Design problems of LASER

CHAPTER NO.4 GERD KEISER

 Problem no.4.11
• Approximate expression for the transverse
and lateral optical field confinement factors
T and  L respectively , in a Fabry –Perot
Lasing cavity are   D with D  2 d (n12  n22 )1/2
2

2  D2 
T
2
W
L  with
2 W 2

2 w 2
W (neff  n22 )1/2

(neff  n22  T ((n12  n22 )
• Here “w” and “d” are the width and thickness,
respectively, of the active layer and n1 and n2 are
refractive indices inside and outside the cavity,
respectively.
• a) Consider a 1300 nm InGaAsP laser diode in
which the active region is 0.1 μm thich, 1.0 μm
wide and 250 μm long with refractive indices n1
=3.55 and n2 = 3.20. What are the transverse and
lateral optical field confinement factors?
 b) Of 4.11
• Given that the total confinement factor is


  T  L , what is the gain threshold if the

effictive absorption coefficient is  = 30/cm
and the facet reflectivities are R1= R2 = 0.31?
Solution of Problem 4.11
 Problem 4.12
• A GaAs laser emitting at 800 nm has a 400
t

micrometer cavity length with refractive index

n = 3.6. If the gain g exceed the total loss
 t = throughout the range 750 nm < λ < 850nm
How many modes will exist in the laser?
Solution of Problem 4.12
 Problem 4.13
• A laser emitting at λ0=850nm has a gain
spectral width of σ = 32 nm and a peak gain of
g(0) 50/cm , Plot g(λ) from equation 4.41. If
 t =32.2 /cm , show the region where lasing
takes place. If the laser is 400 micrometer long
and n= 3.6, how many modes will be excited in
the this laser?
Solution of Problem 4.13
 Problem 4.14
• The derivative of Eq 4.46 assumes that the
refractive index n is independent of
wavelength .
• Show that when n dependent on λ , we have

 2
 
2L(n   dn / d  )
 b) Of 4.14
• If the group refractive index (n-λdn/dλ) is 4.5
for GaAs at 850 nm, what is the mode spacing
for a 400 micrometer long laser?
Solution of problem 4.14
 Problem 4.15
• For LASER structure that have strong carrier
confinement, the threshold current density for
stimulated emission Jth can to a good
approximation be related to the lasing thresold
optiocal gain gth by gth = βJth where β is the
constant that depends on the specific device
construction. Consider a GaAs laser with an
optical cavity of length 250 micrometer and with
100 micrometer. At the normal operation
temperature , the gain factor β = 21x10^-3
A/cm^3 and the effective absorption coefficient
– = 10/cm
 a) Of 4.15
• If the refractive index is 3.6, find the threshold
current density and the threshold current Ith.
Assume the laser and faces are uncoated and
the current is restricted to the optical cavity.
• b) What is the threshold current if the laser
cavity width is reduced to 10 micrometer.
Solution of problem 4.15
Problem 4.16
Solution of problem 4.16
Problem 4.17
Solution of 4.17
Problem 4.18
Solution of problem 4.18
Problem 4.19
Problem 4.23
Solution of Problem 4.23
Problem 4.24
Solution of problem 4.24
Problem 4.25
Solution of Problem 4.25