PN JUNCTION DIODE

NO NAME ID NUMBER

1 MUHAMAD ‘IZZUL 50215117317

FITRI BIN
JAMALUDIN
2 MUHAMAD FAID BIN 50215117265
MISNAN
PN JUNCTION

A p–n junction is a boundary or interface between two types

of semiconductor materials, p-type and n-type, inside a single
crystal of semiconductor. The "p" (positive) side contains an
excess of holes, while the "n" (negative) side contains an
excess of electrons in the outer shells of the electrically
neutral atoms there.

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 Continue

 This allows electrical current to pass through the junction only

in one direction. The p-n junction is created by doping.

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Doping

◂ Doping is the process of adding impurities to the

device to increase the number of free current
carrier.
◂ One block is doped with trivalent impurity atoms to
form the P region that acts as acceptors with holes
as majority charge carriers and also the adjacent
block is doped with pentavalent impurity atoms to
create the N region that acts as donors with
electrons as majority charge carriers.

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DIODE
◂ The diode can be discovered as
a straightforward bipolar semiconductor device.
◂ The characteristics of diode appearance to be a graph
of current that a diode produces when the
voltage carried out.
◂ A perfect diode may
be clearly prominent by current and voltage curve.
◂ It allows the current to flow entirely in forward directi
on and efficiently blocks the current in
the reverse direction.

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Term of anode and cathode in diode

 The diode is comprised of an

”Anode-positive” side and the
”Cathode-negative” side.
 Conventional current flow i
from negative to positive.

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Formation of the Depletion Region.

◂ At the instant of the PN junction formation free

electrons near the junction diffuse across the
junction into the P region and combine with holes.

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◂ Filling a hole makes a negative ion and leaves behind a
positive ion on the N side.
◂ These two layers of positive and negative charges form
the depletion region, as the region near the junction is
depleted of charge carriers.
◂ As electrons diffuse across the junction a point is
reached where the negative charge repels any further
diffusion of electrons.
◂ The depletion region now acts as a barrier.

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Barrier Potential.

 The electric field formed in the depletion region acts as a

barrier.
 External energy must be applied to get the electrons to
move across the barrier of the electric field.
 The potential difference required to move the electrons
through the electric field is called the barrier potential.
 Barrier potential of a PN junction depends on the type of
semiconductor material, amount of doping and temperature.
 This is approximately 0.7V for silicon and 0.3V for
germanium.

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Bias

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The possible “biasing” conditions for the standard
Junction Diode and these are:

 Forward Bias – The voltage potential is connected positive,

(+ve) to the P-type material and negative, (-ve) to the N-type
material across the diode which has the effect of Decreasing
the PN junction diodes width.
 Reverse Bias – The voltage potential is connected negative, (-
ve) to the P-type material and positive, (+ve) to the N-type
material across the diode which has the effect of Increasing
the PN junction diode’s width.

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CHARACTERISTIC FORWARD BIAS

The external voltage which is applied across the

PN-diode for reducing the potential barrier to
constitutes the easy flow of current through it is
called forward bias.

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Connection The positive terminal of the battery is
connected to the P-type semiconductor of the
device and the negative terminal is connected
to N-type semiconductor
Barrier Potential Reduces
Voltage The voltage of an anode is greater than
cathode.
Forward Current Large
Depletion layer Thin
Resistance Low
Current Flow Allows
Magnitude of Depends on forward voltage.
Current
Operate Conductor
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“

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CHARACTERISTIC
REVERSE BIAS
The external voltage which is
applied to the PN junction for
strengthening the potential
barrier and prevents the flow of
current through it is called
reverse bias.

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Connection The negative terminal of the battery is
connected to the P-region and the positive
terminal of the battery is connected to N-type
semiconductor.
Barrier Potential Strengthen
Voltage The voltage of cathode is greater than an
anode.
Forward Current Small
Depletion layer Thick
Resistance High
Current Flow Prevents
Magnitude of Zero
Current
Operate Insulator
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The V-I characteristics of diode can be divided
into two parts :

 Forward Characteristic
 Reverse Characteristic

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 Forward characteristic

 No current flows until the barrier voltage (0.3v for

Germanium and 0.7v for Silicon) is overcome.
 Then the curves has a linear rise and the current
increases, with the increase in voltage like ordinary
conductor.
 Above 0.3v or 0.7v, the majority carriers passing the
junction gain sufficient energy to knock out the valence
electrons and raise them to the conduction band
 Therefore, the forward current increases sharply
Reverse Characteristic
 Potential barriers increase, junction resistance increase
and prevents current flow.
 However, the minority carriers are accelerated by the
reverses voltage resulting a very small current (Reverse
current) in order of micro amperes.
 When reverse voltage is increase beyond a value, called
breakdown voltage, the reverse current increases
sharply and the diode shows almost zero resistance. It is
known as avalanche breakdown.
 Reverse voltage above 25v destroys the junction
permanently.
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Place your screenshot here

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 Applications

 As a rectifiers to convert AC into DC

 As an switch in computer circuit
 As detectors in radios to detect audio signals
 As LED to emit difference colours

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How diode as a rectifiers to convert AC into DC ?

• HALF-WAVE RECTIFIER

• FULL-WAVE RECTIFIER

• BRIDGE RECTIFIER

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HALF-WAVE RECTIFIER

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FULL-WAVE RECTIFIER

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BRIDGE RECTIFIER

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How diode as rectifier working ?

The diodes are connected to the two outer taps, and the
center tap is used as a common ground for the rectified
DC voltage. The full-wave rectifier converts both halves of
the AC sine wave to positive-voltage direct current. The
result is DC voltage that pulses at twice the frequency of
the input AC voltage.

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Conclusion
• As a conclusion, we can describe the basic
construction and characteristic of PN Junction.
• We are able to discus forward and reverse bias
of diode characteristic.
• We can explain the voltage-current
characteristic of diode.
• We had learned some diode application.
THANK YOU

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