Light

Amplification by
Stimulated
Emission of
Radiation
Stimulated Absorption
Spontaneous Emission
Stimulated Emission

laSEr
 Tunable laser
• A laser in which the frequency of the emitted radiation can be
changed across some range in the UV , visible and IR regions
of the electromagnetic spectrum, is called a Tunable Laser.
• Tunable lasers find applications in spectroscopy, photo-
chemistry, atomic vapor laser isotope separation, and optical
communications.
 Regions of Tunable lasers:
1.Active region : For Optical gain
2.Filter region : To provide tuning of frequency
3.Phase shifter region : For fine tuning of resonant frequency

Tuning mechanisms:
1.Electric Field induced index change
2.Thermally induced index change
 TECHNIQUES TO REALIZE TUNABLE LASER DIODES:
Monolithic Structures:
From practical point of view compact and robust lasers with
simple handling are preferred. Thus Tunable lasers that are
produced on monolithically integrated devices are favoured.
Three basic monolithic architectures are :
1. DFB
2. DBR
3. VCSEL
Distributed Feedback Laser (DFB):
 1. Grating below or above the active
layer, oscillates at the single
wavelength defined by the Bragg
wavelength.
2. Tuned by changing the cavity
temperature , that alters the
refractive index.
∆n/n = ∆λ/λ
3. But a large temp. difference is
required to tune across only a few
nanometres.
4. Superior performances : Narrow
spectrum width and low noise.

Thus used as an optical signal

source in optical communication.
Response of Bragg Reflector
DFB Lasers in Market
DISTRIBUTED BRAGG LASERS(DBR)
1. Consist of several sections Grating
region outside active region.
2. Continuously tunable over approx. 2nm
range by changing current or
temperature.
3. Temp. coefficient = 0.07nm/K
Current coefficient = 0.003nm/mA
4. Stable , low noise optical sources with
small linewidth up to 10 MHz.
DBR LASER

633 nm DBR Laser

EXTERNAL CAVITY LASERS
1. External cavity diode lasers have a wavelength selective reflector, usually a
grating.
2. By adjusting the wavelength selective reflector in correct way, desired
wavelength can be produced.
3. With long cavity can produce high output powers and have narrowest line
width and are easily tunable.
4. Widely used in optical testing and measuring equipment.

However, their reliability is questionable due to their thermal and mechanical

instabilities.
QUANTUM WELL
• Quantum wells are heterostructures in which a
thin layer of one semiconductor is sandwiched
between two layers of a different semiconductor
material , there by forming a heterojunction.
• An important requirement is that the two
semiconductors have different energy gaps (and
for optical applications, also different refractive
indices).
• Quantum well devices are often fabricated
using molecular beam epitaxy.
 QUANTUM WELL LASERS

• Since the 1980s, lasers with very thin active regions, quantum well lasers,
were being developed.
• A laser diode in which the active region of the device is so narrow (7.5 – 10
Å)that quantum confinement occurs.
• Much shorter wavelengths can be obtained from quantum well lasers .
• To compensate for the reduction in active layer thickness, a small number
of identical quantum wells are often used. This is called a multi-quantum
well laser.
ADVANTAGES OVER DH SEMICONDUCTOR LASERS:

• Lower Temperature sensitivity

• Lower Threshold current
• Improved Coherency
• Reduced Line – width
• Superior stability