Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
Circuits
Lecture # 4 Pass Transistors and
Transmission Gates
Outline
• A Brief History
• CMOS Gate Design
• Pass Transistors
• CMOS Latches & Flip-Flops
• Standard Cell Layouts
• Stick Diagrams
2
CMOS Logic Structures
Vin Vout VC = 0
8
Pass Transistors
s d
s d
Pass Transistors
• At right,
– (a) is a 2-input NAND pass
transistor circuit
– (b) is a 2-input NOR pass
transistor circuit
• Each circuit requires 8
transistors, double that
required using conventional
CMOS realizations
Pass Transistor
• This is the reason that N-Channel transistors are used in the pull-down
network and P-Channel in the pull-up network of a CMOS gate.
Otherwise the noise margin would be significantly reduced.
TRANSMISSION GATES
N Switch
0
S 1
G
S’ 0
1
P Switch
Open Circuit, High Z
Bi-directional Switch
Transmission Gates
• A transmission gate is a essentially a switch that connects two
points. In order to pass 0’s and 1’s equally well, a pair of
transistors (one N-Channel and one P-Channel) are used as
shown below:
a : Input
b : Output
g , gb : Control Signal
0, Z (high impedance)
g
1, b a
Analysis of CMOS TG (1/4)
A : Input
B : Output
C : Control Signal
0, Z (high impedance)
C
1, B A
Transmission Gates (Pass Gates) (1/2)
– With body effect, for VDD = 5V, the value on Vout can be around 3.0 to 3.5
V. This reduced level diminishes NMH and the current drive for the gate or
gates driven by the pass transistor.
– For both NMOS and CMOS, the lack of current drive slows circuit
operation and NMH can be particularly problematic. As a consequence, in
CMOS, a pFET is added to form a transmission gate.
Transmission Gates
– Symbols:
C
C
A B A B
C
C
Circuit Popular Usage
22
Transmission Gates (2/2)
– Operation
• C is logic high Both transistors are turned on and provide a
low-resistance current path between nodes A and B.
• C is logic low Both transistors will be off, and the path
between nodes A and B will be open circuit. This condition is
called the high-impedance state.
– With the parallel pFET added, it can transfer a full VDD from
A to B (or B to A). It can also charge driven capacitance
faster.
– The substrates of NMOS and PMOS are connected to
ground and VDD, respectively. Therefore, the substrate-bias
effect must be taken into account.
23
Transmission Gate Circuits
y x s iff s 1
• Exercise
y x s iff s 1
XOR gate
XOR gate
B A F
0 0 0
0 1 1
1 0 1
1 1 0
Logic Design using TG (2/3)
• TG based XOR/XNOR
ab ab a b a b a b a b a b
(2.81) (2.82)
• TG based OR gate
f a (a) a b
a a b (2.83)
ab
Figure 2.64 An XNOR gate that used both TGs and FETs
TRANSMISSION GATE
s
TG0
P0
s F
P1
TG1
s
b b
a a
ab ab
b b
b XOR b XNOR
Tristates
EN
Nonrestoring Tristate
EN
A Y
EN
32
Tristate Inverter
A A
A
EN
Y Y Y
EN
EN = 0 EN = 1
Y = 'Z' Y=A
Complementary Pass-Transistor Logic (CPL)
• Utilizes CMOS transmission gate (or just the single polarity version of TG) to perform
logic
– Logical inputs may be applied to both the device gates as well as device source/drain regions
– Only a limited number of Pass Gates may be ganged in series before a clocked Pull-up (or pull-
down) stage is required
• (a) and (b) show simple XNOR implementation:
– If A is high, B is passed through the gate to the output
– If A is low, -B is passed through the gate to the output
• (c) shows XNOR circuit including a cross-coupled input with P pull-up devices which
does not require inverted inputs
R. W. Knepper
SC571, page 5-23