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EE2003C
Electronics
Lecture 9 – MOSFET Amplifier
1
Preview
• Basic characteristics of NMOSFET amplifier
• The complementary device of the n-channel
enhancement-mode MOSFET is the PMOSFET
(p-channel enhancement-mode MOSFET)
• CMOS device
• Analysis of linear amplifiers
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The MOSFET amplifier
• A linear amplifier magnifies an input signal and
produces an output signal whose magnitude is larger
and directly proportional to the input signal
• Small signal means that we can linearize the ac
equivalent circuit
• Electronic circuits that process analog signals are
called analog circuits
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NMOS common-source circuit with
time varying signal source
• A common-source circuit
with time-varying signal
source in series with gate dc
source
• Referring to Figure 4.1, vi
=vgs where vgs is the time
varying component of the
gate-to-source voltage
• For a linear amplifier, the
transistor must be biased in
the saturation region
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Summary of notation
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Common-source transistor
characteristics with dc load line
• Attached Figure shows sinusoidal variations in the gate-to-
source voltage, drain current, and drain-to-source voltage, as
a result of the sinusoidal source vi
• The dc load line and Q-point are functions of vGS, VDD, RD, and
the transistor parameters
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P-Channel Enhancement-Mode
MOSFET
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P-channel enhancement-mode
MOSFET (PMOSFET)
• The ideal current-voltage characteristics of the
PMOSFET are essentially the same as those of
the NMOSFET with the difference in the
convention stated as follows:
• The drain current is out of the drain and vDS is
replaced by vSD
• The saturation point is given by vSD(sat) = vSG+VTP
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Complementary MOSFETs (CMOS)
• CMOS technology uses both n-channel and p-
channel devices in the same circuit
• CMOS circuits, in general, are more
complicated to fabricate than circuits using
entirely NMOS or PMOS devices
• CMOS circuits have great advantages over just
NMOS or PMOS circuits
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Cross section of CMOS device
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Small-signal parameters
Figure 4.1
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Small-signal parameters (Cont’d 1)
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Small-signal parameters (Cont’d 2)
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Small-signal parameters (Cont’d 3)
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Small-signal parameters (Cont’d 4)
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Drain current versus gate-to-source
voltage characteristics
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Drain current versus gate-to-source
voltage characteristics
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Drain current versus gate-to-source
voltage characteristics
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Example: calculation of
transconductance
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Channel-length modulation
parameter λ
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Finite output resistance
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Simplified small-signal equivalent
circuit
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Small-signal equivalent circuit
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Example: transistor equivalent circuit
• Referring to attached circuit, VDD=10V and RD=10kΩ .
The transistor parameters are: VTh =2V, kn=0.5mA/V2,
and λ=0.
• A) Determine DGSQ such that IDQ=0.4mA. Calculate
VDSQ
• B) Calculate gm and ro, and determine the small signal
voltage gain
• C) If vi =0.4sin ωt, find vds.
Does the transistor remain in the
saturation region?
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Exercise 9.1
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Exercise 9.2
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Source follower Circuit
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Small-signal equivalent circuit
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Tutorial questions
• TQ4.1
• For an n-channel MOSFET biased in the
saturation region, the parameters are
kn=0.5mA/V2, VTh=0.8V, and λ=0.01V-1, and
IDQ=0.75mA. Determine gm and r0.
• (Ans. gm=0.22mA/V, r0=133 kΩ)
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• TQ4.2
• The parameters of an n-channel MOSFET are:
VTh =1V, ½ (µnCox)=18 µA/V2, and λ=0.015V-1.
The transistor is to be biased in the saturation
region with IDQ=2mA. Design the width-to-
length ratio such that the transconductance is
gm=3.4mA/V. Calculate r0 for this condition.
• (Ans. W/L =80.6, r0=33.3kΩ)
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