Electronic Devices

Semiconductor Diode
• PN junction diode

• Current equations

• Diffusion and Drift Current Densities

• Energy Band diagram

• Forward and Reverse bias characteristics

• Transition and Diffusion Capacitances

• Switching Characteristics

• Breakdown in PN Junction Diodes

 Semiconductor Diode
• Introduction to Semiconductors

• PN junction diode Constructions

• Zero Bias - Built in Voltage Calculation and Depletion Width calculation

• Forward Bias Characteristics

• Reverse Bias Characteristics

• Diffusion and Drift Current Densities

• Current equations

• Energy Band diagram

• Transition and Diffusion Capacitances

• Switching Characteristics

• Breakdown in PN Junction Diodes

Semiconductor
 Semiconductor
• A semiconductor is a material which has electrical
conductivity to a degree between that of a metal and
that of an insulator.
• Conductivity of
– Silicon  50 X 103 Ω–cm
– germanium  50 Ω-cm
• Semiconductors are the foundation of modern
electronics including
– transistors,
– solar cells,
– light -emitting diodes (LEDs),
– quantum dots,
– digital and analog integrated circuits
 Classification of Semiconductor
• Intrinsic Semiconductor

• Extrinsic Semiconductor
 Intrinsic Semiconductor
• A pure form of Semiconductor

• The concentration of electrons (ni) in the conduction band =

concentration of holes (pi) in the valance band. (ni = pi)

• Conductivity is poor

• Eg. Pure Silicon, Pure Germanium (Tetravalent)

 Extrinsic Semiconductor
• A Impure form of Semiconductor

• To increase the conductivity of intrinsic semiconductor, a small

amount of impurity (Pentavalent or Trivalent) is added.

• This process of adding impurity is known as Doping.

• 1 or 2 atoms of impurity for 106 intrinsic atoms.

• Electron concentration ≠ Hole concentration

• One type of carrier will predominate in an extrinsic semiconductor

Classification of Extrinsic Semiconductor
• N Type Semiconductor

• P Type Semiconductor
 N Type Semiconductor
• A small amount of pentavalent impurities is added
• It is denoting one extra electron for conduction, so it is called
donor impurity (Donors)
• +ve charged Ions
• Electron concentration > Hole Concentration
• Most commonly used dopants are
– Arsenic,
– Antimony and
– Phosphorus
 P Type Semiconductor
• A small amount of trivalent impurities is added
• It accepts free electrons in the place of hole, so it is called
Acceptor impurity (Acceptors)
• - ve charged Ions
• Hole concentration > Electron Concentration
• Most commonly used dopants are
– Aluminum,
– Boron, and
– Gallium
 Mass Action Law
• Under thermal equilibrium the product of the free electron
concentration and the free hole concentration is equal to a
constant equal to the square of intrinsic carrier
concentration.

np = ni2
 Charge Density in a Semiconductor

Positive Charge Density Negative Charge Density

p  Hole Concentration n  Electron Concentration

N  Concentration of donor ions N  Concentration of Acceptor ions

D A

Total + ve charged density = Total – ve charged density

p + ND = n + NA
 Charge Density in a Semiconductor
P Type Material N Type Material

NA > ND {ND ≈ 0} ND > NA {NA ≈ 0}

pp + ND = np + NA pn + ND = nn + NA
ND = nn – pn { nn >> pn}
NA = pp – np { pp >> np}
ND = nn
NA = pp nn pn = ni2
Mass action Law:

Mass action Law: np pp = ni2

2
2 ni
np 
ni pn 
ND
NA
 Conductivity of Semiconductor

The Conductivity of a semiconductor is   qp p  qn n

1
The Resistivity of a semiconductor is 


q = 1.6*10-19 coulomb
 Problems
Consider an Intrinsic Silicon bar of cross section 5 cm2 and length
0.5 cm at room temperature 300o K. An average field of 20 V/cm
is applied across the ends of the silicon bar.
Assume, Electron mobility = 1400 cm2/v-s
Hole mobility = 450 cm2/v-s
Intrinsic carrier concentration = 1.5*1010 cm3
Calculate,
I. Electron hole component of current density
II. Total current in the bar
III. Resistivity of the Bar
PN Junction Diode

anode cathode
Dopant distribution in PN Junction Diode
Dopant distribution in PN Junction Diode

E
Space Charge Region

p~0, and acceptor n~0, and donor ions

ions are exposed are exposed
Calculation of Depletion Width
Calculation of Depletion Width
 Calculation of Depletion Width
Similarly, In N side region,

Therefore, the total built in potential Vbi

W.K.T, Thermal Equilibrium,

Substituting in the above equation,

Calculation of Depletion Width
PN Junction Forward bias
Forward bias Characteristics

( - VF)
PN Junction Reverse bias
Reverse bias Characteristics

Reverse Saturation Current

( + VR)
Characteristics of PN Junction
 Drift Current
JDrift  J p Drift  J n Drift
J p Drift  qp p E A/cm2

J n Drift  qn n E A/cm2

JDrift  qp p E  qn n E

JDrift  q ( p p  n n ) E
JDrift   .E
Diffusion Current
Diffusion Current
Concentration Gradients

Diffusion Coefficients
 Total Current
Total Current in P type semiconductor
Jp = Jp Drift + Jp Diffusion

Total Current in N type semiconductor

Jn = Jn Drift + Jn Diffusion
 Diode Current Equation
The Diode equation relating the voltage V and current I is given
by,