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Gap, g
• Resistance of Electrode:
g Area, A
R =r
A
r is the resistivity of the
electrolyte fluid (Ohm∙m)
Example: ECM through a plate
• Applications:
– Molds and dies for injection molding and forging
– Machining of hard or exotic metals
– Sheetmetal stamping dies.
3b) Wire EDM
• Material is vaporized in a
very localized area
EBM Applications
CHM Process:
• Cleaning - to insure uniform etching
• Masking - a maskant (resist, chemically resistant to etchant)
is applied to portions of work surface not to be etched
• Patterning of maskant
• Etching - part is immersed in etchant which chemically
attacks those portions of work surface that are not masked
• Demasking - maskant is removed
Maskant - Photographic Resist Method
• Masking materials contain photosensitive chemicals
• Maskant is applied to work surface (dip coated, spin
coated, or roller coated) and exposed to light through a
negative image of areas to be etched
– These areas are then removed using photographic
developing techniques
– Remaining areas are vulnerable to etching
• Applications:
– Small parts on thin stock produced in high quantities
– Integrated circuits and printed circuit cards
Material Removal Rate in CHM
• Generally indicated as penetration rates, i.e. mm/min.
• Penetration rate unaffected by exposed surface area
• Etching occurs downward and under the maskant
d
• In general, , Etch Factor: Fe=
u
(see Table 26.2 pg 637)
Chemical Blanking
• Uses CHM to cut very thin
sheetmetal parts - down to
0.025 mm thick and/or for
intricate cutting patterns