Behnam Pres Buck 93-11-13

‫دانشگاه ازاد اسالمی واحد کرج‬
1393/11/13
Switching power supply
‫ بهزاد بهنام‬:‫مدرس‬
behzad.behnam@gmail.com 1
1.1 Introduction to Power
Processing
Power Switching Power

input converter output
Control
input
• Dc-dc conversion: Change and control voltage magnitude

• Ac-dc rectification: Possibly control dc voltage, ac current
• Dc-ac inversion: Produce sinusoid of controllable magnitude and
frequency
• Ac-ac cycloconversion : Change and control voltage magnitude and
frequency
The switching converter is the “brain” of the power system, allowing conversion
of voltage and current levels with high efficiency, plus control
Control is invariably required
Power Switching Power

input converter output
Control
input
Feedforward Feedback
Controller
• Traditional analog
feedback
Reference • Sophisticated control using
inexpensive digital
microcontrollers
Electric Vehicle
Tesla Model S
Functions of the power

electronics:
1. Convert the DC battery voltage
to the variable AC required to
drive the AC motor
• 240 V battery
• Variable-frequency, variable-
voltage AC drives the motor
• AC motor propels the rear axle
• Up to 330 kW (acceleration)
• Up to 60 kW regenerative
braking
2. Control charging of the battery

• Interface to 240 V 60 Hz 1φ 100 A circuit in garage
• Control AC current waveform to be sinusoidal, unity
power factor
• Control charging of battery to maximize life
Hybrid Vehicles
Prius
Power Electronics Module:

• Convert the DC battery voltage to the variable
AC required to drive the AC motor
• Includes dc-dc boost converter and dc-3φac
inverter
• Control system can operate in all-electric mode
or in hybrid gas+electric mode
• Partial-power electronics
Under the hood:

Gas engine
Power electronics module
Variable-Speed Wind Turbine
Systems
AC generator produces “wild ac”:
frequency and amplitude change with
wind speed
Utility operates with constant frequency
(60 Hz) constant voltage ac
Power electronics changes the frequency
and voltage, and also implements
control functions
• Cycloconverter, or
• DC link system: rectifier, boost dc-dc,
inverter
Photovoltaic Solar Power Systems
Grid-tied solar: inverter converts

dc of solar panels to ac for grid
Stand-alone solar: dc-dc converter
interfaces solar panels to batteries
A solar roof shingle system
Buck-boost DC
PV + Transformer +
converter Output
input (noninverting) 1:8
48 V 400 V to
12- Zero-voltage inverter
100 V – switching –
Controller
A standalone photovoltaic power
system
The system constructed in ECEN 4517/5517 Power

Electronics and Photovoltaic Systems Laboratory
Computer power supply systems
Battery-powered and servers
Inverter Display
backlighting
iac(t) Charger
Buck Microprocessor
vac(t) PWM converter
Rectifier Power
management
ac line input Boost Disk

85–265 Vrms Lithium
battery converter drive
Laptop power system
iPhone power system and charger

Computer servers
Server farms
Vi Vo
‫ غیر‬dc ‫ولتاژ‬ dc ‫ولتاژ‬
‫رگوله‬ ‫رگوله شده‬
DEFINITION
DEFINITION:
Converting the unregulated DC input to a controlled DC output with a
desired voltage level.
• General block diagram:
Applications:
•High-frequency switched-mode power supply
(SMPS),
• DC motor control (traction, forklift, electric vehicles, trams, battery chargers,
capacitor chargers)
Linear Regulator
• Transistor is operated in linear (active)
mode.
• Output voltage:
• The transistor can be conveniently

modeled by an equivalent variable
resistor, as shown.
• Power loss is high at high current due to:
Switching Regulator
Transistor is operated in switched-mode:
 Switch closed: Fully on (saturated)
 Switch opened: Fully off (cut-off)
 When switch is open, no current flow in it

 When switch is closed no voltage drop
across it.
Since P=V.I, no losses occurs in the

switch.
 Power is 100% transferred from
source to load.
 Power loss is zero (for ideal switch):
 Switching regulator is the basis of all

DC-DC converters
Linear and SMPS Block Diagram
Power stage: Schematic of flyback converter
Control of DC-DC Converter:
Pulse Width Modulation (PWM)
DC-DC Converter Control
• Purpose of
control:
To regulate the
output voltage so
that it is maintained
within a specified
tolerance band
(e.g. 2% of output
DC voltage)
• Basic block
diagram for
converter control
Isolated DC-DC Converter
• Isolated DC-DC requires isolation transformer
• Two types: Linear and Switched-mode Power Supply (SMPS)
• Advantages of switched mode over linear power supply
-Efficient (70 – 95%)
-Weight and size reduction
• Disadvantages
-Complex design
-EMI problems
• However above certain ratings, SMPS is the only feasible choice
• Types of SMPS
-Flyback
-forward
-Push-pull
-Bridge (half and full)
Buck (Step-Down) Converter for CCM mode iL>0
Continuous Current Mode (CCM)
 Duty cycle D:
 0≤D≤1
 complement D:
 D´ = 1 - D
0 ≤ t ≤DT
S  on
D  off
DT ≤t ≤ T
S  off
D  on
Switch is turned on (closed) CCM mode
• Diode is reversed biased.

• Switch conducts inductor current
• This results in positive inductor
voltage, i.e:
• It causes linear
increase in the
inductor current
Switch turned off (opened) CCM mode
• Because of inductive
energy storage, iL continues to flow.
• Diode is forward biased
• Current now flows (freewheeling) through
the diode.
• The inductor voltage can be derived as:
Analysis CCM mode
Analysis CCM mode
Steady-state Operation CCM mode
+ L -
Realization using
iL(t) ic(t)
VL(t)
power MOSFET
D1 R
Vg +- +
and diode t
DTs Ts
Unstable
Steady-state
Average, Maximum and Minimum Inductor Current
CCM mode
Average inductor current = Average current in RL
Continuous Current Mode (CCM)
From previous analysis,
For continuous operation,
This is the minimum inductor current to ensure

continous mode of operation. Normally L is
chosen to be >> Lmin
Output Voltage Ripple
Output Voltage Ripple
Basic Design Procedures
• Calculate D to obtain required output voltage.

• Select a particular switching frequency (f) and device
– preferably f >20 kHz for negligible acoustic noise
– higher fs results in smaller L and C. But results in higher losses.
Reduced efficiency, larger heat sink.
– Possible devices: MOSFET, IGBT and BJT. Low power MOSFET
can reach MHz range.
• Calculate Lmin. Choose L >>10 Lmin
• Calculate C for ripple factor requirement.
– Capacitor ratings:
• must withstand peak output voltage
• must carry required RMS current. Note RMS current for
triangular waveform is Ip/3, where Ip is the peak capacitor
current given by iL/2.
• Electrolytic Capacitors (E-CAPs) can be used.
• Wire size consideration:
– Normally rated in RMS. But iL is known as peak. RMS value
for iL is given as:
Examples
Question 1.
A buck converter has an input voltage of 12 V. The required average output
voltage is 5 V and peak-to-peak output ripple voltage is 20 mV. The switching
frequency is 25 kHz. If the peak-to-peak ripple current of inductor is limited
to 0.8 A, determine
i. duty ratio, D
ii. filter inductance, L
iii. output filter capacitor, C (0.42, 148 mH, 197 uF)
Question 2.
A buck converter is supplied from a 50V battery source. Given L = 400 μH,
C=100 μF, R=20 , f =20 kHz and D = 0.4. Calculate:
(a) output voltage
(b) maximum and minimum inductor current,
(c) output voltage ripple.
Examples
Question 3.
A buck converter has an input voltage of 50V and output of 25 V. The
switching frequency is 10KHz. The power output is 125 W.
(a) Determine the duty cycle,
(b) value of L to limit the peak inductor current to 6.25 A,
(c) value of capacitance to limit the output voltage ripple
factor to 0.5 %.
Question 4.
Design a buck converter such that the output voltage is 28 V when the
input is 48V. The load is 8 . Design the converter such that it will be in
continuous current mode.
The output voltage ripple must not be more than 0.5 %.
Specify the frequency and the values of each component.
Suggest the power switch also.
Buck Converter Conclusion
• The output voltage may be controlled by the duty-ratio, but cannot be larger
than input voltage
• The voltage conversion ratio depends solely on duty-ratio, and is independent
of load condition
• The capacitor ripple current is independent of load current
• The off-state voltage across device is supply voltage
CCM & DCM for BUCK regulator
Introduction to
Continuous Conduction Mode (CCM)
Continuous Conduction Mode (CCM)
boundary condition
For example: if ( L=187.5uH f=20kHZ Vg=Vin=40v )
simulation
RL=10 & DC=0.25 & Vin=100v
RL=2 & DC=0.25 & Vin=100v
RL
2
5
10
20
50
100
DC=0.25
RL=50
Vo RL
100
50
20
10 , 5 , 2
Introduction to
Discontinuous Conduction Mode (DCM)
BUCK SWITCHING REGULATOR BLOCK
Output filter model
Output filter of a switching converter
sLo
+ + 1
R o //
1
Vo (s) = sC o
Vs (s) Ro Vo (s)
V s(s) .
 1 
sCo
sL o +  R o //
- -
 sC o 
1
V o(s) C o Lo
= .
Vs (s) 2 s 1
s + +
C o R o L oC o
 2
=
1 1
H(s) = 2 o
, o= .
s + 2 o o
s + 2
L oC o
2R C o
Lo
Output filter model
Magnitude response of the output filter for several values of the
output resistance Ro 30
20 Lo
Ro >
Co
10
Magnitude Response (dB)

0
-10
1 Lo
Ro =
-20
2 Co
-30 Lo
Ro <
Co
 2 2
 2 -40
     
20 log G ( )  10 log  1      4    

    o    o   -50
   0.01 0.1 1 10 100
f / fo
Output filter model
Phase response of the output filter for several values of the output
resistance Ro
0
   -20
 2 
  
-40
1 Lo Lo
( )   tan 1  o
2 
Ro =
2 Co
Ro >
Co
 1    
-60
Phase Response (degree)
   
  o  -80
Ro <
Lo
Co
-100
-120
-140
-160
-180
0.01 0.1 1 10 100
f / fo
Output filter model
Output filter with a capacitor Resr
1
s+
H(s) = R o R esr C o R esr .
( + ) L
L o R o R esr s 2 + o + C R R
o o esr R o
s+
L oC o( R o + R esr ) L oC o( R o + R esr )
1
f ESR 
sLo
2 R e sr Co + +
1
sCo Vo (s)
Vs (s) Ro
Resr
- -
Output filter model
 2 2
 2
     
20 log G ( )  10 log(1   2 2 )  10 log  1      4   

    o    o  
   
Magnitude response of 20
an output filter with a 0 Lo

Ro
capacitor having a Resr >
Co
for several values of -20
Ro =
1 Lo
2 Co
the output resistance -40
Ro Ro <
Lo
-60
Co
-80
-100
0.001 0.01 0.1 1 10 100 1000
fo fesr
behzad.behnam@gmail.com f / fo 70
Output filter model
Phase response of an output filter with a capacitor having a Resr
for several values of the output resistance Ro
 f 
 2 
0
1  fo   f  -20
 LC = tan  2  tan 
- -1
 . Ro >
Lo
 1  f    f esr 
-40 Co
Phase Response (degree)

 f  
1 Lo
-60 Ro =
  o 
2 Co
Lo
Ro <
-80 Co
Ro
o  -100
LoCo ( Ro  R e sr ) -120
L  -140
   o  Co R e sr  o -160
 Ro  2 -180
0.001 0.01 0.1 1 10 100 1000
  Co R e sr f / fo
fo fesr
PWM BLOCK
Review of negative feedback
Block diagram representation for a closed-loop system
Vref Vo
A (s)
+
ß (s)
Review of negative feedback
• Closed-loop gain Vo

A
Vref 1   A
• Loop gain TL   A
Vo 1

• For TL>>1 Vref 
  A 1

• Stability analysis  A  1 or 
 phase(  )  phase( A)  180

Relative stability
Definitions of gain and phase margins
20
Gain margin = 8dB
0 -50°
-20 -100°
Magnitude (dB)
Phase Angle
-40 -150°
Phase margin = 40°
-180°
-60 -200°
-80 -250°
0.2 behzad.behnam@gmail.com
1.0 f1 f' 10 20 78
Relative stability
Loop gain of a system with three poles
20 log |TL( j)|
Magnitude
0°
-20dB /decade
-45°
-40dB /decade
Phase

-90°
Gain
margin -60dB /decade
-135°
g
fg
-180°
0 f p1 fp2 f p3
p
fp
Phase
margin -225°
-270°
Closed-loop switching converter
Vref Vo
Compensation PWM Switch LPF
ß (s) Load
Power in switch LPF + LOAD

Output Filter
Qs Lo
100uH R3
Co
R1
100uF
100K B(s)
Dfw RL
Vs feedback
12V R2 Resr
R4
0.5
100K
Z2
Comparator
Z1
Ve -
+
+ Vref
Currente - Error
Driver
ERROR AMP
Amplifier
Sawtooth
Oscillator
PWM
Pulse-Width Modulator
Feedback network
Qs L1
+ R1
R2 Va
Dfw C2 RL Va Vsp =
Vs
R1 + R2
R2
-
Z2
_ _
Base Drive
Circuitry Z1
Ve -
PWM out . + .
. + Vref
. -
Comparator Error
Amplifier
Rc Sawtooth
Vcc signal
CLOCK Qst
Cc
(a)
PWM
Qs ON Qs ON
R2
Va '  Vo
t
1/ f s 2 / fs
R1  R2 Sawtooth
Ve
CLOCK Qst ON
t
1 / fs 2 / fs
(b)
Vin(min)<Vin<Vin(max)
0<Beta<1
Vin=Vin(max)
‫تنها مجهولی که‬

‫باید طراحی شود‬
Beta=Beta(max)
‫معیار های طراحی‬
‫‪ -1‬حد فاز ‪ phase margin>45‬برای پایداری نسبی مناسب (با استفاده از جبران کننده ‪)lead‬‬
‫‪ -2‬خطای حالت ماندگار صفر (‪ )ess=0‬به ورودی پله (با استفاده از انتگرال گیر ‪)type 1‬‬
‫‪ -3‬پاسخ گذرای تا حد ممکن سریع (با افزایش پهنای باند ‪ BW‬یا ‪ WodB‬تا حد ممکن)‬
‫‪ -4‬برای حذف اثر ریپل های سوئیچینگ الزم است که ‪( WodB<Wpwm=Wsw‬معیار طراحی ‪)WodB=Wpwm/5‬‬
‫‪ -5‬عبور مجانب دامنه با شیب ‪ -20dB/dec‬از نقطه ‪ WodB‬برای حداقل کردن اثر تغییرات پارمترهای مدار بر روی‬
‫‪phase margin‬‬
‫)‪Gloop(s)=Gc(s)xGpwmxVin(max)xGload(s)xBeta(max‬‬
‫‪behzad.behnam@gmail.com‬‬ ‫‪84‬‬
Error amplifier compensation networks
PI Compensation network
 1  1 
  2
R + 
H(s) =  sC 2   sC 1 
. H(s) =
1 + sR 2C 1
.
 1 1  sR1( C 1 + C 2 + sR 2C 1C 2 )
R1  R 2 + + 
 sC 1 sC 2  C2
1 1 R2 C1
f p= f z=
2 R 2C 2 2 R 2C 1 R1
Vfb -
 f 1
Verror
 f1
.
8
+
 lead tan  
= -1
 lag = tan   .
-1
 f z  f p
Vref
Frequency response of the PI compensation network

70
50
Magnitude response (dB)
30
10
-10
-30
0.001 0.01 0.1 1 10 100 1000 10000
fz = 854.3 fp = 21,832
f (kHz)
Phase response of the PI compensation network

-20
-30
Phase response (degrees)
-40
-50
-60
-70
-80
-90
0.001 0.01 0.1 1 10 100 1000 10000
f (kHz)
PID Compensation network

(1+ j R 2C 1 ) (1+ j( R 1 + R 3 )C 3 )
H(j ) = .
- 2 R 2C 1C 2 + j ( C 1 + C 2 ) R1 + j R1 R 3C 3
C2
1 ( C1 + C 2 )
f p1 = f p2 =
R3 C3 R2 C1
2 R 3C 3 2 R 2C 1C 2
R1
Vfb -
. Verror
8
1 1 Vref +
f z1 = f z2 =
2 R 2C 1 2 ( R1 + R 3 )C 3
R2 = R 2( R1 + R 3 )
K 1= K2
R1 R1R 3
Magnitude response of the PID compensation network

Magnitude responce (dB)
K2
+ 20dB / decade
- 20dB / decade
K1
- 20dB / decade
Part of interest
f
f z1 f z2 f p1 f p2
Magnitude response of the PID compensation network

20
15
10
-5
-10
-15
0.01 0.1 1 10 100 1000 10000
fz1 fz2 fp1 fp2
f (kHz)
Phase response of the PID compensation network

60
40
20
Phase response (degrees)
-20
-40
-60
-80
-100
0.001 0.01 0.1 1 10 100 1000 10000
fz1 fz2 fp1 fp2

f (kHz)
Asymptotic approximated magnitude response of the PID

compensation network
1 1
=
2 R 2C 1 2 ( R 1 + R 3 )C 3
 f1 
 zd = 2 tan 
-1
 R 2C 1 = ( R 1 + R 3 )C 3 .

 f zd  K2
+ 20dB / decade
1 ( C 1 + C 2 ) R3 C 1C 2
= C3= .
2 R 3C 3 2 R 2C 1C 2 R 2 C1 + C 2 - 20dB / decade
K1
- 20dB / decade
 f1 
 pd = 2 tan  -1
 . Region of interest
f
 pd 
f
f zd f pd
Compensation in a buck converter with output
‫مثال طراحی‬ capacitor ESR
average output voltage: 5 V
Output Filter
input voltage: 12 V Qs Lo
load resistance RL = 5 Ω 100uH R3

R1 Co 100K
Phase margin=45 deg Vs
Dfw
100uF
RL
Fpwm=fsw=25khz 12V R2 Resr

0.5
R4
100K
Vref=2.5v
Z2
Design the compensation to
Comparator
shape the closed-loop Z1
Ve
magnitude response of the +
+
-
Vref
Currente - Error
switching converter to Driver Amplifier
achieve a -20 dB/decade roll- V2=3v

Sawtooth
Oscillator
off rate at the unity-gain
V1=1v
crossover frequency with a Pulse-Width Modulator
T=40us
sufficient phase margin for
stability
Compensation in a buck converter with output
capacitor ESR
Lo=100uH
Co=100uF
Resr=0.5 ohm
F=25kHZ
Vo=5V
Vin=12V
Compensation in a buck converter with
output capacitor ESR
R4
Beta=
R3 + R4
Vo=Vref/Beta  5=2.5/Beta  Beta=0.5
Ro 5
LoCo ( Ro  R e sr ) (100 x106 )(100 x106 )(5  0.5)
fo    1.517 kHz
2 2
• fodb, is chosen to be one-fifth of the switching

frequency
C2
PI or lead+integral Compensation network
R2 C1
 1  1 
  R 2 + 
H(s) =  sC 2   sC 1 
. R1
 1 1  Vfb -
R1  R 2 + +  . Verror
8
 sC 1 sC 2  +
1 + sR 2C 1
H(s) = . If C1>>C2 then  Vref
( + +
sR1 C 1 C 2 sR 2C 1C 2 )
Gloop(s)=Gc(s)xGpwmxVin(max)xGload(s)xBeta(max)
GT(s)=GpwmxVin(max)xGload(s)xBeta(max)
LM(GT(f))
GT(o)=9.5dB
Fesr=3.18k Fodb=5k
f
Fo=1.5k
GT(fesr)=-2.54dB
GT(fodb)=-6.5dB
Compensation in a buck converter with output capacitor ESR
Magnitude response of the buck converter
GT (ABCD)
Gloop (JKLMNO)
error amplifier EFGH
40
- 20dB / decade
J Compensation
- 40dB / decade network
20 K L
E
F G
M f1
A B - 20dB / decade
0
C
Open loop
gain GH(s) - 20dB / decade H
-20 N
-40
behzad.behnam@gmail.com O
100
-60
0.1 1 10 100 1000
Compensation in a buck converter with no
 f   f  ( R1 + R 3 )C 3
2 tan -1  1  - 2 tan -1  1  = 270 o - 135 o = 135 o . = = 0.13  F .
f  C1
 f zd   pd  R2
R3
 C 1C 3
 1  R 2 = 5.29 nF .
2  tan -1 f" - tan -1  "   = 135o . C2=
  f  [ C 1 - C 3 R3 ]
R2
1
C3= = 0.16  F .
2 f R3 phase(delay )  360* tdelay * f1
pd
‫مثال طراحی‬ capacitor ESR
average output voltage: 5 V Vin Vo
input voltage: 12 V
load resistance RL = 5 Ω
Phase margin>45 deg
Fpwm=fsw=25khz
Vref=2.5v
Design the compensation to
shape the closed-loop
magnitude response of the
switching converter to
achieve a -20 dB/decade roll-
off rate at the unity-gain V2=3v
crossover frequency with a
sufficient phase margin for V1=1v
stability T=40us
capacitor ESR
Lo=100uH
Co=100uF
Resr=0 ohm
F=25kHZ
Vo=5V
Vin=12V
Compensation in a buck converter with
no capacitor ESR
R4
Beta=
R3 + R4
Vo=Vref/Beta  5=2.5/Beta  Beta=0.5
• fodb, is chosen to be one-fifth of the switching

frequency
C2
R3 C3 R2 C1
R1
1 ( C1 + C 2 ) Vfb -
Verror
f p1 = f p2 = .
8
2 R 3C 3 2 R 2C 1C 2
Vref +
1 1
f z1 = f z2 =
2 R 2C 1 2 ( R1 + R 3 )C 3
K2
+ 20dB / decade
- 20dB / decade
R2 = R 2( R1 + R 3 ) K1
K 1= K2 - 20dB / decade
R1 R1R 3
Part of interest
behzad.behnam@gmail.com 105 f
f z1 f z2 f p1 f p2
Asymptotic approximated magnitude response of the PID
compensation network
1 1
=
2 R 2C 1 2 ( R 1 + R 3 )C 3

K2
 f1  + 20dB / decade
 zd = 2 tan 
-1
 R 2C 1 = ( R 1 + R 3 )C 3 .
 zd 
f - 20dB / decade
K1
- 20dB / decade
1 ( C1 + C 2 ) R 3 = C 1C 2 .
= C3
2 R 3C 3 2 R 2C 1C 2 R2 C1 + C 2 Region of interest
 f1 
 pd tan   .
-1 f
= 2 f zd f pd
 f pd 
Magnitude response of the buck converter
GT (ABC)
Gloop (HIJKL)
error amplifier DEFG
50
F
30
H
+ 20dB / decade
D - 20dB / decade
J
10 I
f1
A B G
0 E
- 20dB / decade
-10
K
- 40dB / decade - 40dB / decade

-30
behzad.behnam@gmail.com
C L
110
-50
The history
Applicat ion of
fast- switching
Invention of fully- controlled
Thyristor semiconductor
devices GTO
Mercury arc rectifier IGBT
GTR
Vacuum- tube rectifier Power diode Power MOSFET
Power MOSFET
Thyratron Thyristor Thyristor
Thyristor
(DSP)
(microprocessor)
1900 1957 mid 1970s late 1980s
Pre-history 1st phase 2nd phase 3rd phase
The insulated-gate bipolar transistor or
IGBT is a three-terminal power
semiconductor device, noted for high
efficiency and fast switching.
The Integrated Gate Commutated Thyristor (IGCT) is a new

high-power semiconductor device. An IGCT is a sub family of
the GTO thyristor and like the GTO thyristor is a fully-
behzad.behnam@gmail.com controllable power switch. 112
Thyristors thyristoren
IF d i
F
d t t
rr
UF td tf
t t t1 t2 t
F 0
UR
di R
dt
I
RP U
RP
Examples of commercial
Power Diodes
part number Rated max voltage Rated vag current VF(typical) tr(max)
Fast recovery rectifiers

1N3913 400V 30A 1.1V 400ns
SD453N25S20PC 2500V 400A 2.2V 20μs
Ultra-fast recovery rectifiers
MUR815 150V 8A 0.975V 35ns
MUR1560 600V 15A 1.2V 6ns
RHRU100120 1200V 100A 2.6V 60ns
Schottky rectifiers
MBR6030L 30V 60A 0.48V
444CNQ045 45V 440A 0.69V
30CPQ150 150V 30A 1.19V
Half- controlled device -- Thyristor
Controllable Switches
(Power Transistors)
• Can be turned “ON”and “OFF” by relatively very small control signals.
• Operated in SATURATION and CUT-OFF modes only.
• No “linear region” operation is allowed due to excessive power loss.
• In general, power transistors do not operate in latched mode.
• Traditional devices: Bipolar junction transistors (BJT), Metal oxide silicon field effect
transistor ( MOSFET), Insulated gate bipolar transistors (IGBT), Gate turn-off thyristors (GTO)
• Emerging (new) devices: Gate controlled thyristors (GCT). Or MCT (MOSFET controlled
Thyristor)
Bipolar Junction Transistor (BJT)
• BJT invented in 1948, by 1960

substantial power
handling capability
• Current Control Device (Ib
control Ic). It has 3-layer
p.n.p or n.p.n structure with 2
junctions.
• Ratings: Voltage: VCE<1000,
Current: IC<400A.
- Switching frequency up to 5kHz. Low on-state voltage:

VCE(sat) : 2-3V
• Low current gain (β<10). Need high base current to obtain reasonable IC.
(Increase current gain by Darlington Pairs – 100s)
• Expensive and complex base drive circuit. Hence not popular in new products.
SOA- second break-down requires snubber )
BJT Darlington pair
Metal Oxide Silicon Field Effect
Transistor (MOSFET)
Basic structure
Symbol
D D
G G
S S
N channel P channel
126
MOSFET Characteristics
• Basically low voltage device. High voltage device are available up to 600V
but with limited current. Can be paralleled quite easily for higher current
capability.
• Has positive temperature coefficient, results in nonexistence
of second breakdown. (avoiding the creation of hot spot)
• Has high input impedance, so easily connected to CMOS or TTL logic.
• Internal (dynamic) resistance between drain and source during on state,
RDS(ON), , limits the power handling capability of MOSFET. High losses
especially for high voltage device due to RDS(ON) .
• Dominant in high frequency (>100 kHz) and low power application .
Biggest application is in switched-mode power supplies.
• CoolMOS ? (Rds(on) half of the NORMAL MOSFET for the same V & I rating –
higher efficiency)
Examples of commercial power MOSFET
part number Rated max voltage Rated vag current Ron Qg(typical)
IRFZ48 60V 50A 0.018Ω 110nC
IRF510 100V 5.6A 0.54Ω 8.3 nC
IRF540 100V 28A 0.077Ω 72 nC
APT105M25BN 100V 75A 0.025Ω 171 nC
R IRF740 400V 10A 0.55Ω 63nC
8.3 nC
MTM15N40E 400V 15A 0.3Ω 110 nC
APT5025BN 500V 23A 0.25Ω 83nC
APT1001RBNR 1000V 11A 1.0Ω 150 nC
Insulated Gate Bipolar Transistor (IGBT)
• Developed 1980,widely
available 1990s
• Combination of BJT and
MOSFET characteristics.
– Gate behavior similar to
MOSFET - easy to turn ON
and OFF.
– Low losses like BJT due to
low on-state Collector-
Emitter voltage (2 – 3 V).
• Ratings: Voltage: VCE<3.3 kV, Current,: IC<1.2 kA

currently available. Latest: HVIGBT 4.5 kV/1.2 kA.
• Switching frequency up to 100 kHz. Typical applications:
20 – 50 kHz.
Examples of commercial IGBT
part number Rated max voltage Rated avg current VF(typical tf(typical)
Single-chip devices
HGTG32N60E2 600V 32A ) 2.4V 0.62μs
HGTG30N120D2 1200V 30A 3.2V 0.58μs
multiple-chip power modules_
CM400HA-12E 600V 400A 2.7V 0.3μs
CM300HA-24E 1200V 300A 2.7V 0.3μs
8.3 nC
Gate turn-off Thyristor (GTO)
Gate turn-off Thyristor (GTO)
• Behave like normal thyristor, but can be turned off

using gate signal (applied negative voltage across VGK)
• However turning off is difficult. Need very large reverse gate current (normally 1/5 of
anode current) and longer off time (tail current).
E.g.: a 2500 V, 1000 A
GTO requires a peak negative gate current of 250 A.
• Gate drive design is very difficult due to very large reverse gate current at turn off.
• Ratings: Highest power ratings switch:
Voltage: Vak < 5 kV; Current: Ia< 5 kA. Frequency < 2 kHz.
• Very stiff competition:
Low end-from IGBT. High end from IGCT
Power Switches: Power Ratings
Device Applications
(Base/gate) Driver circuit
Amplification: Example: Simple MOSFET gate
driver
Industrial Control
Industrial communications factory automation
• Industrial control: PLCs, motor controller,
sensors, solenoid valves
• Industrial Fieldbus solutions: SERCOS, Profibus,
Interbus, etc
• Industrial Ethernet: media converter and
industrial switches
Copper Copper
A Electrical Jack Electrical Copper Electrical Jack Electrical
B
Signal Signal Signal Signal
A Electric Optical
Fiber Optic
Optical Electrical
B
al SignalTransmitter Signal Signal Receiver Signal
Industrial Fiber Products

Page Avago Technologies Confidential
Application Example – Motor Control
IGBTs are used in many power applications such as wind turbines, solar inverters, and
motor drives. Controlling an IGBT with Fiber Optics makes it easy to provide the
necessary galvanic isolation and EMI immunity.
• IGBT switching speed of IGBT between 1Hz to 200 kHz. Typical < 20 kHz
• Switching up to 6500V or 30A (pulsed)
• Key application in medium and high voltage inverters
• Further use in VVVF (variable voltage variable frequency) PWM-, PAM- Inverters
Fiber Value Proposition: Galvanic Isolation , EMI-Immunity , No capacitive coupling

Page Avago Technologies Confidential
For point A  Q=IGxt - 15n=IGx100ns  IG=150mA
Rgate calculation
Rgate=(Vdrv-Vg)/IG  RGATE=(14-7)/150m=47 ohm
Opto-Coupler Isolated
MOSFET Drives
ACPL-P346/W346 2.5A Output Current Power MOSFET Gate
Drive Optocoupler with Rail-to-Rail Output Voltage in Stretched
SO-6 Package
Features
• 2.5A max. Peak Output Current
• Rail-to-Rail Output Voltage
• 120 ns max. Short Propagation Delay
• 50ns max. Propagation Delay Difference (PDD) Block Diagram
• Low LED Input Drive with Hysteresis
• MOSFET UVLO with Hysteresis ANODE 1 6 VCC
• High CMR (min. 35kV/µs@VCM=1.5kV)
• ICC < 5 mA max. Supply Current
• Very Small Stretched SO6 Package NC 2 5 VOUT
• Industrial Temperature Range: -40°C to 105°C

• Safety Approval UL, CSA and IEC/EN/DIN EN 60747- CATHODE 3 4 VEE
5-2
UVLO Threshold Regulatory Information
LED VCC – VEE “+ve” VCC – VEE “-ve” VO Part Creepage & IEC/EN/DIN EN UL VISO
Number Clearance 60747-5-2 VIORM
OFF 0 - 20 V 0 - 20 V LOW
ON 0–8V 0 – 7V LOW ACPL-W346 8mm/8mm 1140 VPEAK 5000VRMS/mi
n
ON 8–9V 7–8V TRANSITION
ACPL-P346 8mm/7mm 891VPEAK 3750VRMS/mi
ON 9 – 20 V 8 – 20 V HIGH n Page 154
Avago Technologies Confidential

Page 156
Page 157
Page 158
Power Switch Losses
• Main losses:
– forward conduction losses

– blocking state losses
– switching losses
– Gate drive losses
• Ideal switch:
– Zero voltage drop across it during turn-on (Von).
– Although the forward current ( Ion ) may be large, the losses on the switch is
zero.
• Real switch:
– Exhibits forward conduction voltage (between 1-3V, depending on type of
switch) during turn on.
– Losses (ON state) is measured by product of volt-drop across the device Von
with the current, Ion, averaged over the period.
• Major loss at low frequency and DC
• During turn-off, the switch blocks large voltage.
• Ideally no current should flow through the switch.
But for real switch a small amount of leakage current may flow. This creates
turn-off or blocking state losses
• The leakage current during turn-off is normally very small, Hence the
turn-off losses are usually neglected.
• Ideal switch:
– During turn-on and turn off, ideal switch requires zero
transition time. Voltage and current are switched
instantaneously.
– Power loss due to switching is zero
• Real switch:
– During switching transition, the voltage requires time to fall
and the current requires time to rise.
– The switching losses is the product of device voltage
and current during transition. For inductive load, the
switch loss can be given as
where fs is switching frequency ,IL = load current, tf & tr = rise and fall time of
load current
• Major loss at high frequency operation
Switching Characteristics
(Linearised)
Switching power
loss is proportional
to:
• switching
frequency
• turn-on and turn-
off times
DESIGN OF SNUBBERS FOR POWER CIRCUITS
Power semiconductors are the heart of power electronics equipment.
Snubbers are circuits which are placed across semiconductor devices
for protection and to improve performance. Snubbers can do many
things:
•Reduce or eliminate voltage or current spikes
•Limit dI/dt or dV/dt·Shape the load line to keep it within the safe
operating area (SOA)·
•Transfer power dissipation from the switch to a resistor or a useful
load·
•Reduce total losses due to switching·
•Reduce EMI by damping voltage and current ringing
Behzad Behnam
Snubbers
It is an example at TURN OFF state.

Remember that the current, i, is decreasing from the steady-state to zero with a decreasing
(negative) slope.
Thus, di/dt is negative.
And, the Vce is the max. voltage that the switch has to withstand/hold when it is OFF.
Snubbers
173
RCD Snubbers
• The voltage across the switch is bigger than the supply (for a short moment). This
is spike.
• The spike may exceed the switch rated blocking voltage and causes damage due
to over-voltage.
• A snubber is put across the switch. An example of a snubber is an RCD circuit
shown below – turn-off snubber
• Snubber circuit “smoothened” the transition and make the switch voltage rise
more “slowly”. In effect it dampens the high voltage spike to a safe value. Or an
electrical circuit used to suppress ("snub") electrical transients.
Snubbers
• In general, snubbers are used for:

 turn-on: to minimise large overcurrents
through the device at turn-on
 turn-off: to minimise large overvoltages across
the device during turn-off.
 Stress reduction: to shape the device switching
waveform such that the voltage and current
associated with the device are not high simultaneously.
• Switches and diodes requires snubbers. However,
new generation of IGBT, MOSFET and IGCT do not require it.
Snubber Circuit
Safe Operating Area
(SOA) - BJT
Second Breakdown – when

high voltage and high
current occurs
simultaneously during turn-
off, a hot spot is formed &
device failed by thermal
runaway
Safe Operating Area(SOA) -
MOSFET
Ideal vs. Practical power switch … (1)
Ideal vs. Practical power switch … (2)

Behnam Pres Buck 93-11-13

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‫دانشگاه ازاد اسالمی واحد کرج‬

Power Switching Power

• Dc-dc conversion: Change and control voltage magnitude

Power Switching Power

Functions of the power

2. Control charging of the battery

Power Electronics Module:

Under the hood:

Grid-tied solar: inverter converts

The system constructed in ECEN 4517/5517 Power

ac line input Boost Disk

Laptop power system

iPhone power system and charger

• General block diagram:

• The transistor can be conveniently

• Power loss is high at high current due to:

 When switch is open, no current flow in it

Since P=V.I, no losses occurs in the

 Switching regulator is the basis of all

• Diode is reversed biased.

Average inductor current = Average current in RL

From previous analysis,

For continuous operation,

This is the minimum inductor current to ensure

• Calculate D to obtain required output voltage.

Magnitude Response (dB)

an output filter with a 0 Lo

Phase Response (degree)

Block diagram representation for a closed-loop system

Gain margin = 8dB

Power in switch LPF + LOAD

‫تنها مجهولی که‬

Frequency response of the PI compensation network

Phase response of the PI compensation network

PID Compensation network

Magnitude response of the PID compensation network

Magnitude response of the PID compensation network

fz1 fz2 fp1 fp2

Phase response of the PID compensation network

fz1 fz2 fp1 fp2

Asymptotic approximated magnitude response of the PID

Magnitude responce (dB)

load resistance RL = 5 Ω 100uH R3

Fpwm=fsw=25khz 12V R2 Resr

achieve a -20 dB/decade roll- V2=3v

• fodb, is chosen to be one-fifth of the switching

• fodb, is chosen to be one-fifth of the switching

Magnitude responce (dB)

- 40dB / decade - 40dB / decade

Pre-history 1st phase 2nd phase 3rd phase

The Integrated Gate Commutated Thyristor (IGCT) is a new

Fast recovery rectifiers

• BJT invented in 1948, by 1960

- Switching frequency up to 5kHz. Low on-state voltage:

• Ratings: Voltage: VCE<3.3 kV, Current,: IC<1.2 kA

• Behave like normal thyristor, but can be turned off

(Base/gate) Driver circuit

Industrial Fiber Products

Fiber Value Proposition: Galvanic Isolation , EMI-Immunity , No capacitive coupling

Rgate=(Vdrv-Vg)/IG  RGATE=(14-7)/150m=47 ohm

• Industrial Temperature Range: -40°C to 105°C

Avago Technologies Confidential

– forward conduction losses

• Major loss at low frequency and DC