MODELING AND SIMULATION OF

MULTIPHASE ARC PLASMA FOR

MATERIAL PROCESSING.

Supervisor : Dr. P K Shadhu Khan

Professor, Dept. of Elect & Electronic Engineering
Chittagong University of Engineering & Technology

1
 Thesis Proposal

Student particulars:
• Name of the student
• Roll No.
• Session
• Present Address
• Department
• Date of Enrolment
• Tentative title of the thesis :MODELING AND SIMULATION OF
:MOHAMMAD RAFIQUL ALAM
:04PEE001P
:2004-2005
:Department of Elect. Electronic Engg.
CUET Chittagong
:Electrical and Electronic Engineering
:May 2005
MULTIPHASE ARC PLASMA FOR
MATERIAL PROCESSING

2
 Background and present status
Fundamentals of plasmas:
• partially or wholly ionized gas
• considered the 4th State of matter.
• weak coupling between pairs of particles, but
• strong collective interactions:
Debye shielding.
electron plasma oscillations.
• a condition of matter beyond gaseous (amounting
for >99% of the matter of the visible universe).
• exist from astronomical to microscopic scales
• behave as quasineutral mixture of charged fluids
and neutral gas
• plasma is electrically conducting, and can exhibit collective
dynamics.
3
 Schematic view of plasma
Solid
Heat

More Heat Liquid

Yet More Heat

Gas Plasma 4
 Making a Plasma
• A partially ionized gas
created by application of
an electric field. Positive
ion/electron pairs are neutrals
(radicals, unreacted gas)
created by ionization Glow Sheath
reactions, maintaining discharge ions (dark space)
overall charge neutral. electrons

• Commonly, radio- Substrate

frequency (rf) at 13.56
MHz is used to create the charged particles
glow discharge. are accelerated by
the electric field
• Typical pressures are
between 1 mtorr and 5
torr.
5
 Making a Plasma Contd.
Energy must be added in the form of :
• Heat – Temperature must be in excess of 4000 0C
• Radiation
• Electric field
• Magnetic field
By
• Direct current (glow discharge)
– Electrode have fixed potentials
• rf
– Oscillatory behavior of electrode potentials
• Magentron
– Magnetic field used to shape plasma field

• Plasma Formation:
1. begins with neutral gas particles (atoms or molecules)
2. there are also some free electrons present
• the presence of heat energy generates more free electrons
3. an electric field is introduced that accelerates the free electrons
4. the accelerated free electrons collide with neutral gas molecules
5. following the collision, one of three things can happen:
a. dissociation
b. ionization 6
c. excitation
 Classification of Plasma
Based on temperature
1. Non-thermal Plasma: (low Temperature and low
Pressure plasma where electron temperature equal
the heavy particle [atom, ion, molecule] temp.)
2. Thermal Plasma
Based on generation technique

1. Induction Plasma
2. Arc Plasma (DC and AC Arc)
3. Microwave Plasma
4. Capacitively coupled Plasma
5. Dielectric barrier discharge Plasma 7
 Reactions of Energetic Electrons

• Collision of energetic electrons with neutrals can

cause ionization. Typically >8 eV is required. (ex.
13.6 eV needed to ionize an H atom)
• Collisions with less energetic electrons can produce
electrically excited species. Some will give off light
when they decay to their ground state. This
phenomena gave rise to the term “glow discharge.”
The emitted light can also be used to perform
optical emission spectroscopy, which can identify
excited species based on the wavelength of the
emitted light.
• Numerous possible reactions and species (complex
8
chemistry)
Gas-Phase (Homogeneous) Plasma Reactions
Dissociation: e* + AB  A + B + e
Ionization
Atomic : e* + A A+ + e + e
Molecular : e* + AB AB+ + e + e
Excitation
Atomic : e* + A A* + e
Molecular: e* + AB AB* + e
Recombination
Atomic : e + A+ A
Molecular: e + AB+ AB
Relaxation
Atomic : A* A + hn
Molecular: AB* AB + hn
* indicates high energy species
9
 Plasma Parameters

Excitation Frequency
(adapted from Kay et. al., 1980)
rf-13.56 MHz
low- kHz Gas Flow Rate
dual
µwave
Excitation Power ne , f(E)
Reactor
Geometry
Magnetic Field N ,t
Chemical
Nature of Pressure
Feed

Chemical
Surface Nature of
Geometry Consequences in Surface
Plasma-Particle Surface
Interaction
Electrical
Potential of substrate
10
 The Main Factors in MHD

 Motion in Static Magnetic Field =

dv
m  q( v  B )
dt
 Single Charged Particle Motion in Static
Electric and Magnetic Fields =

dv
m  q( E  v  B )
dt

11
 Motion in Static Magnetic Field
dv
m  q( v  B )
dt
• Motion  to B i.e. in x-y plane d 2vx
2
  c vx  0
2

dt
dv x
m  q( v y B ) d 2v y
dt 2
  c vy  0
2

dt
dv y
m   q( v x B ) c 
qB
dt m
 cyclotron frequency
MHD Equations
• The mathematical description of MHD flow is based on the solution of
Boltzmann system of equations determined the velocity distribution
function f(t,r,v) of different plasma particles. The particle density ,
velocity v and temperature T are obtained from integrals:
• = f(t,v.r) mdv;
• v= f(t,v.r) mvdv;
• T= f(t,v.r) (mv2/3)dv;
• taking in account the volume electromagnetic force and energy 12
dissipation
 The Base System of Equations
• The plasma flow as continuous media
• Continuity:
• /t+ div(v) = 0, -mass density; e,i,a
• Momentum:
• dv/dt = - P + eE + jxB, Pressure P=NkT;
• Energy:
• d( + v2/2)/dt = - divq + jE
• Operator:
• d/dt= / t + vx/t + vy/t + vz/t
• Maxwell Equations:
• rot H = (4j + E/t)/c
• rot E = - (H/t)/c
• div E = 4e
• div H = 0
• Ohm Law: 13
• J = {E+vxH/c+gradPe/cne+jxH/cene}
 Plasma Oscillations

  E  4e(n0  ne ) Poisson’s equation
 
ne    ne v  0 Particle conservation
t
   
ne me v    ne me vv   ne eE Momentum conservation
t
~ 
Linearize ne  n0  n (r , t ) ni  n0
  ~  Assume 
v  v 0  v (r , t ) v0  0
  ~  
E  E0  E ( r , t ) E0  0
 ~ ~
   E0  E     E  4en~ Linearized
  Poisson’s equation
14
 • Glow Discharge:
– A plasma is identified by a visible glow.
– The color of the glow is dependent on the gasses present in the
chamber.

• Why Plasma?
– Light Generation: Fluorescent light bulbs, Neon lights.
– Low Temperature Chemical Reactions
– Creation of Unique Materials
• that could not be accomplished via ordinary chemical means.
– Accelerated Chemical Reactions for greater throughput processing.
– Highly Directional Processes: anisotropic etching.
– More Efficient Energy Utilization 15
– Less Waste Product Generation
 Many Industrial/Commercial
Applications of Plasmas
Processing: Surface Processing, Non equilibrium (low pressure), Thermal (high
pressure)
Volume Processing: Flue gas treatment, Metal recovery, Waste treatment
Chemical Synthesis: Plasma spraying, Diamond film deposition, Ceramic
powders
Light Sources: High intensity discharge lamps, Low pressure lamps, Specialty
sources
Surface Treatment: Ion implantation, Hardening, Welding, Cutting, Drilling
Space propulsion: plasma thrusters, fusion powered propulsion
Flat-Panel Displays: Field-emitter arrays, Plasma displays
Radiation Processing: Water purification, Plant growth
Switches: Electric Power, Pulsed power
Energy Convertors: MHD converters, Thermionic energy converters
Medicine: Surface treatment, Instrument sterilization
Beam Sources
Lasers: Free-electron lasers, X-ray lasers
Material Analysis
High-power RF sources 16
 Examples of Plasma
 Plasma models are addressing industrially  Thrusters
relevant problems…all these technologies
have been addressed

 Lighting

 Spray Coatings

 Materials Processing 17
 Displays
 Plasma Processing
 Plasma processing technologies are of vital importance to several of the
largest manufacturing industries in the world. Foremost among these
industries is the electronics industry, in which plasma-based processes
are indispensable for the manufacture of very large-scale integrated
microelectronic circuits.
 Plasma processing of materials is also a critical technology in, for
example, the aerospace, automotive, steel, biomedical, and toxic waste
management industries.
 Applications of plasma-based systems used to process materials are
diverse because of the broad range of plasma conditions, geometries,
and excitation methods that may be used.
 Plasma surface activation involves the creation of surface chemical
functional groups through the use of plasma gases - such as oxygen,
hydrogen, nitrogen and ammonia - which dissociate and react with the
surface .
 Plasma deposition involves the formation of a thin polymer coating at
the substrate surface through polymerization of the process gas.
 Plasma processing operates at near-ambient temperatures with no risk
18
of heat exposure.
 Plasma Processing Contd.

 A semiconductor wafer undergoes a wide range of processes

before it is transformed from a bare silicon wafer to one
populated with millions of transistor circuits.
 Such processes include physical or chemical vapor deposition,
(PVD, CVD), chemical-mechanical planarization (CMP),
plasma etch, rapid thermal processing (RTP), and
photolithography.
 Model-based approach to be an effective means of designing
commercial controllers for both semiconductor and advanced
materials processing.

19
 Plasma processing

Plasma Plasma
chemistry physics

Surface
chemistry

Every process is a complex interaction between

• gas phase chemistry
• plasma conditions
• surface phase chemistry/conditions 20
 Uses of Plasma Processing in Semiconductor Industry
• Chemical Vapor Deposition (CVD)
– chemical reactions occur at lower temperatures in the plasma
• Chamber Cleaning
– able to remove film buildup from the reactor walls
• Etching (Patterning)
– vertical sidewalls (anisotropic etching)
• Dry Cleaning
– in place of wet chemical rinses to remove residues and
contamination
Plasma-Enhanced CVD (PECVD)
• Used for dielectrics like silicon dioxide and silicon nitride
• High quality, defect free films
• Can cover non-planar surfaces
• Patterned by plasma etching
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• Deposition occurs on silicon wafer and on reactor walls
 General types of processing discharges
 DC Glow
Cold Cathode
Hot Cathode (‘Filament’ discharge)
Magnetron (Magnetized cold cathode)
 Radio Frequency (~0.1 - 100 MHz)
Capacitively Coupled (rf)
Inductively Coupled Plasma (ICP)
Helicon (Magnetically enhanced wave coupling)
 Microwave (~1 - 20 GHz)
Microwave
Electron Cyclotron Resonance (ECR)
(Magnetically enhanced wave coupling)
 Neutral Beams
 Thermal Plasmas
Arcs
Torches
etc.
The choice of source depends on the desired process.
We will look at some of the major sources for Si Processing
22
(and a few others).
Inductively coupled
B
plasmas (ICP)

Current in wire

Current in Plasma

Other Names: Radio frequency inductive (RFI) &

Transformer coupled plasmas (TCP)
23
 Induction Thermal Plasma (ITP)

• High enthalpy & highly reactive

• In-flight treatment
• Reduced emission of greenhouse gases
• Short treatment time (2-3 hours)
• Low running cost

Granulated In-flight melting

raw materials 2m
In-flight melting
22 m
3m 0.6 m

Forming step
High speed stirring High speed refining 24
Features of Inductive Thermal Plasma
High Enthalpy
High Chemical Reactivity
High Growth Rate of Synthesized Products
Rapid Evaporation Rate
High Purity due to Absence of Electrode
Large Volume of Plasma
Low Velocity

Applications of Thermal Plasmas

 Nucleation and Synthesis by Thermal Plasma
 Thermal Plasma Chemical Vapor Deposition
 Thermal Plasma Assisted Fine Coating
 Thermal Plasma Surface Treatment and so on….

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 Semiconductor Applications of Plasma
• Etching:
• Wet Etch
– only features > 3m
– isotropic (sloped walls)
– more contamination issues
– greater resist lifting
– environmental impact
• Dry (Plasma) Etch
– submicron features
– anisotropic (straight walls)
– less contamination issues
– less resist lifting
– lower environmental impact
– endpoint detection capability
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 Why modeling
 Modeling enhanced experiments to optimize design of high
plasma density CVD.
 Sped development with improved understanding.
 Modeling is being to provide added value to process and
equipment development.
Mechanisms
Timeliness and Relevancy
 Modeling aid to achieve required unprecedented control of
reactant fluxes from the plasma onto the wafer: Uniformity,
Composition, energies.
 Plasmas are and will continue to be indispensable for etching,
deposition and cleaning in microelectronics fabrication.
 With many of choices of plasma reactors to perform the same
function, a rapid, low cost method is needed to select the best one.
 Currently, computer-based modeling and plasma simulation
27
are inadequate for developing plasma reactors.
 WHAT IS NECESSARY TO ACHIEVE GOALS
 A reliable and extensive plasma data base against which the
accuracy of simulations of plasmas can be compared.
 A reliable and extensive input data base for calculating plasma
generation, transport and surface interaction.
 Efficient algorithms and supercomputers for simulating magnetized
plasmas in 3 dimensions.
 Low Temperature Plasmas:
There has been tremendous progress in the development
predictive models which not only reveal the complex dynamics
of a plasma, but are also part of improving applications. Extreme
challenges face modeling and the allied sciences to develop
comprehensive and validated theories, computer models and
databases that place predictive capabilities in the hands of
technologists. “This represents the highest level of challenge
and the highest potential return…to both quantify and advance
our understanding of low temperature plasmas, and to leverage
that understanding by speeding the develop of society 28
benefiting technologies.”
 The use of thermal plasma in materials processing industries is becoming an
increasingly active and attractive field for the development of new technology.
 The potential applications of thermal plasma processing technology cover a
wide range of activities, such as: the extraction of metals, the refining/alloying
of metals/alloys, the synthesis of fine ceramic powders, spray coatings, and the
consolidation and destruction of hazardous wastes.
 Plasma Science has excellent opportunity to take advantage of the exciting
advances in Scientific Computing (coupled to Experiment and Theory) to
accelerate scientific understanding and innovation in fusion research.
 The broad area of my research is the computational modeling of physical
systems.
Matsura et al [1] developed a new type of arc plasma reactor with 12
phase alternating discharge for synthesis for carbon nanotubes.It is tedious and
very difficult to measure plasma temperature and measuring material
properties experimentally.
So modeling of arc plasma is essential to predict plasma temperature, velocity
and particles parameters. That’s why aim of this work is to develop a
mathematical model for this arc plasma system and solving this model will
predict the plasma temperature, velocity and other parameters.
29
 Challenges & objectives
Challenges
• Development of Arc plasma-based in-flight treatment technology
• Calculation of Electric and magnetic fields within the torch.
• Calculation of Joule heating from the electromagnetic fields.
• Characterization of particle behavior during treatment
• In-flight particle temperature history
• Plasma-particle energy exchange dynamics
• Consequences of plasma-particle interactions
Objectives
Determine the transport properties of arc plasma generation.
To develop plasma- interactive flow model for material processing.
To determine Plasma temperature, velocity, current, power etc.
To predict particle trajectories, temperature and size.
30
 To determine the energy transferred to particles.
Determination of the transport properties of arc plasma generation
To simulate the Plasma temperature and velocity with in the
arc chamber we need to measure transport and
thermodynamic properties of plasma gases.
 Transport properties are:
1. Viscosity
2. Thermal conductivity
3. Electrical conductivity
 Thermodynamic properties are:
1. Mass density
2. Enthalpy
3. Specific heat at constant pressure
We shall calculate these properties for a mixture of Ar and O2
at different mixture ratios. In the literature these properties
are available for Ar and Cl2 31
 To determine Plasma temperature, velocity etc.

 The Plasma temperature within the arc chamber is

very difficult to measure experimentally. Though some
researcher measure that using enthalpy probe. That is
why in this work our aim to predict the plasma
temperature through computer simulation solving the
conservative equations. The temperature should be
within 6000 ~10,000 K.
 The Plasma velocity also is very difficult to measure
experimentally.Attempt to predict Plasma velocity
through simulation by solving plasma dynamics.
The Plasma velocity may be around 10~50m/s.
32
 Methodology
Methods are as follows:
• Design a physical model of multiphase ARC Plasma system.
• Develop mathematical model for multiphase arc plasma.
• Calculation of Thermo physical properties of plasma gas (Ar, O2,
H2 etc)
• Set up appropriate boundary conditions.
• Simulation of the model.
• Using the boundary conditions and gas properties we have to
solve the mathematical model to predict and particles parameters.
List of courses completed:
First semester Grade
EEE 6401 VLSI Technology and Device modeling A+
2nd semester
EEE 6605 Fundamental & Appli. Of Plasma Technology A+
EEE 6403 MOS Devices A33+
 Prospects of material synthesis in Bangladesh

 Although at present, there is no semiconductor material

processing industries in Bangladesh, but it is possible to
develop skilled personnel in this field by establishing
research and training center.
 A large number of applications for arc plasma have been
used for welding and cutting metals up to this time; which
can be used as the energy source with effective heat
efficiency in our existing metallurgical industries.

34
 Schedule of works
i) Physical Modeling :10-06-2008
ii) Preparation of Mathematical modeling:01-03-2009
iii) Simulation program develop :20-09-2009
iv) Simulation :01-01-2010
v) Analysis of simulated results :12-02-2010
vi)Finalization of results :12-09-2010
vii) Draft thesis submission :12-12-2010
viii) Final thesis submission :02-02-2011

35
 Costs
• Books, Journals Tk. 50,000
• Paper (Duplicating etc) Tk. 20,000
• CD, Pen drive and toner Tk. 20,000
• Software Tk. 30,00
• Thesis preparation Tk 15,000
• Total Tk.1,35,000

Name of the Supervisor

Dr. P K Shadhu Khan

Professor
Department of Elect. & Electronic Engineering
Chittagong University of Engineering and Technology
36
 Doctoral Committee
1. Prof. Dr. P K Shadhu Khan Supervisor Chairman
Professor, Department of Elect and Electronic Engineering
Chittagong University of Engineering and Technology
2. Dr. Md Mofazzal Hossain Co-supervisor Member
Assoc Prof., Department of Electrical & Comm. Engg
East West University, Dhaka
3. Head, Departmednt of Elect and Electronic Engineering Member
Chittagong University of Engineering and Technology
4. Prof. Dr. Md. Tajul Islam, Member
Professor, Department Of Mechanical Engineering
Chittagong University of Engineering and Technology
5. Prop. Dr Md. Abdur Rashid Member
Professor, Department. Of Physics
Chittagong University of Engineering and Technology
6. Prof. Dr. Farquzzaman Chowdhury Member
Professor, Department. Of Physics
Chittagong University of Engineering and Technology
7. Prof. Dr. Aynal Haque External Member
Professor, Department of Elect and Electronic Engineering
Bangladesh University of Engineering and Technology 37
THANK YOU

38
Work done so far

39
 Summary of work done so far
• Course work completed
• Literature review done and continued
• Mathematical model attempted and partially
completed
• A paper has been published in an
international conference

40
 Plasma model: conservation equations
Mass conservation:
Encircled Source Terms include
u  S C
p the plasma-particle interaction
effects.
Momentum conservation:

 u  u  p     u J B S pM
Energy conservation:
  
 u h     h   J E Qr  S pE
 Cp 
Species conservation:
 u y    Dmy   S Cp
Maxwell’s EM field equation:
 2 A c  i 0A c 41
 Particle model
Net energy transferred to a particle: Heat transfer coefficient:
{
Q  d p2 hc T  Tp } {d   T
2
p s
4
p  Ta4 } hc 
f
Nuf f1
Plasma Energy Radiated Energy dp
Nussle number: 0.38
 C p 
0.6
1/ 3     
dT p 6Q
 Tp<1000 Nu f  ( 2.0  0.6 Re f Prf )
1/ 2
  
C 
 p d p C pp  s s 
3
dt  ps 
dTp 6Q Momentum equation for
 1000  Tp  1600
dt p d p 3Cpp individual particle:
du p 3   
dTp

6Q
1600<TpTb   C D (u p  u )U R   g
dt 4  d 
dt p d p 3Cpp  p p 
dx 6Q dv p 3   
 1000  Tp  1600   C D (v p  v)U R  
dt  p d p 3 H m dt 4  d 
 p p 
dd p 2Q Drag Coefficient:
 Tp = Tb
 p d p H v CD  CDf f 2 f 3
2
dt 42
 Assumptions & computation procedure
Plasma Model Start

• LTE (local thermodynamic equilibrium).

Compute plasma fields
• Optically thin. without particles

• Steady and Laminar.

Compute particle
• 2-Dimensional. trajectories, temperature
and size using plasma
• Negligible viscous dissipation. fields

Evaluate particle source

Particle Model terms

 Particles experience only drag and gravity forces.

Compute plasma fields
 Thermophoretic force is negligible for the particles with particle source terms
diameter under investigation.
Particle-particle interactions are neglected.
 Particle charging effect is negligible. Did any plasma
field change
Yes
 Temperature gradient inside the particle is negligible.
No
 Particle rotation is not taken into account. Stop 43
12 Phase Plasma Reactor

44
 12- phase plasma reactor
Equation to calculate electric and magnetic field.
Different phase voltage
Different phase voltage
i 1
vi  Vm sin( wt  ) where, i  1,2,  12
6
1. V1  Vm sin wt  Vm 0 3
0
10. V10  Vm sin( wt   )  Vm   2700
2
2. V2  Vm sin( wt  1  )  Vm   300 5
6 11. V11  Vm sin( wt   )  Vm   3000
3. V3  Vm sin( wt  1  )  Vm   600 3
11
31 ;
12. V12  Vm sin( wt   )  Vm   3300
4. V4  Vm sin( wt   )  Vm;   90 0
6
2
2
5. V5  Vm sin( wt   )  Vm   1200
3
5
6. V6  Vm sin( wt   )  Vm   1500
6
7. V7  Vm sin( wt   )  Vm   1800
7
8. V8  Vm sin( wt   )  Vm   210
0

46
9. V9  Vm sin( wt   )  Vm   240
0
45
3
 Ip 
Current density J = J   Vp
Per phase density Ac L

1. J1  J sin wt  J 00 7. J 7  J sin( wt   )  J   1800

7
2.
1
J 2  J sin( wt   )  J   300 8. J 8  J sin( wt   )  J   2100
6 6
4
3.
1
J 3  J sin( wt   )  J   600 9. J 9  J sin( wt   )  J   2400
3 3
3
4.
1
J 4  J sin( wt   )  J   900 10. J10  J sin( wt   )  J   2700
2 2
5
5.
2
J 5  J sin( wt   )  J   1200 11. J11  J sin( wt   )  J   3000
3 3
11
6.
5
J 6  J sin( wt   )  J   1500 12. J12  J sin( wt   )  J   3300
6 6

46
 To calculate magnetic vector potential.
 
 Ai   0 J i where i  1,2,........,12
2

   2  Laplace Operator or Laplacian

Where
  2  2  2 
f   2
f  i j k
x 2
y 2
z 2

   
  A1   0 J1   0 ( J cos  sin wt i  J sin  sin wt j )
2

 
 A1  A1  2 A1
2 2  

     0 ( J cos  sin wt i  J sin  sin wt j )
x 2
y 2
z 2

and   A  Curl of A
 
Bi    Ai where, i  1,2,........12

  

i j k
  Azi  Ayi   Azi  2 Axi   Ayi  Axi 

   (  ) i (  ) j (  )k
Bi    = y z x z x y
 x y z     
   B i  Bxi i  Byi j  Bz47
i k
 Axi Ayi Azi 

Torch dimensions & discharge conditions
Q1 Q2 Q3
Discharge conditions
Twall r1=1 mm
L1 rt=4.5 mm Plasma Power: 10 kW
Lt
L2 r2=6.5 mm Pressure: 0.1 MPa
r3=21.5 mm
r1 dc
rt r0=22.5 mm Induction Frequency: 4 MHz
r2 rc=32 mm Gas flow-rate:
r3
r0 L3 L1=19 mm
rc Lt=52 mm Carrier gas (Q1): 6-9 lpm Ar
L2=65 mm Plasma gas (Q2): 2 lpm Ar
L3=190 mm
Sheath gas (Q3): 22 lpm Ar & 2 lpm O2
dc=5 mm
Twall=1.5 mm

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THANK YOU

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