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Transient Capacitance in
InGaAs/InP-based Diodes
Kiril Simov and Tim Gfroerer
Davidson College
Mark Wanlass
NREL
Supported by the American Chemical Society
– Petroleum Research Fund
Motivation: Thermophotovoltaics
Thermal
Blackbody
Radiation
Radiation
Photovoltaic
Heat Blackbody Cell
Source Radiator
Experimental Setup
Computer with LabVIEW
Digital Scope
(5)
(Tektronix)
Capacitance (1)
meter (Boonton) (2)
(4) 77K Oxford
Temp Controller
Pulse Generator
Cryostat with sample
(3) Agilent
P-N Junction Depletion Layer with Bias
Depletion Layer
+
+ +
+
+ + - + - -
+ + +
+
+ + P + + - + N -
+ + +
- -
+ +
+ + + - +
+ +
Temp: 77K
Pulse Length:
0.1
10 s
30 s
100 s
200 s
0.01
1E-3
Time (s)
Capture Analysis
Capture cross-section
Ln (Amplitude of Transient) (a.u.)
-3
blue = 109 s
1
-4
vN D
avg=111 +/- 2 s
-5
red=113 s
-6
T = 77K, Bias: Holes: = 2.5 x 10-20 cm2
-0.1V steady state Electrons: = 7.5 x 10-21 cm2
-7
-0.3V reverse bias
-8
0 200 400 600
0.4
Temp: 77K
700s pulse
0.3 Exp Fit
Cfree
0.2
CT
NT ND
0.1 C F
Ctrapped ~ 7 x 1015 cm-3
0.0
77K
-3 146K
Ln( C ) (a.u.)
= 123 s 156K
-6 = 33 s = 51 s
-9
Time( s)
Escape Analysis
12
-Ea / kT
Escape Rate ~ A * e
Ln (Escape Rate) (s )
-1
10
Bias ~
6 0V
-1V
-2V
4
75 80 85 90 95
-1
Energy 1/kT (eV )
Conclusions
A deep level has been detected
The effective trap cross-section is ~10-20 cm2
The trap concentration is ~ 1016 cm-3
The depth of the level is ~ 0.30 eV
Our results are consistent with sub-bandgap PL from
similar structures.
Web links:
This talk:
http://webphysics.davidson.edu/faculty/thg/talks-posters/MAR-04.p
pt
PL poster:
http://webphysics.davidson.edu/faculty/thg/talks-posters/SESAPS-0
3.ppt
Device Structure
p+ layer
junction
n layer