISADVANTAGE OF
TRAPATT DIODE
Advantages:
• More suitable for pulsed operation

• 15 to 40% efficiency is obtained

• It can operate between 3 to 50GHz

Disadvantages:
Noise figure is greater than 30dB, it is also very noisy.

APPLICATION:
• Low power Doppler radars or local oscillators
for radars.
• Landing system
• Radio altimeter
• S-band pulsed transmitters for phase array radar system.
REFERENCES
• MICROWAVE AMPLIFIERS AND OSCILLATORS John W. Lunden, Jennifer E.
Doyle.
• Power frequency characteristics of TRAPATT diode mode- D.L.
Scharfetter (234 oct 1969).
• Pozar, David M. (1993). Microwave Engineering Addison-Wesley
Publishing Company.
• Microwave devices and circuits- S.Y. Liao.
IMPATT
IMPATT Diode : Microwave diode
IMPATT Diode :- Impact Ionisation Avalanche Transit Time Diode

What is IMPATT?
• It is an RF semiconductor device used for generating microwave
radio frequency signals.
• Also known as Read Diode. Proposed by Read.
• Also to generate signals typically from about 3GHz to 100GHz or
more.

Advantage
• High power handling capacity.
Disadvantage
• It has phase noise.
IMPATT Diode basics structure
• Intrinsic layer is placed between the P-type and N-type region.

• It is designed for optimum operation in reverse bias so that avalanche

multiplication occur within the high filed region.

• Schottky barrier format is used as the injecting junction.

• Vertical structure is the most common

method of fabrication where there is
vertical current flow.

• For this format of diode, the layers are

generally grown epitaxially. Where very
high frequency devices are to be made
layers can become very thin.
• For typical Read diode the N-layer may be only 1 to 2 micro meter thick and
the intrinsic layer may be between 2 and 20 micro meter thick. For very high
frequency operation, these dimensions are reduce.

• The dopants needed for the different layers may be introduced using one of
a number of techniques including diffusion, ion implantation or even in-situ
doping during the epitaxial growth process for a given layers.

• Apart from the vertical fabrication,

horizontal structure may also be
used, using more traditional planer
technology.
WORKING PRINCIPLE:-
• Impact have [P+ P N N+] structure.
If reverse breakdown happens in between P-N
region, highest electric field will produce for
which extreme charge carriers are generated
(holes – e-).

• Holes get drifted P+ region

e- moves towards n+ region
 Advantage Disadvantage
• It has high power capability • High noise.
compare to other diodes.

• Output is reliable compared to • High operating current

other diodes.

Application:-
• Low power radar system.

• Intruder alarm.
CHARACTERISCTICS
• It conducts in the forward direction once the turn on voltage has
been reached.

• In reverse direction it blocks current flow, until the diode breakdown

voltage reached. In this point avalanche breakdown occurs and
current flows in the reverse direction.

• Impatt operated under reverse bias condition. So that avalanched

breakdown occurs.

• Breakdown occurs in the region very close to P+. The electric field
at the PN junction is very high.

• Under this circumstances any carriers are accelerated very quickly.

• As a result they collide with the crystal and free other carrier.

• This process gives rise to what is called avalanche breakdown.

Operation of IMPATT

IMPATT diode consist of two areas:-

1. Avalanche region or injection

region
2. Drift region
Avanalche region:-

It creates carriers which may be either holes of electron.

Drift region:-

It is the region where the carriers move across the diode taking certain
amount of time dependent upon thickness.
DIFFERENCE BETWEEN IMPATT AND
TRAPATT
IMPATT DIODE
• Operating Frequency range is
between 4GHz to 200GHz
• Principle of operation:
Avalanche multiplication
• Efficiency: 3% CW and 60%
pulsed below 1GHz, more
efficient and more powerful
than gunn diode type
TRAPATT DIODE
• Operating Frequency range is
between 1 to 3GHz
• Principle of operation:
Plasma avalanche
• Efficiency: 35% at 3GHz and
60% pulsed at 1GHz
• Impatt diode Noise Figure: 30dB
• PROBLEMS
High noise figure, high operating
current, high spurious AM/FM noise.
• This microwave diode has high
power capability compare to
other diodes, Output is reliable
compare to other diodes.
• Voltage controlled Impatt
oscillators, cavity stabilized
impatt diode oscillators
• Trapatt diode Noise Figure: Very
high NF of the order of about
60dB
• PROBLEMS
Not suitable for CW operation due
to high power densities, high NF of
about 60dB, upper frequency is
limited to below millimeter band
• Higher efficiency than impatt,
very low power dissipation
• Used in microwave beacons,
instrument landing systems
THANK YOU