EE-215

Lecture
Electronic Devices & Circuits
Text Book: Chapter 05 (SEDRA/SMITH 6th Ed)
MOS Field-Effect Transistors (MOSFETs)

Instructor: Shakeel Alvi

Class: BEE 5C/D
Electrical Engineering Department
Third lecture on MOSFET
 MOSFET Operation 1
We can express the magnitude
of charge in the channel by

Q Cox (WL)vOV

Where Cox is oxide capacitanc e per

unit gate area, and WL is gate area.

The oxide capacitanc e is given by

Cox
ox
tox

where ox 3.9 o
and tox is thickness of oxide.
 MOSFET Operation 2
IMPORTANT FACTS

When vDS 0

the voltage at every point

on channel is zero
the voltage across the
oxide is uniform vGS
 MOSFET Operation 3

When vGS Vt then vOV 0

negligble current iD flows
even if vDS is increased

When vGS Vt then vOV ve ,

current iD flows when vDS is present,
and iD increases with increase in vDS .
 Operation with Small 1
When vDS is small(abou t 50 mV),
the voltage b/w gate and various
points along the channel is constant
and equal to vGS

Since vOV determines the charge in

the channel, therefore
Q Cox (WL)vOV

Charge per unit channel length is

Q
Cox (W )vOV
L
vDS
Note that vDS establishe s an electric field across the channel E
L
 Operation with Small 2
v
The electric field E DS
L
across the channel, causes electron
drift with a
vDS
Drift velocity n E n
L
The current iD is obtained by
multiplyin g Charge / unit length
by drift velocity

v W
iD CoxW v OV n DS iD ( n Cox ) v OV vDS
L L
 Operation with Small 3

W
iD ( n Cox ) v OV vDS
L
For small vDS the channel
behaves as a linear resistor
whose value is controlled
by vOV

Thus conductanc e of channel is

W Recall for BJT

g DS ( n Cox ) v OV
L
 Operation with Small 4
W
g DS ( n Cox ) v OV
L
n Cox kn' is defined as
the Process Transcondu ctance
Parameter

W
is aspect ratio
L
Lmin is technolog y dependent

'
L

kn kn W is defined as
MOSFET Transcondu ctance parameter
 Operation with Small 5
W
g DS ( n Cox ) v OV
L

rDS 1
g DS

1
rDS
W
( n Cox ) v OV
L

1
OR rDS
W
( n Cox ) (v GS Vt )
L
Operation with Small

The channel conductance increases with increase of vGS

Re-building concept
Current flows in MOSFET by which mechanism

Recall from Chapter 2 that charge flow in

semiconductors occurs by diffusion or drift.

How about the transport mechanism in a

MOSFET?

Since the voltage source tied to the drain

creates an electric field along the channel, the
current results from the drift of charge.
Effect of Channel Width
When VDS is small
 Operations with increased 1
W
iD ( n Cox ) v OV vDS
L

vGS is kept constant at a value

greater than Vt
With increase of vDS the induced
channel acquires a tapered shape
Channel resistance increases with
increase of vDS
 Operations with increased 2

Width of the
channel at the
source end is
proportional to VOV

At the drain end the

channel width is
proportional to (VOV
- vDS)
 Operations with increased 3
W
Recall iD ( n Cox ) v OV vDS
L

For the tapered channel

W 1
iD ( n Cox ) (v OV vDS ) vDS
L 2

W 1 2
iD k n' OV DS
( v v vDS )
L 2

W 1 2
iD k '
n (v GS Vt )vDS vDS
L 2
Operations with increased 4
Operations with
Channel pinch-off

For vDS > VOV there is no

effect on the channel
shape and the current
remains constant
The drain current
saturates
 Operations with
' W 1 2
Re call : iD kn (v OV vDS vDS )
L 2

when vDS vOV

' W 2 1 2
iD k n (VOV VOV )
L 2

1 W 2
iD kn' vOV
2
L

1 ' W 2

OR iD kn vGS Vt
2 L
Operations with
MOSFET
Example form text book
Circuit Symbol