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Circuit Design
Chapter 5
Parameter extraction
kT kT
(Cox Cb )
QITH nCox
q q
Cox Cb are the oxide and depletion capacitances per unit area
I D I F I R I S i f ir
QI
qI Normalized inversion
t
nCox charge density
Drift Diffusion
7
Classical and current-based threshold definitions
Difference in VT
Inversion
Physical Meaning Surface potential relative to the
charge density
classical definition
2F V n 1 Cox
Surface concentration
of electrons= bulk t 0
concentration of
holes
Drift component =
Diffusion component
t n
of drain current
n
2F V t ln nCox t 1 n ln
n 1 n 1
What’s the difference with the EKV approach?
if=3 at pinch-off
VG VT 0
VP
n
VP[V]
10
Specific current and threshold voltage
gm 2 VDS 1 i f 1
1 i f 1 ir ln
I D nt 1 i f 1 ir t 1 ir 1
gm gm 1 t ID t
IS ID
ID ID max
1 i f 2VDS 1 i f 1
i f 3
2VDS
For VDS/t=1/2 and if=3, we have ISID. For VDS/t=1/2 and if=3, more accurate values for
gm/ID and IS are 0.53 times the peak value of gm/ID and 1.13 times the measured current,
respectively .
gm dI D d ln I D
I D I D dVG dVG
CMOS Analog Design Using All-Region MOSFET Modeling 12
.
gm/ID VT-extraction procedure
gm 1 dI D g ms g md 2
I D I D dVG nI D nt 1 i f 1 ir
gm 1
ID VDS 0
nt 1 i f
g ch 1 dI D 2
ID I D dVS t 1 i f 1 ir
g ch 1
ID VDS 0
t 1 i f
Extracted VT values vs. channel length for gm/ID, gch/ID and constant
current methods for NMOS transistors with channel length ranging
from 100nm to 10μm and W=120nm, in a 90nm CMOS technology.
Application 2
VP VS / t 1 i f 2 ln 1 i f 1
For if=3, the pinch-off voltage is equal to the source voltage.
CMOS Analog Design Using All-Region MOSFET Modeling 19
Slope factor n=1/(dVP/dVG) vs. gate voltage
n 1 /(2 2F VP )
1 4VP 8F
2 2
( n 1) 2
The slope and the y-intercept of the interpolation line give =0.60 V1/2 and
2F=0.89 V
CMOS Analog Design Using All-Region MOSFET Modeling 21
Mobility - 1
The dependence of the mobility on the transverse electric field is written as
0
QB QI
1
s
Problem: Determine the mobility variation for cases in which the depletion charge
is much higher than the inversion charge density
0
with Cox / s
1 VP 2F
n 1
t2 W / 2 L
I S Cox VG
+
VS VS+t/2
1 VP 2F
t2 W / 2 L
0Cox
Experiment and ACM model for a long-channel (L=3.2 m) NMOS transistor in a 0.35
m CMOS technology, with VS=0 and VDS= 13 mV. The maximum error for currents is
around 30% for VG = 3.3 V
CMOS Analog Design Using All-Region MOSFET Modeling 24
Comparison between experiment and the
ACM model in a 0.35 m technology-2
Plot of the experimental and modeled current vs. gate voltage for a
minimum-length NMOS transistor in a 0.35 m technology.
VT VT 0 VSB VDB 1
1 I D L 1 I YD
D
VACLM I D L VD I D L VD
n
F V
ID 2
VADIBL t 1 1 VACLM 2aL( L bi DB SL )
2 IS 2a a
Derivatives of the experimental drain and source currents with respect to the drain
voltage versus drain-to-source voltage for a minimum channel length NMOS
transistor (L=0.4 m) in a 0.35 m CMOS technology.
CMOS Analog Design Using All-Region MOSFET Modeling 29
The Early voltage -4
33