SYNTHESIS AND ELECTRICAL

CHARACTERIZATION OF CuS AND ZINC

DOPED CuS THIN FILM BY DIP COATING
DEPOSITION TECHNIQUE
Jil Rose Perutil, Martin Dias, Dr.Vimalkumar T. V
Research and P G Department of physics
St Thomas College (autonomous)Thrissur,
Kerala-680001
Mail id: jilrose00@gmail.com
 THIN FILM
•The history of thin films probably started about three
centuries ago, with the observation of the fascinating
colors of thin films of oil floating on the surface of
water.

•A familiar example is the house hold mirror, which

typically has a thin metal coating on the back of a
sheet of glass to form reflective interference.
•Any coating less than about one micrometer
can be called a thin film. When a coating is to be
called a thin film some necessary conditions
have to be satisfied. The material or coating
should be on a clean surface, called substrate.

•A thin film can be treated as a two dimensional

specimen because its third dimension namely
the thickness is very small compared with the
other two dimensions.
 APPLICATIONS
• Optical coatings

• Semiconductor industry

• Flat panel displays

• Sensors

• super capacitors
THIN FILM DEPOSITION TECHNIQUE

Physical deposition Chemical deposition

technique technique
DIP COATING TECHNIQUE
•Immersion

•Deposition

•Drainage

•Evaporation
DIP COATING TECHNIQUE
 CHEMICALS USED
Copper chloride( ) - 170.48g

Thiourea ( CS( - 76.12g

Triethylamine(TEA)

Sodium hydroxide(NaOH) – 40g

Ammonium hydroxide(NH4OH) - 25%

Zincsulphate heptahydrate( ) - 287.54g

DIP COATING SETUP
VARYING NO. OF DIPS FOR
TEMPERATURES - 30 ⁰C ,
- 40 ⁰C ,
- 50 ⁰C
Sl. No. of dips Tempe Dip
No rapture duration Thin film photo
c)

1 5 30 3
C1

C4
2 20 30 3
Sl. No. of Tempe Dip
No dips rapture duration Thin film photo
c)

CUS1
1 5 40 3

2 20 40 3 CUS4
 No. of dips Tempe Dip
Sl. rapture duration Thin film photo
No c)

1 5 50 3 CU1

2 20 50 3 CU4
VARYING DIP DURATION
Sl. No. of Tempe Dip
No dips rature duration Thin film photo
c) (min)

CU3
1 15 50 3

3 15 50 7 CUSA2
 Zn DOPED CuS FILMS - BATH
Firstly 7ml of 1M copper (II) chloride solution was mixed with 2ml
of TEA and 20ml of ( ) ammonium hydroxide.
After that 15ml of 1M NaOH solution and zinc sulpahte
heptahydrate (say 0.1ml) was mixed into the solution. Ultimately
9ml of thiourea was added and distilled water was added to make
it to 100ml. Thus chemical bath for Zn doped CuS thin film
preparation is done.
Sl.no No. of Amount of Tempera Thin film
dips dopant ture
(ml) _)

1 20 0.5 50 Cuz1

2 20 1 50 Cuz2

5 20 5 50 Cuz5
 RESULTS
• The thin film variation did by changing no. of dips gives us a
result that as no. of dips increases we get more dense and
homogenous films.

• When temperature of the film is increase the film becomes

more stable.

• The effect of dip duration was not so promising. Because

when we increased the dip duration to 7minutes, the
precursor solution gets sedimented due to this large time.
XRD PATTERN OF CuS FILM
Zn DOPED CuS FILM
ELECTRICAL STUDIES
 temperature
325

15 dip
320
temperature (kelvin)

315

310

305

300
66 >200 >200
resistance (Mohm)
KΩ
 temperautre
325

20 dip
320
temperautre (kelvin)

315

310

305

300
35 200 >200
resistance (Mohm)
KΩ
 molarity
Zn doped CuS

3.0

2.5
A
M
2.0
molarity (M)

O
U
N 1.5

T
1.0

0.5

6 8 10 12 14 16 18 20
KΩ
Resistance (Mohm)
 CONCLUSION
The CuS thin film was prepared by applying
varying conditions such as changing the no. of dips, the film
temperature and dip duration, The films show less electrical
resistivity as the temperature and no. of dips increases.

• While the Zn doped CuS thin film were prepared by

changing the amount of dopant on the CuS thin film. The
addition of dopant increases its transparency. They show
comparatively less resistivity when compared to CuS films.

• The XRD pattern of CuS film shows broad hump due to

amorphous glass substrate and annealed sample shows short
intense peaks.
 REFERENCE
•M S Shinde, P B Ahirrao, I J Patel, R S Patel, Indian Journal of pure and
applied physics,vol.50,septmber 2012,pp 657-660
•Jiten Tailor/Ph.D Thesis/P.G.Dept.of Physics/Sardar Patel
University/May -2014.
•P. W. Atkins and J. de Paula, Atkins Physical Chemistry, 7th ed. Oxford
University Press, New York, USA (2002)
•J. S.Chung, H. J.Sohn, J. Power Sources 108 (2002) 226.
 ACKNOWLEDGMENT
Our sincere gratitude to all faculty and P G students of physics
department of St Thomas college Thrissur.

Financial assistance by the minor project funded by university grants

commission and centre for potential excellence(CPE) funded by UGC are
gratefully acknowledged. Authors also wish to acknowledge IQAC of St
Thomas college Thrissur.
As Dr. Feynman said "There is a plenty of
room at the bottom”, so explore it………

THANK you