Power MOSFETs

Two Types
Depletion Type
Channel region is already diffused between the Drain and Source
Deplete, or pinch-off the Channel
Enhancement Type
No channel region exists between the Drain and Source
Invert the region between the Drain and Source to induce a
channel

POWER ELECTRONICS 1
N-Channel Depletion MOSFET

Normally Reverse-Bias the Gate-Source Junction

POWER ELECTRONICS 2
 N-Channel Enhancement MOSFET

The Gate-Source Junction will be Forward-Biased

The bias voltage must be greater than a threshold voltage
A Channel region is induced between the Drain and Source
POWER ELECTRONICS 3
N-Channel DMOS Powe MOSFET

POWER ELECTRONICS 4
Transfer and Output Characteristics

POWER ELECTRONICS 5
Switching Characteristics

POWER ELECTRONICS 6
Switching Waveforms and Times

POWER ELECTRONICS 7
 Turn-on Delay, td(on) = time to charge the input
capacitance to VT
Rise time, tr = Charging time to charge the input capacitance
to the full gate voltage, VGSP in order to drive the transistor
into the linear region of operation

POWER ELECTRONICS 8
 Turn-off delay time, td(off) = time for the input capacitance to
discharge from overdrive voltage V1 to pinch-off.
VGS must decrease significantly for VDS to rise.
Fall time, tf = time for the input capacitance to discharge from
pinch-off to the threshold voltage.

POWER ELECTRONICS 9
 MOSFET vs BJT
Parameter MOSFET BJT

Switching Loss Low High

Conduction Loss High Low

Controllability Voltage Control Current Control

Temperature Coefficient Positive Negative

Rating Upto 500 V, 140 A Upto 1200 V, 800 A

POWER ELECTRONICS 10
Insulated Gate Bipolar Transistor

POWER ELECTRONICS 11
Equivalent Model

POWER ELECTRONICS 12
Transfer & Output Characteristics

POWER ELECTRONICS 13
Switching Characteristics

POWER ELECTRONICS 14