Material Properties L2 Slides and Notes

ENGN3334/6334 Semiconductors
Fiona Beck
ANU Research School of Engineering
Lecture 2: Semiconductor Physics - Material Properties

Isolated atom Close packed
atoms in a crystal
Semiconductor Devices, 2/E by S. M. Sze

Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
Free
Conduction Band electron
Ec
Electron Energy Eg = Energy to break bond Free Carriers
Ev
Valance Band Hole
Law of mass action:
At thermal equilibrium:
• Generation balanced by recombination
• one electron  one hole
• The material is electrically neutral n  p  ni
Intrinsic carrier concentration
ni2  np
Law of mass action

Free electron Density of Probability of an
density at a given = electron states at x electron having that
energy that energy energy
= x
Free electron
density/concentration
in a semiconductor
Intrinsic Carrier Concentration, ni:
ni2  np
 EC  EF   EF  EV 
n  N C exp    p  NV exp   
 kT   kT 
 EC  EF   EF  EV 
n  N C exp 
2
i  NV exp  
 kT   kT 
 E C  EF  EF  EV 
ni  N C NV exp 
2

 kT 
 Eg 
ni  N C NV exp  
 2kT 
Worked example: Intrinsic Si at 300K
Eg 1.1 eV
 Eg 
ni  N C NV exp   Nc 2.9e+19 cm-3
 2kT  Nv 1.8e+19 cm-3
T 300 K
k 1.4e-23 JK-1
8.6e-5 eVK-1
|e| 1.6e-19 C
1.1 eV
ni = 1.5e+10 ~ 1e+10 cm-3

Intrinsic Fermi Level, Ei:
ni2  np
 EC  EF   EF  EV 
n  N C exp    p  NV exp   
 kT   kT 
 EC  EF   EF  EV 
N C exp     NV exp   
 kT   kT 
 EC  EF EF  EV  NV
exp    
 kT kT  N C
 NV 
 EC  EF  EF  EV  kT ln  
 C
N
kT  NV  EV  EC 
EFIntrinsic
 Ei  ln   
2  NC  2
Worked example: Intrinsic Fermi energy in Si
Ei  ln  
2  NC  2
1.1 eV Eg 1.1 eV
EF ~ 1.1/ = 550 meV Nc 2.9e+19 cm-3

2
Nv 2.7e+19 cm-3
0
T 300 K
k 1.4e-23 JK-1
8.6e-5 eVK-1
|e| 1.6e-19 C
 E g (T ) 
ni T   N C (T ) NV (T ) exp  
 2kT 
Si GaAs
Eg 1.1 eV 1.4 eV

Resistivity and Conductivity
  e n n   p p [ S  cm]
1
 [  cm]
e n n   p p 
n ,  p the electron and hole mobility

Mobility
Electric field
Collision or Scattering event
Scattered by:
Electron
• crystal lattice
• Ionised impurities
e
  c c τc = average time between collisions
m mc= conductivity effective mass of the carrier
Material properties @300K
Eg ni μn μp
-3 2 2
Material [eV] [cm ] [cm /V.s] [cm /V.s]
Copper -- 1e22 44 --
Gallium Arsenide 1.4 1e6 9200 320
Silicon 1.1 1e10 1450 500
Germanium 0.6 1e13 3900 1900
e e mec  mhc
n  c  c ,  p  c  c
me mh conductivity effective mass of the carrier
Resistivity @300K
Eg ni μn μp ρ
-3 2 2
Material [eV] [cm ] [cm /V.s] [cm /V.s] [Ω.cm]
Copper -- 1e22 44 -- ~1e-10
Gallium Arsenide 1.4 1e6 9200 320 ~1e8
Silicon 1.1 1e10 1450 500 ~1e5
Germanium 0.6 1e13 3900 1900 ~1e2
How do we increase the conductivity in semiconductors?

How do we increase the conductivity in
semiconductors?
By ‘doping’ them to increase the number

of free carriers
Impurity doping
Donor Ion Acceptor Ion

Si

One more electron One less electron
Donor
Ions
Acceptor
Ions

Energy required to ionise dopants is the ionisation or activation energy

• For Donors = ED
• For Acceptors = EA
At 300K: ED , E A  E g

N-type Si P-Type Si
Donor
Ions
Acceptor
Ions
Donor doping density ND Acceptor doping density NA
1e12 < ND < 1e18 cm-3 NA =1e12 - 1e18 cm-3
ni << ND << density of Si atoms ni << NA << density of Si atoms
n  ND p  NA
Are we still in thermal equilibrium?
Thermal Equilibrium
Extrinsic/ doped semiconductors thermal equilibrium:
• The material is electrically neutral
20
Thermal equilibrium: law of mass action applies
Intrinsic np  n 2
i
Density Fermi function Carrier

of states concentrations
n(E)
F(E)
EC
Energy (E)
N(E)
EF = Ei
EV
p(E)
1-F(E)
Extrinsic – N-type np  n 2
i

n
n(E)
F(E)
ED EC
Energy (E)
EF
Ei
N(E)
EV
p
p(E)
1-F(E)
Extrinsic – P-type np  n 2
i

n
n(E)
F(E)
EC
Energy (E)
N(E)
Ei
EF
EA EV
p
p(E)
1-F(E)
Law of mass action holds!
Extrinsic/ doped semiconductors thermal equilibrium:
n  N A  p  N D
Charge neutrality
ni2  np
Law of mass action
24
Law of mass action:
Extrinsic/ doped semiconductors at thermal equilibrium :
n  N A  p  N D
Charge neutrality
ni2  np
Law of mass action
25
Law of mass action:
Extrinsic/ doped semiconductors at thermal equilibrium :
n  N A  p  N D
ni2 Charge neutrality
n  N D  N A
n
 
n 2  N D  N A n  ni2  0
ni2  np
  N 
2
n  1  N D  N A   ni2   p  i
Law ofnmass action
  2
N
2 D A
 n
26
Doped semiconductors - n-type silicon
Donor Donor doping density ND
Ions Doped n-type
ND = 1e18 cm-3, ni = 1e10 cm-3
ED
ionized donors ni << ND
Electrons are MAJORITY carriers

Holes are MINORITY carriers
N-Type Silicon:
2

n  1  N D  N A   N 
N 
 2
 ni2  ~ N D

D A
ni2 ni2
p 
n ND
Note on nomenclature:
N-type P-type
Donor Doped Acceptor doped
electrons nn majority np minority
holes pn minority pp majority
equations
nn  N D pp  N A
2 2
n n
pn  i
np  i
ND NA
Temperature dependence carrier concentration
Freeze out:
Not all dopants ionised
E A  Ethermal  E g
n(T) < ND p  NA
Extrinsic region: Key approximation
Full Ionisation of dopants
n = ND
When is this not true??
Intrinsic region:
Full Ionisation of dopants
n(T) = ni

Dopants
Silicon Gallium Arsenide
N-Type: Phosphorous, P; Arsenic, As N-Type: Sulphur, S; Selenium, Se

P-Type: Boron, B; Aluminium, Al: P-Type: Beryllium, B; Zinc, Zn
Worked example:
• A silicon ingot is doped phosphorus [P] ND = 1016 cm-3, EC-ED = 46 meV
• Find the electron and hole concentrations at 300K.
Bandgap of Si Eg = 1.1 eV
Density of states in the NC = 2.9x1019cm-3
energy bands in Si NV = 1.8x1019cm-3
Mass of free electron m0 = 9.11 x 10-31 kg
Boltzmann’s constant k = 1.38 x 10-23 JK-1
Planck’s constant h = 6.63 x 10-34 Js
Velocity of light in a vacuum c = 3.00 x108 ms-1
Electron charge |e| = 1.60 x 10-19 C
Worked example:
• A silicon ingot is doped phosphorus [P] ND = 1016 cm-3, EC-ED = 46 meV
nn  N D  1016 cm 3
 Eg 
n  N C NV exp 
2
i 
 ~ 1010 cm 3 
2
 kT 
ni2
pn   10 4 cm 3
ND
Worked example:
• A silicon ingot is doped phosphorus [P] ND = 1016 cm-3, ED = 46 meV
• Find the Fermi level at room temperature (300K).
• Draw the band diagram with EV, Ei, EC, ED and EF.
nn  1016 cm 3 , pn  10 4 cm 3
Worked example:
nn  1016 cm 3 , pn  10 4 cm 3
Ei  ln    544meV
2  NC  2
What happens to the Fermi level?
 EC  Ei   EC  EF 
ni  N C exp   n  N C exp  
 kT   kT 
Intrinsic Extrinsic
What happens to the Fermi level?
 EC  Ei   NC 
ni  N C exp    EC  Ei  kT ln  Intrinsic
 kT   ni 
 EC  EF   NC 
n  NC exp     N D  EC  EF  kT ln  
Extrinsic
 kT   ND 
Fermi level in an extrinsic semiconductor
 EC  EF   NC 
n  N C exp    N D  EC  EF  kT ln 
 kT   ND 
EC-EF
Extrinsic Fermi energy
Intrinsic Fermi energy

Worked example:
Ei 
EC  EV   kT ln NV   544meV 46 meV
N  n  N D  4.6 x1016 cm 3
2 2  C
2
n
 5 x103 cm 3
p  167i meV
ND
 NC  384 meV
EC  EF  kT ln   167 meV
 ND 
What about the resistivity?
3 ni2
n  N D  10 cm  p 
16
 10 4 cm 3
ND
1 1
 
e n n   p p  e n N D
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ENGN3334/6334 Semiconductors

ANU Research School of Engineering

Lecture 2: Semiconductor Physics - Material Properties

Semiconductor Devices, 2/E by S. M. Sze

Semiconductor Devices, 2/E by S. M. Sze

ni = 1.5e+10 ~ 1e+10 cm-3

EF ~ 1.1/ = 550 meV Nc 2.9e+19 cm-3

Semiconductor Devices, 2/E by S. M. Sze

n ,  p the electron and hole mobility

Collision or Scattering event

Gallium Arsenide 1.4 1e6 9200 320

Silicon 1.1 1e10 1450 500

Germanium 0.6 1e13 3900 1900

Gallium Arsenide 1.4 1e6 9200 320 ~1e8

Silicon 1.1 1e10 1450 500 ~1e5

Germanium 0.6 1e13 3900 1900 ~1e2

How do we increase the conductivity in semiconductors?

By ‘doping’ them to increase the number

Donor Ion Acceptor Ion

Semiconductor Devices, 2/E by S. M. Sze

Semiconductor Devices, 2/E by S. M. Sze

Energy required to ionise dopants is the ionisation or activation energy

Semiconductor Devices, 2/E by S. M. Sze

Donor doping density ND Acceptor doping density NA

1e12 < ND < 1e18 cm-3 NA =1e12 - 1e18 cm-3

ni << ND << density of Si atoms ni << NA << density of Si atoms

Density Fermi function Carrier

Density Fermi function Carrier

Density Fermi function Carrier

Electrons are MAJORITY carriers

Semiconductor Devices, 2/E by S. M. Sze

N-Type: Phosphorous, P; Arsenic, As N-Type: Sulphur, S; Selenium, Se

Intrinsic Fermi energy

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