UNIT III

JFET and MOSFET Amplifiers

 OUTLINE

• Small signal Analysis of JFET amplifiers

• Small signal Analysis of MOSFET and JFET
• BICMOS cascode Amplifier
 FET ( Field Effect Transistor)

• Unipolar device i. e. operation depends on only

one type of charge carriers.
• Voltage controlled Device (gate voltage controls
drain current).
• Very high input impedance (109-1012 ).
• Source and drain are interchangeable in most
Low-frequency applications.
• Low-power consumption.
• Less Noisy as Compared to BJT.
• Very small in size, occupies very small space in
Ics.
 Types of Field Effect Transistors
(The Classification)
» JFET n-Channel JFET
FET
p-Channel JFET
MOSFET (IGFET)

Enhancement Depletion
MOSFET MOSFET

n-Channel p-Channel n-Channel p-Channel

EMOSFET EMOSFET DMOSFET DMOSFET
The Junction Field Effect Transistor (JFET)

Figure: n-Channel JFET.

 JFET

• There are two basic configurations of junction

field effect transistor, the N-channel JFET and the
P-channel JFET.
• The N-channel JFET’s channel is doped with
donor impurities meaning that the flow of current
through the channel is negative (hence the term N-
channel) in the form of electrons.
 SYMBOLS

Drain Drain
Drain

Gate Gate
Gate

Source Source Source

n-channel JFET n-channel JFET p-channel JFET

Offset-gate symbol
 Small signal Analysis

• The coupling capacitors bypass capacitor are

short circuitED
• Short the DC supply voltage
• Replace the FET with the hybrid-p model
Common source JFET
Small signal -Common source JFET-
contd…
Small signal -Common source JFET-
contd…
Source Follower JFET
Small signal equivalent-Source Follower
JFET

Av= gmRs/(1+gmRs)
Common Gate JFET
Small signal model-Common Gate JFET

AV= -gmRd Rin=1/gm

Self bias of JFET
Small signal equivalent -Self bias of
JFET-contd…
Enhancement MOSFET showing channel length L and
channel width W.
MOSFET- SYMBOL
Small-signal equivalent circuit for FETs.
FET small-signal equivalent circuit that accounts for the
dependence of iD on vDS.
MOSFET Characteristics
Common source Amplifier -MOSFET
 Small signal -Common source Amplifier
-MOSFET
For drawing an a c
equivalent circuit of
Amp.
•Assume all Capacitors
C1, C2, Cs as short
circuit elements for ac
signal
•Short circuit the d c
supply
•Replace the FET by
its small signal model
Analysis of CS Amplifier
A C Equivalent Circuit

Simplified A C Equivalent Circuit

 Analysis of CS Amplifier-contd…

v
Voltage gain, A  o
v v
gs Input imp., Z R R R
in G 1 2
v  i R  g v R
o o L m gs L

v r R
A  o  g R , R  R r Out put imp., Z  r R  d D
v v m L L D d o d D r R
gs d D
Small Signal ‘T’ Model : NMOSFET
Small Signal Models

‘T’ Model
 Analysis of CS Amplifier with Potential Divider Bias

Av  gm(rd || RD)

This is a CS amplifier configuration therefore the

input is on the gate and the output is on the drain. Zi  R1 || R2

Av  gm(rd || RD) Zo  rd || RD
Zo  RD
rd 10RD
Av  gmRD,  r  10 R
d D
An Amplifier Circuit using MOSFET(CS Amp.)
A small signal equivalent circuit of CS Amp.
 Common Source Amplifier (CS)

• Signal ground or an ac earth is at the source through a

bypass capacitor

• Not to disturb dc bias current & voltages coupling

capacitors are used to pass the signal voltages to the
input terminal of the amplifier or to the Load
Resistance

• CS circuit is unilateral
– Rin does not depend on RL and vice versa
 Small Signal Hybrid “π” Model : (CS)

vo vo vgs
Gv   
vsig vgs vsig

RG
vgs  vsig
RG  Rsig
 Small Signal Hybrid “π” Model : (CS)

Rin  RG

R o  ro || RD

vo   g m v gs ro || RD || RL 

vo  RG 
Gv    g m ro || RD || RL  

vgs R  R
 G sig 
Small-signal analysis performed directly on the amplifier
circuit with the MOSFET model implicitly utilized

 RG 
  g m ro || RD || RL 
vo
Rin  RG R o  ro || RD 


v gs  RG  Rsig 
 Common-source amplifier
with a resistance RS in the source lead
 The Common Source Amplifier with a
Source Resistance
• The ‘T’ Model is preferred, whenever a resistance is
connected to the source terminal.

• ro (output resistance due to Early Effect) is not

included, as it would make the amplifier non
unilateral
 Small-signal equivalent circuit with ro neglected.

vg
i
1
 RS
gm
Small-signal Analysis.

Rin  RG
Ro  RD
Voltage Gain : CS with RS

vo vo vgs vi
Gv    
vsig vgs vi vsig
vo   g m v gs RD || RL 
1
gm vi
v gs  vi 
1
 RS 1  g m RS
gm
RG
vi  vsig
RG  Rsig
vo  RG  g m RD || RL  
 Gv   
 
 
vsig  RG  Rsig  1  g m RS 
 Common Source Configuration with Rs
• Rs causes a negative feedback thus improving
the stability of drain current of the circuit but
at the cost of voltage gain

• Rs reduces id by the factor

– (1+gmRs) = Amount of feedback

• Rs is called Source degeneration resistance as

it reduces the gain
Small-signal equivalent circuit directly on
Circuit
 BJT / MOSFET

  ,   1
Rin  RB || r Rin  RG
Rout  ro || RC Rout  ro || RD
vo
  gm
RB || r
ro || RC || RL  vo
  gm
RG
ro || RD || RL 
vsig RB || r  Rsig vsig RG  Rsig
 Common Source Amplifier (CS) Summary

• Input Resistance is infinite (Ri=∞)

Rin  RG
• Output Resistance = RD
R o  ro || RD
• Voltage Gain is substantial

 RG 
  g m ro || RD || RL 
vo 
v gs R R 
 G sig 
MOSFET -Source follower
.
Small-signal ac equivalent circuit for the
source follower .
Equivalent circuit used to find the output
resistance of the source follower.
Common-gate amplifier.
Small signal-Common Gate
Small-signal ‘π’ models for the MOSFET
 Voltage swing limitation

• Up swing limited by transistor going in to cut off

• Vout (max)= VDD
• Lower swing limited by MOSFET entering in to
linear region
• Vou(min)-VGG-VT
A common-gate amplifier based on the circuit
 Common Gate (CG) Amplifier
• The input signal is applied to the source

• Output is taken from the drain

• The gate is formed as a common input & output port.

• ‘T’ Model is more Convenient

• ro is neglected
A small-signal equivalent circuit
A small-signal Analusis : CG

vi vi 1
Rin   
ii g m vi g m

Rout  RD
 A small-signal Analusis : CG

vo vo vi
Gv   
vsig vi vsig
vo  g m vi RD || RL 
1
Rin gm vsig
vi  vsig  vsig 
Rin  Rsig 1
 Rsig 1  g m Rsig
gm
vo g m RD || RL 
Gv  
vsig 1  g m Rsig
Small signal analysis directly on circuit
The common-gate amplifier fed with a current-
signal input.
 Summary-CG

• CG has much higher output Resistance

• CG is unity current Gain amplifier or a Current
Buffer
• CG has superior High Frequency Response.
 .
A common-drain or source-follower
amplifier
Small-signal equivalent-circuit model
Small-signal Analysis : CD
A common-drain or source-follower amplifier
:output resistance Rout of the source follower.

 1  1
Rout  ro ||   
 gm  gm
A common-drain or source-follower amplifier. : Small-
signal analysis performed directly on the circuit.
Common Source Circuit (CS)
Common Source Circuit (CS) With RS
Common Gate Circuit (CG)
Current Follower
Small Signal Model MOSFET : CD
Small Signal Analysis CD

1/gm

D
gmvsg
Solution Small Signal Analysis : Input
Resistance
1/gm
Ig=0

D
gmvsg

Rin

Rin  
 Solution Small Signal Analysis : Output Resistance
Itest

1/gm
ID
0V I
R Vtest
IG= D
0 gmvsgD

Rout

Vtest Vtest
Rout  I RD 
I test RD
Vtest 1
I test  I RC  I D Vtest Rout   RD ||
ID  Vtest Vtest gm
1 
RD 1 / g m
gm
Solution Small Signal Analysis : Voltage
Gain
+
vsg vo vo vsg vi
  
1/gm vsig vsg vi vsig
-
-
  g m RD || RL 
+ vo
vo vsg
vi D +
gmvsg
-
Solution Small Signal Analysis : Voltage
gain
+
vsg 1/gm

-
+ D
gmvsg
vi

1
vsg gm

vi 1  RD || RL 
gm
Solution Small Signal Analysis : Voltage Gain

1/gm

+ D
gmvsg
vi

vi  vsig
Rin  
 Solution Small Signal Analysis : Voltage
Gain
vo vo vsg vi
  
vsig vsg vi vsig

1
  g m RD || RL 
vsg gm vo

vi 1  RD || RL  vsg
gm
 1
vo gm
  g m(RD||R L ) 
vi  vsig vsig 1  (RD || RL )
gm

vo (RD||R L )
Then 
vsig 1  (RD || RL )
gm
Solution Small Signal Analysis : Voltage
Gain
1/gm

-
D vo

 RD || RL 
+
gmvsg vi 1  RD || RL 
vi + gm
- vi  vsig

vo vo vi vo

 RD || RL 
  vsig 1  RD || RL 
vsig vi vsig gm
BICMOS
 BICMOS -contd…

• Combining the high gain of BJT and infinite

impedance of MOSFET will lead to BiCMOS
differential amplifier design.
• Rs = typical 100 KW

• BICMOS cascode amplifier has overall voltage

gain of C-S, but with frequency response
comparable to CB Amplifier.
 BICMOS -contd…

• The basic idea is to combine the high Rin and

large transconductance (g m) of a commonsource
(common-emitter) amplifier with the current-
buffering property and superior high-frequency
response of the common-gate (common-base)
circuit
 BICMOS -contd…

• In response to input signal voltage vi, the CS

transistor Q1 conducts a current signal gm1 vi in
its drain terminal and feeds it to the source of the
CG transistor Q 2 (cascode transistor).

• Q 2 passes signal to its drain and to the load RL. Q

2 acts as a buffer, presenting low Rin to the drain
of Q1 and providing high Rout at output.