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Oxidation
Lithography &
Etching
Ion Implantation
Annealing &
Diffusion
Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 3-2
3.2 Oxidation of Silicon
Quartz tube
Si Wafers
Flow
controller
Si Oxide
(b) Exposure Si Si
Photo Mask
Water
Photoresist
Wafer
(a) (b)
conventional dry lithography wet or immersion lithography
SiO 2 SiO 2
(1) (1)
photoresist photoresist
SiO 2 SiO 2
(2) (2)
SiO 2 SiO 2
(3) (3)
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
(a) Isotropic wet etching (b) Anisotropic dry etching. Slide 3-10
3.4 Pattern Transfer–Etching
Gas Baffle
Gas Inlet Wafers
RF RF
Vacuum
SiO 2
n-type
diffusion layer
p-type Si
No x 2 / 4 Dt
N ( x, t ) e
Dt
N : Nd or Na (cm-3)
No : dopant atoms per cm2
t : diffusion time
D : diffusivity, Dt is the approximate distance of
dopant diffusion
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 3-16
3.6 Dopant Diffusion
Shallow Junction and Rapid Thermal Annealing
• After ion implantation, thermal annealing is required. Furnace
annealing takes minutes and causes too much diffusion of dopants
for some applications.
Sputtering target
Target material
YY deposited on wafer
YYYYY YY YYY YYYYYYYY
YYYYYYYY YYYYYY YYYY YYYYYY
YYYYYYYY YYYYYY YYYYYYYYYYYY
YYYYYYYY YYYYYY YYYYYYYYYYYY YY
Y YYYY
YYYYY YYYYYYY YYYYYYY
YYYY
YY YYYYYY YYYYYYY
YY YYYY YYYYYYYY
YYYYYYYYYYYY
YYY YYYYYY
Y YY
Si Wafer
Pump
Source
gases
Gas control
system
LPCVD Systems
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 3-22
3.7.2 Chemical Vapor Deposition (CVD)
Gas Pump
Hot Wall Parallel Plate Inlet Power leads
Plasma Electrodes
PECVD Systems
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 3-23
P-Si
UV (6) Al
SiO2 P2
SiO
(2) N+
M ask Al
(10) PSi
3 N4 Sputtering
Positive resist Al (13) Si
SiO2 UV
SiO2 UV SiO2
Lithography N+ SiO2
P-Si M as k P
SiO2 SiO2 (7) (11)Res is t Photoresist
(3) Al Al
P-Si SiO2 SiO2
Etching NSi
+ 3 N4
Arsenic implantation P Al
SiO2 SiO 2
N+
(4) Lithography
SiO2 SiO2 P
P-Si
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 3-24
(12) Si3 N4
SiO 2 SiO2 Al
(3) SiO2 SiO2 Photoresist
P-Si
Si3 N4
Arsenic implantation Al
3.10 Chapter Summary–A Device Fabrication Example SiO2
N+
SiO 2
(4)
SiO2 SiO2 P
P-Si Al
Metal (8) S iO2 S iO2
N+ (12) Si3 N4 Back side
etching SiO SiO2
(5)
2
P Al
N+ SiO2 SiO 2 metallization
P N+
2
P Dicing, wire bonding,
and packaging
(12) Si3 N4
Modern Semiconductor
Al Devices for Integrated Circuits (C. Hu) Slide 3-25
SiO2 SiO 2
N+