BJT Processing

1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion
n+ layer p+ layer n+ layer
4. Base p-type diffusion p-base layer

5. Emitter n+ diffusion n+ buried layer

6. p+ ohmic contact
p-substrate
7. Contact etching

8. Metal deposition and etching

9. Passivation and bond pad opening

BJT Processing
1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion

4. Base p-type diffusion

5. Emitter n+ diffusion

6. p+ ohmic contact

7. Contact etching

8. Metal deposition and etching

9. Passivation and bond pad opening p-substrate

BJT Processing
1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion

4. Base p-type diffusion

5. Emitter n+ diffusion

6. p+ ohmic contact
n epi layer
7. Contact etching
n+ buried layer
8. Metal deposition and etching

9. Passivation and bond pad opening p-substrate

BJT Processing

p+ isolation layer

p+ isolation layer
1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion

4. Base p-type diffusion

5. Emitter n+ diffusion

6. p+ ohmic contact

7. Contact etching
n+ buried layer
8. Metal deposition and etching

9. Passivation and bond pad opening p-substrate

BJT Processing

p+ isolation layer

p+ isolation layer
1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion

4. Base p-type diffusion

5. Emitter n+ diffusion

6. p+ ohmic contact
p-base layer
7. Contact etching
n+ buried layer
8. Metal deposition and etching

9. Passivation and bond pad opening p-substrate

BJT Processing

p+ isolation layer

p+ isolation layer
1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion

4. Base p-type diffusion

5. Emitter n+ diffusion
n+ layer n+ layer
6. p+ ohmic contact
p-base layer
7. Contact etching
n+ buried layer
8. Metal deposition and etching

9. Passivation and bond pad opening p-substrate

BJT Processing

p+ isolation layer

p+ isolation layer
1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion

4. Base p-type diffusion

5. Emitter n+ diffusion
n+ layer p+ layer n+ layer
6. p+ ohmic contact
p-base layer
7. Contact etching
n+ buried layer
8. Metal deposition and etching

9. Passivation and bond pad opening p-substrate

BJT Processing
1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion p+ isolation layer

4. Base p-type diffusion

5. Emitter n+ diffusion
n+ layer p+ layer n+ layer
6. p+ ohmic contact
p-base layer
7. Contact etching
n+ buried layer
8. Metal deposition and etching

9. Passivation and bond pad opening p-substrate

BJT Processing
1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion p+ isolation layer

4. Base p-type diffusion

5. Emitter n+ diffusion
n+ layer p+ layer n+ layer
6. p+ ohmic contact
p-base layer
7. Contact etching
n+ buried layer
8. Metal deposition and etching

9. Passivation and bond pad opening p-substrate

BJT Processing
1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion p+ isolation layer

4. Base p-type diffusion

5. Emitter n+ diffusion
n+ layer p+ layer n+ layer
6. p+ ohmic contact
p-base layer
7. Contact etching
n+ buried layer
8. Metal deposition and etching

9. Passivation and bond pad opening p-substrate

Doping Profiles in a BJT
Substrate PNP BJT
Lateral PNP BJT
Modifications to a BJT Process
Dielectric isolation --- substrate isolation

Superbeta transistors

Double diffusion --- make acceptable JFETs

Ion implanted JFETs --- make good JFETs

Double diffused pnp BJTs --- make good pnp devices