IGBT: Insulated-Gate Bipolar Transistor

• Combination BJT and MOSFET

– High Input Impedance (MOSFET)
– Low On-state Conduction Losses (BJT)
• High Voltage and Current Ratings
• Symbol

ECE 442 Power Electronics 1

 Cross-Sectional View of an IGBT

Metal

Silicon Dioxide

Metal

ECE 442 Power Electronics 2

IGBT Equivalent Circuit for VGE<VT
+
IEPNP VCC
IBPNP

ICNPN
Leakage Current
ICPNP
IBNPN

Both transistors are OFF

IENPN IRBE

ECE 442 Power Electronics 3

 IGBT Equivalent Circuit for VGE>VT
+
PNP transistor turns ON, VCC
RMOD decreases due to
carrier injection from the
PNP Emitter.

NPN Transistor
becomes forward
biased at the BE,
MOS transistor conducts, drawing current
drawing current from the from the Base of
Base of the PNP transistor. the PNP transistor.

ECE 442 Power Electronics 4

Channel is Induced When VGE>VT

RMOD PNP
electrons

NPN
RBE
Induced Channel

ECE 442 Power Electronics 5

 IGBT Output Characteristics

Follows an SCR
characteristic

ECE 442 Power Electronics 6

IGBT Transfer Characteristic

ECE 442 Power Electronics 7

IGBT Used as a Switch

ECE 442 Power Electronics 8

Fairchild FGA25N120AND IGBT

ECE 442 Power Electronics 9

ECE 442 Power Electronics 10
ECE 442 Power Electronics 11
ECE 442 Power Electronics 12
ECE 442 Power Electronics 13
ECE 442 Power Electronics 14
ECE 442 Power Electronics 15