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Electronic circuits !

Presentation by:
Dr. W Jino Hans
Associate Professor/ECE
SSN College of Engineering
Session Objectives

 To introduce the need for Biasing


 To discuss about stability factor
 To explain Fixed bias circuit

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Session Outcomes

 At the end of the session, students will be able to


 Understand the need for Biasing.
 Classify the types of Biasing
 Analyze Fixed bias circuit and its stability factor

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Outline

• Introduction
• Need For Biasing
• Stability and stability Factor

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Biasing for BJT
• Introduction
• DC load line and AC load line
• Thermal Run-away problem
• Need for Biasing
• Types of Biasing

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Introduction
• In order to operate the transistor in active region, we
supply voltage and resistance must be properly chosen.
• The value of voltage and resistance establish set of DC
voltage VCEQ and current I CQto operate the transistor in
active region. These voltage and current are called Q-
point for transistor
• The process of giving proper supply voltage and
resistance for obtaining Q-point is called Biasing

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Biasing

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Q-Point:
• To produce distortion free output, supply voltage and
resistance must be suitably selected.
• The value of voltage & resistance establish set of DC
voltage and to operate the transistor in active region.
• These voltage and current are called ‘Q-Point’ of a
transistor.

Biasing:
• The process of giving proper supply voltage & resistance
for obtaining desired Q-Point is called biasing.

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DC load line and AC load line
• A line drawn on the output characteristic of transistor
 1 
with slope of  R  is called DC load line
c

• Q-point is chosen at the middle of load line in order to


get output signal without any distortion.
• A line drawn on the output characteristic of transistor
with slope of R AC is called AC load line
Where RL RC
R AC 
RL  RC

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DC Load line

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DC Load Line:
VCC  I C RC  VCE
VCC
• When VCE  0 ; IC 
RC
• When IC  0

VCE  VCC
• A line is drawn in the characteristic with slope  1
RC
AC Load Line:
• After drawing the DC load line, Q-point is located properly
so that the O/P will be amplified from the I/P signal
without any distortion.
• If Q-point is very close :
• To cut-off region-collector current is clipped at (-ve) half
cycle.
• To saturation region, is clipped at the portion of I/P signal.
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Continued.
• So, Q-point is chosen at the middle of load line.

R AC  RC || R L
• Slope,
 1 
CQD   
 R AC 

VCE (max)  VCEQ  I CQ R AC

VCEQ
I C  I CQ 
R AC

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Requirements of Biasing:
• Q-point should be selected at middle of the load line so that
transistor neither goes to SAT nor CUT-OFF region.
• The flow of current increases heat at junction. Minority charge
carriers are ‘Temp. dependant’ and hence increases leakage
current.
I CEO  1    I CO
• doubles for every 100C and
I CEO
• increases.
2
I C     I CEO
• Increase in shifts Q-point into Sat. region, thus changing
operation condition set by biasing circuit.
IC
• Hence thermal runaway problem should be eliminated.
• The performance of circuits should not be affected by changing
the transistor.ie, o/p current should be independent of

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Thermal runaway problem
I CEO  1    I CBO
• As temperature increases , I CEO increases as and
hence collector current increases. This in turn increases
temperature and power dissipation at junction. The
action is cumulative.
• Finally transistor gets damaged. This is called thermal
run away problem.

I CEO - collector to emitter when input junction is open

I CBO - Collector to base when input junction is open

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Thermal runaway problem
I CEO  1    I CO

I C   2   I CEO

• As temperature increases, minority charge carriers


increases &I CEO
increases; I C increases.
• Power dissipationPD  VC I C
• As IC increases,PD carrier at collector junction increases.
• This in-turn increases temp.
• This process is cumulative.
• Finally, transistor gets damaged.

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Stability Factor

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Need for Biasing
• Q-point should be selected at middle of load line
• Thermal run away problems should be eliminated
• The performance of circuit should not be altered by
changing transistor.

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Types of Biasing
• Fixed Bias
• Collector-to-base bias
• Emitter-feedback bias
• Voltage divider bias

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