ME 4447/6405

Student Lecture

Justin Chow
Jacob Huang
Daniel Soledad
Overview

 History
 Properties
 Types
 BJT
 JFET
 MOSFET
 Applications
Daniel Soledad
Introduction

 Transistor History
 “Transistor” is combination of “transconductance”
and “variable resistor”
 How Transistors Are Made
▪ Vacuum tubes
▪ Inefficient, fragile, bulky, generated a lot of heat
▪ First Transistors
▪ Semiconductors – Bell Labs 1947
Introduction

 Packaging
 Surface Mount or Through Hole
 Usually 3 or 4 terminal device
▪ Can be packaged into ICs
 General Applications
 Amplification/Regulation
 Switches
 Current Controlled
 i.e: BJT
 The output current is proportional to input current
 Voltage Controlled
 i.e.: JFET, MOSFET
 The output current is proportional to input
voltage
BJT Transistor

 Bipolar Junction Transistor

 3 semiconductor layers sandwiched together

 Comes in two flavors

NPN BJT PNP BJT

Justin Chow
BJT Transistor

 Diodes
Forward Biased Reverse Biased
current flows no current flows
when VPN > .6-.7V
BJT Transistor

 BJT Basics (NPN) emitter base collector

 BE Forward Biased
 BC Reversed Biased
 β=IB / Ic ≈ 100
 IE = IB + IC

Electron Flow
BJT Transistor

 Things to remember
 PNP, biasing opposite
 Conventional current vs electron flow
 A small input current controls a much larger
output current.
BJT Transistor

 Operating Regions
Operating Region Parameters
VBE <0.7 V
Cut Off
IB = IC = 0
VBE >0.7 V
Linear
IC = β*IB
IB > 0, IC > 0
Saturated VBE >0.7 V,
VCE 0.2 V
BJT Transistor

 Operating Regions
 From
3rd Exercise

 Turns on/off
coils digitally
BJT Transistor

 Common Emitter Amplifier

β=100
BJT Transistor

 Common Emitter Amplifier

IB = (Vin − VB) / 10000Ω = (Vin − 0.7) / 10000Ω
IC = β(Vin − 0.7) / 10000Ω

Vout=10000*(Vin-0.7)/1000

When VCE = 0.2V

IC = 9.8 / 1000Ω = 9.8mA
IB = IC / β = 0.098mA
Vin − 0.7 = (0.098mA)(10000Ω)
Vin = 1.68V or greater.
BJT Transistor

 Power Dissipation
 PBJT = VCE * iCE
 Should be below the rated transistor power
 Important for heat dissipation as well
 Increased Gain
 β = β1 * β2
 VBE = VBE1 + VBE2
 Slower Switching

 2N6282
 Analogous to BJT BJT FET
Transistors Collector Drain
 Output is controlled
Base Gate
by input voltage
Emitter Source
rather than by current
 4 Pins vs. 3 N/A Body
 FET (Field Effect Transistors)
 MOSFET (Metal-Oxide-Semiconductor Field-Effect
Transistor)
 JFET (Junction Field-Effect Transistor)
 MESFET
 HEMT
 MODFET
 Most common are the n-channel MOSFET or JFET

Jacob Huang
 MOSFET

 In practice the body and D D

source leads are almost B

G G B
always connected
 Most packages have these S S

leads already connected

JFET
D

S
 Metal-Oxide Semiconductor F.E.T.
 A.K.A. Insulated-Gate FET (IGFET)
 2 Modes: Enhancement/Depletion
 N-Channel
 + Vgs -> More electrons -> More Current
 - Vgs -> Less electrons -> Less current
 P-Channel – Reversed
 Different from BJT
 Current
flow
D

G B

S
 N-Channel
 VGS > Vth -> Turns on device
 VGS < VTH -> No Current
 P-Channel
 Reversed

 Only E-type used now

 Region Criteria Effect on Current
Current
Cut-off VGS < Vth IDS=0 flow
D
Linear VGS > Vth Transistor acts like a
And variable resistor,
VDS <VGS-Vth controlled by Vgs G B

Saturation VGS > Vth Essentially constant

S
And current
VDS >VGS-Vth
 Current
flow
D

G B

S
 Used in high-power applications
 Heat Sink
 Vertical layout
 Not Planar like other transistors
 Reverse Bias VGS => Reduces channel size =>
Reduced Current
 Defaults “on”
 Vgs = 0 “on”

 |Vgs|> |Vp| “off”

Vp = Pinch-off or Cut-off Voltage

 Internal Capacitance
 Bi-directional
 Cut-off voltage is varying for each JFET
 0.3V – 10V

 N-Channel – Negative VGS

 P-Channel – Positive VGS
 Do not Forward Bias JFET – burn out
Property BJT MOSFET JFET
Gm Best Worst Medium
Speed High Medium Low
Noise Moderate Worst Best
Good No Yes Yes
Switch
High-Z Gate No Yes Yes
ESD Less More Less
Sensitivity
 Complementary MOS
 Used in Logic Gates
 P-channel (PMOS) to high
 N-channel (NMOS) to low

 HIGH usually +5 V
 LOW usually ground

 Q is high when A = 0, Q is low when A = 1

References
Spring 2007/2008 Slides
http://www.made-in-china.com/image/2f0j00ZhaTKREnIQkfM/IC-Transistor.jpg
http://en.wikipedia.org/wiki/JFET
http://en.wikipedia.org/wiki/MOSFET
http://en.wikipedia.org/wiki/Bipolar_junction_transistor
http://www.allaboutcircuits.com/vol_3/chpt_2/8.html
http://www.mcmanis.com/chuck/robotics/tutorial/h-bridge/images/basic-
bjt.gif&imgrefurl=http://www.mcmanis.com/chuck/robotics/tutorial/h-
bridge/bjt_theory.html
http://www.allaboutcircuits.com/vol_3/chpt_2/6.html
http://web.engr.oregonstate.edu/~traylor/ece112/lectures/bjt_reg_of_op.pdf
http://hades.mech.northwestern.edu/wiki/index.php/Diodes_and_Transistors#Com
mon_Emitter_Amplifier_Circuit
http://en.wikipedia.org/wiki/Darlington_transistor
http://www.allaboutcircuits.com/vol_3/chpt_6/2.html
http://www.allaboutcircuits.com/vol_3/chpt_4/2.html
http://www.designers-guide.org/Forum/YaBB.pl?num=1162476437/4
http://en.wikipedia.org/wiki/CMOS